Lingling Gao, J. Lai, Dong Chen, Cuiying Pei, Qi Wang, Yi Zhao, Changhua Li, W. Cao, Juefei Wu, Yulin Chen, Xingqiu Chen, Yan Sun, C. Felser, Yanpeng Qi
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引用次数: 0
Abstract
Recently, the giant intrinsic anomalous Hall effect (AHE) has been observed in the materials with kagome lattice. In this study, we systematically investigate the influence of high pressure on the AHE in the ferromagnet LiMn6Sn6 with clean Mn kagome lattice. Our in-situ high-pressure Raman spectroscopy indicates that the crystal structure of LiMn6Sn6 maintains a hexagonal phase under high pressures up to 8.51 GPa. The anomalous Hall conductivity (AHC) σxy
A remains around 150 Ω-1 cm-1, dominated by the intrinsic mechanism. Combined with theoretical calculations, our results indicate that the stable AHE under pressure in LiMn6Sn6 originates from the robust electronic and magnetic structure.
期刊介绍：
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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