{"title":"Photodoping-modified charge density wave phase transition in WS2/1T-TaS2 heterostructure","authors":"Rui Wang, Jianwei Ding, Fei Sun, Jimin Zhao, Xiaohui Qiu","doi":"10.1088/0256-307x/41/5/057801","DOIUrl":null,"url":null,"abstract":"\n Controlling collective electronic states holds great promise for the development of innovative devices. Here, we experimentally detect the modification of the charge density wave (CDW) phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW (CCDW) phase, which results in a significant decrease in both the phase transition temperature (T\n c) and phase transition stiffness (PTS). We interpret that photo-induced hole doping, when surpassing a critical threshold value of ~1018/cm3, sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"1 4","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1088/0256-307x/41/5/057801","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Controlling collective electronic states holds great promise for the development of innovative devices. Here, we experimentally detect the modification of the charge density wave (CDW) phase transition within a 1T-TaS2 layer in a WS2/1T-TaS2 heterostructure using time-resolved ultrafast spectroscopy. Laser-induced charge transfer doping strongly suppresses the commensurate CDW (CCDW) phase, which results in a significant decrease in both the phase transition temperature (T
c) and phase transition stiffness (PTS). We interpret that photo-induced hole doping, when surpassing a critical threshold value of ~1018/cm3, sharply decreases the phase transition energy barrier. Our results provide new insights into controlling the CDW phase transition, paving the way for optical-controlled novel devices based on CDW materials.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
Indexed/Abstracted：
Web of Science SCIE
Scopus
CAS
INSPEC
Portico
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
