{"title":"Electron Distribution Near the Fast-Ion Track in Silicon","authors":"N. V. Novikov, N. G. Chechenin, A. A. Shirokova","doi":"10.1134/S1027451024020150","DOIUrl":null,"url":null,"abstract":"<p>In this paper, we propose a model to describe the distribution of electrons near the track of a fast ion. The dependence of the fast-electron flux on time, layer depth, and radial variable is modeled taking into account the statistical weight of each trajectory. The pulse duration in the electron-flux distribution was found to be fractions of ps while the radial size of the cylindrical region, where the transport of fast electrons occurs, reaches tens of angstroms.</p>","PeriodicalId":671,"journal":{"name":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","volume":"18 2","pages":"255 - 263"},"PeriodicalIF":0.5000,"publicationDate":"2024-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques","FirstCategoryId":"1085","ListUrlMain":"https://link.springer.com/article/10.1134/S1027451024020150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we propose a model to describe the distribution of electrons near the track of a fast ion. The dependence of the fast-electron flux on time, layer depth, and radial variable is modeled taking into account the statistical weight of each trajectory. The pulse duration in the electron-flux distribution was found to be fractions of ps while the radial size of the cylindrical region, where the transport of fast electrons occurs, reaches tens of angstroms.
期刊介绍：
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.
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