Tianyu Yu , Yunlei Jiang , Suxia Liang , Zhiguo Zhao , Sheng Zou , Jie Su , Renjie Hua , Cang Liang , Wangfan Chen , Mi Zhang , Wenjun Zhang , Lei Shi , Yuan Dong
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引用次数: 0
Abstract
Tungsten doped indium oxide (In2O3: W, IWO) thin films have been attracting increasing attention due to their excellent optoelectronic properties. Here, a series of IWO thin films were prepared using direct current (DC) magnetron sputtering method, by varying the sputtering pressure. Analysis revealed that the IWO films prepared under sputtering pressure of 0.4 Pa exhibited excellent optoelectronic performance, with low square resistance, resistivity, high carrier concentration and mobility. The resulting semi-transparent perovskite solar cells (ST-PSCs), with IWO fabricated under 0.4 Pa, yield a PCE of 15.71 % for the large area modules of 100 cm2 (active area 64.8 cm2).
期刊介绍：
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.
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