{"title":"Quantifying Flat-Band Voltage in Si Metal-Oxide-Semiconductor Structures: An Evaluation via Terahertz Emission Spectroscopy (TES)","authors":"Dongxun Yang, M. Tonouchi","doi":"10.1142/s0129156424400184","DOIUrl":null,"url":null,"abstract":"Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model.","PeriodicalId":35778,"journal":{"name":"International Journal of High Speed Electronics and Systems","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Journal of High Speed Electronics and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1142/s0129156424400184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"Engineering","Score":null,"Total":0}
引用次数: 0
Abstract
Laser-induced Terahertz (THz) Emission Spectroscopy (TES) has demonstrated its potential utility in the realm of Metal-Oxide-Semiconductor (MOS) devices as an expedient and noncontact estimation methodology. Owing to its discerning response to the interface electric field, the amplitude of the THz emission peak in time-domain spectroscopy encapsulates rich information regarding MOS properties, notably the flat-band voltage. This paper concentrates on the precise quantitative estimation of the flat-band voltage within the Si MOS structure, elucidating the intricacies of the estimation process through the THz emission model.
激光诱导太赫兹（THz）发射光谱（TES）作为一种便捷的非接触式估算方法，已在金属氧化物半导体（MOS）器件领域展现出其潜在的实用性。由于太赫兹发射峰的振幅对界面电场有明显的响应，时域光谱中的太赫兹发射峰包含了有关 MOS 特性的丰富信息，尤其是平带电压。本文主要研究如何精确定量估计硅 MOS 结构中的平带电压，通过太赫兹发射模型阐明估计过程的复杂性。
期刊介绍：
Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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