V. I. Nikolaev, A. V. Almaev, B. O. Kushnarev, A. I. Pechnikov, S. I. Stepanov, A. V. Chikiryaka, R. B. Timashov, M. P. Scheglov, P. N. Butenko, E. V. Chernikov
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引用次数: 0
Abstract
The effect of the gaseous medium composition on the electrically conductive properties of In2O3–Ga2O3 films obtained by halide vapor phase epitaxy has been studied. In the temperature range of 100–550°C, the In2O3–Ga2O3 films exhibit high sensitivity to H2, NH3 and possess hyphen performance and low base resistance. A qualitative mechanism for the sensitivity of In2O3–Ga2O3 films to gases is proposed.
期刊介绍：
Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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