Efficient 32-nm CNTFET-Based 1-Bit Adder: A Fast and Energy-Optimized Design

V. R. Tirumalasetty, K. Babulu, G. A. Naidu
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Abstract

CNTFETs are a shows potential choice for traditional CMOS technology due to their potential for lesser power consumption and superior performance. In the present paper, a new 1-bit hybrid full adder has been deliberated and proposed using both pass transistor (PT) and transmission gate logics (TGL), which utilizes a total of 16 transistors. The combination of PT and TGL can lead to improved power efficiency, reduced delay, and enhanced circuit performance in various VLSI applications. For 0.9 V supply voltage at 32-nm CNTFET technology, the power consumption is 0.0748 μW, which is to be an exceptionally low value with a lesser delay of 7.586 Ps and the power-delay-product (PDP) of 0.5674 aJ. The results obtained from this analysis demonstrate the power efficiency, speed, and overall performance of the proposed full adder design. The combination of 32-nm CNTFET technology, deliberate circuit design choices, and the use of specific logic elements (CMOS inverters and strong transmission gates) contributes to the reported characteristics. Using a 0.9 V supply voltage and 32-nm Stanford CNTFET Model technology, the suggested 1-bit adder circuit's concert was investigated using the Mentor Graphics Tool. Finally, using the proposed 1-bit full adder circuit, an N-bit ripple carry adder (N=8, 16 & 32) is implemented and demonstrated. The Simulation results of the 8-bit RCA with a power consumption of 0.373 μW, the delay is 16.852 Ps and the PDP is 6.2857 aJ. These results show that proposed RCA’s have better performance compared to the already reported designs in terms of performance, speed, and power economy.
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基于 CNTFET 的高效 32 纳米 1 位加法器:快速且能量优化的设计
CNTFET 具有功耗低、性能优越的特点,是传统 CMOS 技术的潜在选择。本文讨论并提出了一种新型 1 位混合全加法器,它同时使用了通路晶体管 (PT) 和传输门逻辑 (TGL),总共使用了 16 个晶体管。在各种超大规模集成电路应用中,PT 和 TGL 的结合可提高能效、减少延迟并增强电路性能。在 32 纳米 CNTFET 技术条件下,电源电压为 0.9 V 时,功耗为 0.0748 μW,这是一个非常低的值,延迟为 7.586 Ps,功率-延迟-积(PDP)为 0.5674 aJ。这一分析结果证明了所提出的全加法器设计的能效、速度和整体性能。32 纳米 CNTFET 技术、深思熟虑的电路设计选择以及特定逻辑元件(CMOS 反相器和强传输门电路)的使用共同促成了报告中的特性。利用 0.9 V 电源电压和 32 纳米斯坦福 CNTFET 模型技术,使用 Mentor Graphics 工具对建议的 1 位加法器电路的音乐会进行了研究。最后,利用建议的 1 位全加法器电路,实现并演示了 N 位纹波进位加法器(N=8、16 和 32)。8 位 RCA 的仿真结果显示,功耗为 0.373 μW,延迟为 16.852 Ps,PDP 为 6.2857 aJ。这些结果表明,与已报道的设计相比,拟议的 RCA 在性能、速度和功耗经济性方面都有更好的表现。
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