C. Zhang, B. Pilsl, S. Powell, E. Vilella, S. Zhang, T. Bergauer, R. Casanova, C. Irmler, U. Kraemer, R. Marco-Hernandez, J. Mazorra de Cos, P. Sieberer, J. Sonneveld, H. Steininger
{"title":"RD50-MPW: a series of monolithic High Voltage CMOS pixel chips with high granularity and towards high radiation tolerance","authors":"C. Zhang, B. Pilsl, S. Powell, E. Vilella, S. Zhang, T. Bergauer, R. Casanova, C. Irmler, U. Kraemer, R. Marco-Hernandez, J. Mazorra de Cos, P. Sieberer, J. Sonneveld, H. Steininger","doi":"10.1088/1748-0221/19/04/c04059","DOIUrl":null,"url":null,"abstract":"\n A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV-CMOS sensors, especially in terms of pixel granularity, timing resolution and radiation tolerance. The evaluation of one of this series, RD50-MPW3, is presented in this contribution, including laboratory and test beam measurements. The design of the latest prototype, RD50-MPW4, which resolves issues found in RD50-MPW3 and implements further improvements, is described.\n","PeriodicalId":507814,"journal":{"name":"Journal of Instrumentation","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2024-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Instrumentation","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1748-0221/19/04/c04059","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A series of monolithic High Voltage CMOS (HV-CMOS) pixel sensor prototypes have been developed by the CERN-RD50 CMOS working group for potential use in future high luminosity experiments. The aim is to further improve the performance of HV-CMOS sensors, especially in terms of pixel granularity, timing resolution and radiation tolerance. The evaluation of one of this series, RD50-MPW3, is presented in this contribution, including laboratory and test beam measurements. The design of the latest prototype, RD50-MPW4, which resolves issues found in RD50-MPW3 and implements further improvements, is described.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
