Features of the melt–solution synthesis of the TbCr3(BO3)4 single crystals

IF 1.7 4区材料科学 Q3 CRYSTALLOGRAPHY Journal of Crystal Growth Pub Date : 2024-04-18 DOI:10.1016/j.jcrysgro.2024.127716

I.A. Gudim, N.V. Mikhashenok, A.D. Vasiliev, S.V. Melnikova, M.S. Pavlovskii, S.A. Skorobogatov, A.I. Pankrats

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Abstract

The phase formation of terbium chromoborate TbCr₃(BO₃)₄ in the bismuth trimolybdate and lithium tungstate melt–solutions has been studied. The absence of the terbium chromoborate trigonal phase in the bismuth trimolybdate-based system at all component ratios has been shown. The component ratio in the lithium tungstate-based system has been found at which the TbCr₃(BO₃)₄ trigonal crystals are formed at temperatures above 1100 °C; below this temperature, the monoclinic phase dominates. The structural and magnetic properties of the grown crystals have been studied. It has been established that the trigonal and monoclinic TbCr₃(BO₃)₄ crystals synthesized from the lithium tungstate-based solvent exhibit identical magnetic properties. At the same time, a significant difference of the magnetic properties of the single crystals synthesized from the bismuth molybdate melt–solution has been observed. This difference has been attributed to the effect of Bi³⁺ ions that partially replace Tb³⁺ ions.

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熔融溶液合成 TbCr3(BO3)4 单晶的特点

研究了铬硼酸铽 TbCr3(BO3)4 在三钼酸铋和钨酸锂熔融溶液中的相形成。结果表明，在以三钼酸铋为基础的体系中，在所有成分比率下都不存在三方铬硼酸铽相。在基于钨酸锂的体系中，已经找到了在温度高于 1100 °C 时形成 TbCr3(BO3)4 三方晶体的组分比率；在此温度以下，单斜相占据主导地位。我们对生长出的晶体的结构和磁性能进行了研究。结果表明，用钨酸锂溶剂合成的三方和单斜 TbCr3(BO3)4 晶体具有相同的磁性能。同时，从钼酸铋熔融溶液中合成的单晶体的磁性能也有显著差异。这种差异归因于部分取代 Tb3+ 离子的 Bi3+ 离子的影响。

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来源期刊

Journal of Crystal Growth 化学-晶体学

CiteScore

3.60

自引率

11.10%

发文量

373

审稿时长

65 days

期刊介绍： The journal offers a common reference and publication source for workers engaged in research on the experimental and theoretical aspects of crystal growth and its applications, e.g. in devices. Experimental and theoretical contributions are published in the following fields: theory of nucleation and growth, molecular kinetics and transport phenomena, crystallization in viscous media such as polymers and glasses; crystal growth of metals, minerals, semiconductors, superconductors, magnetics, inorganic, organic and biological substances in bulk or as thin films; molecular beam epitaxy, chemical vapor deposition, growth of III-V and II-VI and other semiconductors; characterization of single crystals by physical and chemical methods; apparatus, instrumentation and techniques for crystal growth, and purification methods; multilayer heterostructures and their characterisation with an emphasis on crystal growth and epitaxial aspects of electronic materials. A special feature of the journal is the periodic inclusion of proceedings of symposia and conferences on relevant aspects of crystal growth.