Mathematical improvisation of electrical equivalent circuit model for commercial dye-sensitized solar module with Gauss–Seidel, curve fit and theoretical approach

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-05-02 DOI:10.1007/s10825-024-02159-4
Biswajit Mandal, Partha Sarathee Bhowmik
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Abstract

This paper presents two equivalent electrical circuit models of a dye-sensitized solar (DSS) module (150B-3 390). The module, which uses a third-generation solar cell, has several advantages over the earlier two generations. The equivalent model increases the research opportunities on solar cell technology development even without an existing solar plant. The paper highlights the development of an equivalent model of the module with the proposed method, as no such model is currently available to carry out further research with the module. The single-diode model (SDM) is a widely utilized simple approach that describes solar cell behavior very well. Model I in the paper is developed using only the SDM approach. It consists of a few unknown parameters estimated with the Gauss–Seidel method. The results from Model I show that the model requires certain improvements, due to the fundamental differences in the characteristic curves between conventional solar cells and DSS cells. The proposed model can more precisely describe the behavior of the module. Gauss–Seidel, curve fitting, and theoretical methods were used to develop the proposed model. It describes the irradiance effect of the module by introducing two newly developed parameters to Model I. The proposed model, with the theoretically modified characteristic equation of Model I, illustrates the temperature effect. The experimental work for the modeling is carried out on the DSS module inside a laboratory environment with standard test conditions. A Raspberry Pi 4 B with sensing devices is used to extract the measurable parameters from the module. Both models are based on an SDM design approach. Characteristic curves of the module from measured data validate the output characteristics of both models at various irradiance and temperature values. The results confirm the superiority of the proposed model over Model I.

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用高斯-赛德尔法、曲线拟合法和理论法改进商用染料敏化太阳能电池组件的等效电路数学模型
本文介绍了染料敏化太阳能(DSS)模块(150B-3 390)的两个等效电路模型。该模块采用第三代太阳能电池,与前两代相比具有多项优势。即使没有现有的太阳能发电厂,等效模型也能增加太阳能电池技术开发的研究机会。本文重点介绍了利用所提议的方法开发该模块等效模型的情况,因为目前还没有此类模型可用于对该模块进行进一步研究。单二极管模型(SDM)是一种广泛使用的简单方法,能很好地描述太阳能电池的行为。本文中的模型 I 仅使用 SDM 方法开发。它由几个用高斯-赛德尔法估算的未知参数组成。模型 I 的结果表明,由于传统太阳能电池和 DSS 电池的特性曲线存在本质区别,因此需要对模型进行一定的改进。建议的模型可以更精确地描述模块的行为。高斯-赛德尔法、曲线拟合法和理论法被用于建立拟议模型。通过在模型 I 中引入两个新开发的参数,该模型描述了模块的辐照度效应。建模的实验工作是在标准测试条件下的实验室环境中对 DSS 模块进行的。使用带有传感设备的 Raspberry Pi 4 B 从模块中提取可测量参数。两个模型都基于 SDM 设计方法。通过测量数据得出的模块特性曲线验证了两种模型在不同辐照度和温度值下的输出特性。结果证实了拟议模型优于模型 I。
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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