Electrical engineering of topological magnetism in two-dimensional heterobilayers

Nihad Abuawwad, Manuel dos Santos Dias, Hazem Abusara, Samir Lounis
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Abstract

The emergence of topological magnetism in two-dimensional (2D) van der Waals (vdW) magnetic materials and their heterostructures is an essential ingredient for next-generation information technology devices. Here, we demonstrate the all-electric switching of the topological nature of individual magnetic objects emerging in 2D vdW heterobilayers. We show from the first principles that an external electric field modifies the vdW gap between CrTe2 and (Rh, Ti)Te2 layers and alters the underlying magnetic interactions. This enables switching between ferromagnetic skyrmions and meron pairs in the CrTe2/RhTe2 heterobilayer while it enhances the stability of frustrated antiferromagnetic merons in the CrTe2/TiTe2 heterobilayer. We envision that the electrical engineering of distinct topological magnetic solitons in a single device could pave the way for novel energy-efficient mechanisms to store and transmit information with applications in spintronics.

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二维异质薄膜中拓扑磁性的电气工程
在二维范德华(vdW)磁性材料及其异质结构中出现拓扑磁性是下一代信息技术设备的基本要素。在这里,我们展示了二维范德华异质层中出现的单个磁性物体拓扑性质的全电切换。我们从第一原理证明,外部电场会改变 CrTe2 和 (Rh, Ti)Te2 层之间的 vdW 间隙,并改变底层的磁相互作用。这使得 CrTe2/RhTe2 异质层中的铁磁天线和梅龙子对能够相互转换,同时增强了 CrTe2/TiTe2 异质层中受挫反铁磁梅龙子的稳定性。我们设想,在单个器件中实现不同拓扑磁孤子的电气工程,可以为自旋电子学中应用的新型高能效信息存储和传输机制铺平道路。
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