Short-Term Oxidation of HfB2-SiC Based UHTC in Supersonic Flow of Carbon Dioxide Plasma

Plasma Pub Date : 2024-04-19 DOI:10.3390/plasma7020017
A. Chaplygin, E. Simonenko, M. Kotov, Vladimir I. Sakharov, I. Lukomskii, Semen S. Galkin, A. F. Kolesnikov, A. Lysenkov, I. A. Nagornov, A. S. Mokrushin, N. Simonenko, N. T. Kuznetsov, M. Yakimov, A. Shemyakin, N. Solovyov
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Abstract

The short-term (5 min) exposure to the supersonic flow of carbon dioxide plasma on ultrahigh-temperature ceramics of HfB2-30vol.%SiC composition has been studied. It was shown that, when established on the surface at a temperature of 1615–1655 °C, the beginning of the formation of an oxidized layer takes place. Raman spectroscopy and scanning electron microscopy studies showed that the formation of a porous SiC-depleted region is not possible under the HfO2-SiO2 surface oxide layer. Numerical modeling based on the Navier–Stokes equations and experimental probe measurements of the test conditions were performed. The desirability of continuing systematic studies on the behavior of ultrahigh-temperature ZrB2/HfB2-SiC ceramics, including those doped with various components under the influence of high-enthalpy gas flows, was noted.
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基于 HfB2-SiC 的 UHTC 在二氧化碳等离子体超音速流中的短期氧化作用
对 HfB2-30vol.%SiC 超高温陶瓷在超音速二氧化碳等离子体流中的短期(5 分钟)暴露进行了研究。结果表明,当表面温度达到 1615-1655 ℃ 时,氧化层开始形成。拉曼光谱和扫描电子显微镜研究表明,在 HfO2-SiO2 表面氧化层下不可能形成多孔的碳化硅贫化区。研究人员根据纳维-斯托克斯方程建立了数值模型,并对测试条件进行了实验探针测量。指出了继续系统研究超高温 ZrB2/HfB2-SiC 陶瓷(包括在高焓气流影响下掺杂各种成分的陶瓷)行为的可取性。
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2.30
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