A. V. Osipov, Sh. Sh. Sharofidinov, A. V. Kremleva, E. V. Osipova, A. M. Smirnov, S. A. Kukushkin
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引用次数: 0
Abstract
The three main crystalline modifications of Ga2O3, namely α-phase, ε-phase, and β-phase were grown on sapphire substrates using the hydride vapour phase epitaxy (HVPE) method. The temperatures of the substrates and the values of the precursor fluxes required to obtain each phase exclusively were determined. It was observed that the metastable ε-phase easily transforms into a stable β-phase during annealing. However, the metastable α-phase undergoes an intermediate amorphous phase during annealing, leading to flaking and collapse. This behavior arises from the excessively large increase in density (~10%) during the transformation from α-phase to β-phase, which results in significant elastic stresses and an increase in the height of the phase transition barrier.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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