Effect of Electron Bombardment on the Composition and Structure of CaF2/Si(111) Films

IF 0.5 Q4 PHYSICS, CONDENSED MATTER Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Pub Date : 2024-05-07 DOI:10.1134/S1027451024020228

A. A. Abduvayitov, D. A. Tashmukhamedova, B. E. Umirzakov, A. T. Mamadalimov

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Abstract

Using the methods of Auger electron spectroscopy, scanning electron microscopy, and measuring the angular dependences of the coefficient of inelastically reflected electrons, changes in the morphology, composition, and structure of CaF₂ surface layers under electron bombardment with an energy of E_e = 1–8 keV are studied. The composition of the CaF₂ surface changes noticeably at E_e = 2–3 keV and an electron dose of D ≥ 10¹⁸ cm^–2. It is found that at a dose of less than 10¹⁸ cm^–2, electrons are incident on separate sections of the CaF₂ film. As D increases, the sizes of these sections increase, and starting from D = 8 × 10¹⁸ cm^–2, the boundaries of neighboring sections overlap. The surface is completely covered with Ca atoms. After annealing at 900 K, a single-crystal Ca film is formed. At E_e = 3 keV, the thickness of the Ca film is ~25–30 Å.

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电子轰击对 CaF2/Si(111)薄膜成分和结构的影响

摘要利用欧杰电子能谱、扫描电子显微镜和测量非弹性反射电子系数的角度相关性等方法，研究了在能量为 Ee = 1-8 keV 的电子轰击下 CaF2 表层的形态、组成和结构的变化。在 Ee = 2-3 keV 和电子剂量 D ≥ 1018 cm-2 时，CaF2 表面的组成发生了明显变化。研究发现，当电子剂量小于 1018 cm-2 时，电子分别入射到 CaF2 薄膜的不同部分。随着 D 的增大，这些部分的尺寸也随之增大，从 D = 8 × 1018 cm-2 开始，相邻部分的边界开始重叠。表面完全被钙原子覆盖。在 900 K 退火后，形成了单晶 Ca 膜。在 Ee = 3 keV 时，钙膜的厚度约为 25-30 Å。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques PHYSICS, CONDENSED MATTER-

CiteScore

0.90

自引率

25.00%

发文量

144

审稿时长

3-8 weeks

期刊介绍： Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques publishes original articles on the topical problems of solid-state physics, materials science, experimental techniques, condensed media, nanostructures, surfaces of thin films, and phase boundaries: geometric and energetical structures of surfaces, the methods of computer simulations; physical and chemical properties and their changes upon radiation and other treatments; the methods of studies of films and surface layers of crystals (XRD, XPS, synchrotron radiation, neutron and electron diffraction, electron microscopic, scanning tunneling microscopic, atomic force microscopic studies, and other methods that provide data on the surfaces and thin films). Articles related to the methods and technics of structure studies are the focus of the journal. The journal accepts manuscripts of regular articles and reviews in English or Russian language from authors of all countries. All manuscripts are peer-reviewed.