Laser writing of memristive logic gates and crossbar arrays

Abstract

Memristor-based logic circuits are gaining a lot of attention due to the potential for high logic density hardware and novel in-memory computing applications. Readily available methods for fabricating of memristor logic structures that are suitable for integration with conventional computer hardware are a growing need. This work presents a direct laser writing process capable of rapidly fabricating memristor logic circuits by laser irradiation of metal salt precursor solutions. Planar memristor patterns are fabricated, and their I–V response is characterized. Boolean logic gates are fabricated from planar memristor pairs that exhibit low programming voltages and rapid switching. Cu/Cu2O/Cu and Ag/Cu2O/Cu memristors are also fabricated in crossbar arrays, showing the ability to be programmed to multiple resistance states through ultrashort voltage pulses. The devices also show the potential to have high endurance and nonvolatile resistance state retention.