S. I. Stepanov, A. I. Pechnikov, M. P. Scheglov, A. V. Chikiryaka, V. I. Nikolaev
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引用次数: 0
Abstract
High crystalline quality epitaxial films of orthorhombic gallium oxide ε(κ)-Ga2O3 with a thickness of more 20 μm have been grown for the first time using halide vapor phase epitaxy. Sapphire wafers with preliminarily deposited GaN layers were used as substrates. The properties of the produced films are studied by X-ray diffraction and electron microscopy. The results are considered an important step towards obtaining thick layers and quasi-bulk ε(κ)-Ga2O3 crystals for practical applications in electronics and sensor technology.
摘要 利用卤化物气相外延技术首次生长出厚度超过 20 μm 的正交氧化镓ε(κ)-Ga2O3 高结晶质量外延薄膜。基片使用了初步沉积了 GaN 层的蓝宝石晶片。通过 X 射线衍射和电子显微镜研究了所制备薄膜的特性。这些结果被认为是获得厚层和准大体积ε(κ)-Ga2O3晶体的重要一步，可用于电子和传感器技术的实际应用。
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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