Pub Date : 2024-11-28DOI: 10.1016/j.cap.2024.11.016
Sang Han Ko , Seung-Eon Moon , Sung Min Yoon
Synergistic effects of Al2O3 capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO2 thin films were investigated. The use of an Al2O3 capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO2 thin films, leading to a net remnant polarization (2Pr) of >20 μC/cm2 when deposited <260 °C. The HfO2 thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10−6 A/cm2 at an electric field of 2 MV/cm, accompanied by a high 2Pr and an endurance of >107 cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO2 thin films by means of the Al2O3 capping process.
{"title":"Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films","authors":"Sang Han Ko , Seung-Eon Moon , Sung Min Yoon","doi":"10.1016/j.cap.2024.11.016","DOIUrl":"10.1016/j.cap.2024.11.016","url":null,"abstract":"<div><div>Synergistic effects of Al<sub>2</sub>O<sub>3</sub> capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO<sub>2</sub> thin films were investigated. The use of an Al<sub>2</sub>O<sub>3</sub> capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO<sub>2</sub> thin films, leading to a net remnant polarization (2P<sub>r</sub>) of >20 μC/cm<sup>2</sup> when deposited <260 °C. The HfO<sub>2</sub> thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10<sup>−6</sup> A/cm<sup>2</sup> at an electric field of 2 MV/cm, accompanied by a high 2P<sub>r</sub> and an endurance of >10<sup>7</sup> cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO<sub>2</sub> thin films by means of the Al<sub>2</sub>O<sub>3</sub> capping process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 1-8"},"PeriodicalIF":2.4,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747740","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-26DOI: 10.1016/j.cap.2024.11.015
Yen Hsueh Wu , Hong Hyuk Kim , Jae Cheol Shin
InAs exhibits high electron mobility, positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductor-metal ohmic contacts. In this study, surface treatments involving sulfur and (NH4)2S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm2/V·s to 292.718 cm2/V·s through the application of passivation and RTA processes.
{"title":"Improved mobility in InAs nanowire FETs with sulfur-based surface treatment","authors":"Yen Hsueh Wu , Hong Hyuk Kim , Jae Cheol Shin","doi":"10.1016/j.cap.2024.11.015","DOIUrl":"10.1016/j.cap.2024.11.015","url":null,"abstract":"<div><div>InAs exhibits high electron mobility, positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductor-metal ohmic contacts. In this study, surface treatments involving sulfur and (NH<sub>4</sub>)<sub>2</sub>S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm<sup>2</sup>/V·s to 292.718 cm<sup>2</sup>/V·s through the application of passivation and RTA processes.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 81-86"},"PeriodicalIF":2.4,"publicationDate":"2024-11-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142747435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-23DOI: 10.1016/j.cap.2024.11.014
Dong Hee Shin , Hosun Lee
Recently, there has been interest in developing high-performance self-driven photodetectors (PDs) using 2D-based heterostructures due to their unique optoelectronic properties. Here, we demonstrate that vertical-heterostructures based on graphene (Gr) transparent conductive electrodes, n-type 2D WS2, and p-type LaVO3 realize a broadband-responsive PD covering the wavelength range of 300–850 nm. Due to the formation of an electric field at the WS2/LaVO3 interface and the photovoltaic effect, this structure shows a rectifying operation with a maximum detectivity of 2.1 × 1010 Jones at zero bias. Additionally, it exhibits a fast fall time of 435 μs and a 3 dB bandwidth of 2300 Hz, making it suitable for high-speed self-powered optoelectronic applications. Therefore, the TETA-Gr/WS2/LaVO3 heterojunction is proposed as an excellent candidate for high-performance, self-powered, and broadband PDs.
{"title":"Graphene/WS2/LaVO3 heterojunction for self-powered, high-speed, and broadband photodetectors","authors":"Dong Hee Shin , Hosun Lee","doi":"10.1016/j.cap.2024.11.014","DOIUrl":"10.1016/j.cap.2024.11.014","url":null,"abstract":"<div><div>Recently, there has been interest in developing high-performance self-driven photodetectors (PDs) using 2D-based heterostructures due to their unique optoelectronic properties. Here, we demonstrate that vertical-heterostructures based on graphene (Gr) transparent conductive electrodes, n-type 2D WS<sub>2</sub>, and p-type LaVO<sub>3</sub> realize a broadband-responsive PD covering the wavelength range of 300–850 nm. Due to the formation of an electric field at the WS<sub>2</sub>/LaVO<sub>3</sub> interface and the photovoltaic effect, this structure shows a rectifying operation with a maximum detectivity of 2.1 × 10<sup>10</sup> Jones at zero bias. Additionally, it exhibits a fast fall time of 435 μs and a 3 dB bandwidth of 2300 Hz, making it suitable for high-speed self-powered optoelectronic applications. Therefore, the TETA-Gr/WS<sub>2</sub>/LaVO<sub>3</sub> heterojunction is proposed as an excellent candidate for high-performance, self-powered, and broadband PDs.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 69-75"},"PeriodicalIF":2.4,"publicationDate":"2024-11-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720527","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1016/j.cap.2024.11.013
Takmo Jeong , Jiyoon Kim , Un Jeong Kim , Hyunjin Ji , Seok Joon Yun
As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short-channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS2), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS2 under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS2 monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces p-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.
当硅基半导体技术缩小到纳米尺度时，它遇到了很大的物理限制，包括电子迁移率降低、短沟道效应和发热量增加，这些都阻碍了器件的性能和可靠性。二维（2D）半导体，如二硫化钼（MoS2），在纳米尺度上具有卓越的电学特性，具有巨大的潜力，但在高度集成电路中产生过多热量的问题依然存在。因此，研究 MoS2 在各种加热条件下的热耐久性及其对物理性质和器件性能的影响至关重要。在本研究中，我们通过在不同温度下烘烤 CVD 生长的 MoS2 单层，系统地研究了它们的氧化行为和相关物理性质变化。研究清楚地表明，高温烘烤会诱导 p 掺杂和结构变形，显著改变光学和电学特性。尽管器件性能下降，但观察到界面库仑散射减少，这表明器件稳定性有可能提高。这项研究强调了了解热稳定性对于加速开发用于下一代电子器件的二维半导体的重要性。
{"title":"Oxidation effects on the optical and electrical properties of MoS2 under controlled baking temperatures","authors":"Takmo Jeong , Jiyoon Kim , Un Jeong Kim , Hyunjin Ji , Seok Joon Yun","doi":"10.1016/j.cap.2024.11.013","DOIUrl":"10.1016/j.cap.2024.11.013","url":null,"abstract":"<div><div>As silicon-based semiconductor technology scales down to the nanoscale, it encounters significant physical limitations, including reduced electron mobility, short-channel effects, and increased heat generation, which hinder device performance and reliability. Two-dimensional (2D) semiconductors, such as molybdenum disulfide (MoS<sub>2</sub>), offer great potential with superior electrical properties at the nanoscale, but the issue of excessive heat generation in highly integrated circuits persists. Therefore, it is essential to investigate the thermal durability of MoS<sub>2</sub> under various heating conditions and its impact on physical properties and device performance. In this study, we systematically investigated the oxidation behavior and related physical property variations of CVD-grown MoS<sub>2</sub> monolayers by baking them at different temperatures. It was clearly revealed that high-temperature baking induces <em>p</em>-doping and structural deformation, significantly altering optical and electrical properties. Despite the degradation in device performance, reduced interfacial Coulomb scattering was observed, suggesting potential for improved device stability. This study underscores the importance of understanding thermal stability to accelerate the development of 2D semiconductors for next-generation electronic devices.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 61-68"},"PeriodicalIF":2.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142697807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-22DOI: 10.1016/j.cap.2024.11.012
Sanjith Unithrattil , Taewon Min , Gopinathan Anoop , Jun Young Lee , Tae Yeon kim , Shibnath Samanta , Yubo Qi , Jiahao Zhang , Seung Hyun Hwang , Hyeon Jun Lee , Kun Guo , Su Yong Lee , Yasuhiko Imai , Osami Sakata , Keisuke Shimizu , Kei Shigematsu , Hajime Hojo , Kui Yao , Masaki Azuma , Jaekwang Lee , Ji Young Jo
Understanding the ultra-fast dynamics of ferroelectric materials is essential for advancing the development of next-generation high speed electronic and photonic devices. Here, the ultrafast piezoelectric response of cobalt-substituted BiFeO3 (BiFe1-xCoxO3) with x = 0.15, consisting of morphotropic phase boundary of monoclinic MC and MA –type phases is investigated. The real-time piezoelectric response in (001)-oriented BiFe0.85Co0.15O3 (BFCO) epitaxial thin film was monitored using the time-resolved X-ray microdiffraction technique under an applied electric field with pulse widths 70 ns and 100 ns. The BFCO thin film yielded a high piezoelectric strain of approximately 0.53 % along [001] direction, with a giant c/a ratio (∼1.26) at an electric field of 1.3 MV/cm and a pulse width of 100 ns, with a piezoelectric coefficient () of 40 pm/V. This finding is an important step towards the development of a high performance lead-free piezoelectric material for ultrafast operations in advanced technological applications.
{"title":"Nanosecond electric pulse-induced ultrafast piezoelectric responses in Co3+ substituted BiFeO3 epitaxial thin films","authors":"Sanjith Unithrattil , Taewon Min , Gopinathan Anoop , Jun Young Lee , Tae Yeon kim , Shibnath Samanta , Yubo Qi , Jiahao Zhang , Seung Hyun Hwang , Hyeon Jun Lee , Kun Guo , Su Yong Lee , Yasuhiko Imai , Osami Sakata , Keisuke Shimizu , Kei Shigematsu , Hajime Hojo , Kui Yao , Masaki Azuma , Jaekwang Lee , Ji Young Jo","doi":"10.1016/j.cap.2024.11.012","DOIUrl":"10.1016/j.cap.2024.11.012","url":null,"abstract":"<div><div>Understanding the ultra-fast dynamics of ferroelectric materials is essential for advancing the development of next-generation high speed electronic and photonic devices. Here, the ultrafast piezoelectric response of cobalt-substituted BiFeO<sub>3</sub> (BiFe<sub>1-<em>x</em></sub>Co<sub><em>x</em></sub>O<sub>3</sub>) with <em>x</em> = 0.15, consisting of morphotropic phase boundary of monoclinic M<sub>C</sub> and M<sub>A</sub> –type phases is investigated. The real-time piezoelectric response in (001)-oriented BiFe<sub>0.85</sub>Co<sub>0.15</sub>O<sub>3</sub> (BFCO) epitaxial thin film was monitored using the time-resolved X-ray microdiffraction technique under an applied electric field with pulse widths 70 ns and 100 ns. The BFCO thin film yielded a high piezoelectric strain of approximately 0.53 % along [001] direction, with a giant <em>c</em>/<em>a</em> ratio (∼1.26) at an electric field of 1.3 MV/cm and a pulse width of 100 ns, with a piezoelectric coefficient (<span><math><mrow><msub><mi>d</mi><mn>33</mn></msub></mrow></math></span>) of 40 pm/V. This finding is an important step towards the development of a high performance lead-free piezoelectric material for ultrafast operations in advanced technological applications.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 76-80"},"PeriodicalIF":2.4,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142720528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-20DOI: 10.1016/j.cap.2024.11.011
Asif Ullah, Thanh-Huong Thi Nguyen, Sanghoon Kim
The field of spin caloritronics, which explores the interplay between spin current and thermal effects, is a promising path for new energy-efficient-electronic devices. However, current thermoelectric technologies are limited by conventional material choices and device designs. Antiferromagnetic materials, with their unique spin structure and magnetic characteristics, provide new opportunities for enhanced thermoelectric performance through spin-dependent effects. This review covers origin and measurement methodologies of anomalous Nernst effect, focusing on non-collinear antiferromagnets. By presenting insights into the relationship between electronic structure and thermoelectric performance as well as their practical measurements, this review aims to pave the way for developing AFM-based thermoelectric devices in advanced energy technologies.
{"title":"Observation of anomalous Nernst effect in non-collinear antiferromagnets","authors":"Asif Ullah, Thanh-Huong Thi Nguyen, Sanghoon Kim","doi":"10.1016/j.cap.2024.11.011","DOIUrl":"10.1016/j.cap.2024.11.011","url":null,"abstract":"<div><div>The field of spin caloritronics, which explores the interplay between spin current and thermal effects, is a promising path for new energy-efficient-electronic devices. However, current thermoelectric technologies are limited by conventional material choices and device designs. Antiferromagnetic materials, with their unique spin structure and magnetic characteristics, provide new opportunities for enhanced thermoelectric performance through spin-dependent effects. This review covers origin and measurement methodologies of anomalous Nernst effect, focusing on non-collinear antiferromagnets. By presenting insights into the relationship between electronic structure and thermoelectric performance as well as their practical measurements, this review aims to pave the way for developing AFM-based thermoelectric devices in advanced energy technologies.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 51-60"},"PeriodicalIF":2.4,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142698501","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-19DOI: 10.1016/j.cap.2024.11.010
Yu Chen, Guihong Song, Zhihao Ben, Yusheng Wu, Junhua You
The β-Cu2+xSe/CuInSe2 multilayer films with different modulation period were prepared and studied. The results showed that the deposited films possessed obvious layered structure. The room temperature carrier concentration, mobility, electrical conductivity and thermal conductivity decreased, but the Seebeck coefficient and power factor and relative thermoelectric figure of merit increased with reducing modulation period of deposited β-Cu2-xSe/CuInSe2 multilayer films. The linear reduction of carrier concentration and mobility and the decrease in thermal conductivity with modulation period was attributed to the scattering of carriers and phonons by layer interface and grain boundary, respectively. The sample with the smallest modulation period (160 nm) possessed the highest power factor of ∼0.74 at room temperature and ∼1.56 mW m−1 K−2 at 405 °C. The insertion of heterogeneous layer into films is an effective method to increase Seebeck coefficient and decrease thermal conductivity, thus increasing thermoelectric figure of merit of films.
{"title":"Improved thermoelectric properties of the β-Cu2+xSe/CuInSe2 multilayer films by layer interface scattering","authors":"Yu Chen, Guihong Song, Zhihao Ben, Yusheng Wu, Junhua You","doi":"10.1016/j.cap.2024.11.010","DOIUrl":"10.1016/j.cap.2024.11.010","url":null,"abstract":"<div><div>The β-Cu<sub>2+x</sub>Se/CuInSe<sub>2</sub> multilayer films with different modulation period were prepared and studied. The results showed that the deposited films possessed obvious layered structure. The room temperature carrier concentration, mobility, electrical conductivity and thermal conductivity decreased, but the Seebeck coefficient and power factor and relative thermoelectric figure of merit increased with reducing modulation period of deposited β-Cu<sub>2-x</sub>Se/CuInSe<sub>2</sub> multilayer films. The linear reduction of carrier concentration and mobility and the decrease in thermal conductivity with modulation period was attributed to the scattering of carriers and phonons by layer interface and grain boundary, respectively. The sample with the smallest modulation period (160 nm) possessed the highest power factor of ∼0.74 at room temperature and ∼1.56 mW m<sup>−1</sup> K<sup>−2</sup> at 405 °C. The insertion of heterogeneous layer into films is an effective method to increase Seebeck coefficient and decrease thermal conductivity, thus increasing thermoelectric figure of merit of films.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 1-10"},"PeriodicalIF":2.4,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142698494","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-19DOI: 10.1016/j.cap.2024.11.004
Ye-Ryoung Lee
Optical techniques are essential in biomedical research, enabling high-resolution, non-invasive imaging of biological tissues. However, imaging depth in optical microscopy is limited by multiple scattering in scattering media, such as biological tissues. Various methods have been developed to overcome this limitation, and numerical simulations have played an important role in developing new imaging techniques. Traditional simulations often use simple random matrices to represent multiple-scattered waves, which overly simplifies their behavior and may impact the accuracy of image quality assessments. In this study, we introduce various types of simulated multiple scattering matrices to better capture the characteristics of scattered waves. We systematically analyze the correlation properties of these matrices and evaluate their impact on high-resolution imaging quality. This work provides a foundation for selecting appropriate matrix types for simulating multiple scattering effects, aiding in the effective testing and validation of new microscopy techniques in scattering media.
{"title":"Impact analysis of various types of simulated multiple scattering matrices on the numerical simulation of high-resolution imaging in scattering media","authors":"Ye-Ryoung Lee","doi":"10.1016/j.cap.2024.11.004","DOIUrl":"10.1016/j.cap.2024.11.004","url":null,"abstract":"<div><div>Optical techniques are essential in biomedical research, enabling high-resolution, non-invasive imaging of biological tissues. However, imaging depth in optical microscopy is limited by multiple scattering in scattering media, such as biological tissues. Various methods have been developed to overcome this limitation, and numerical simulations have played an important role in developing new imaging techniques. Traditional simulations often use simple random matrices to represent multiple-scattered waves, which overly simplifies their behavior and may impact the accuracy of image quality assessments. In this study, we introduce various types of simulated multiple scattering matrices to better capture the characteristics of scattered waves. We systematically analyze the correlation properties of these matrices and evaluate their impact on high-resolution imaging quality. This work provides a foundation for selecting appropriate matrix types for simulating multiple scattering effects, aiding in the effective testing and validation of new microscopy techniques in scattering media.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 21-26"},"PeriodicalIF":2.4,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142697805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-16DOI: 10.1016/j.cap.2024.11.002
Jiho Kim , Boknam Chae , Sangsul Lee
This article introduces several cases of s-SNOM (Scattering-type scanning near-field optical microscopy) based on a SPM (Scanning probe microscopy) for chemical thin film. A highly concentrated near-field infrared performs the chemical analysis of s-SNOM at the sharp apex of the metal-coated atomic microscope tip. This attractive technique, which provides both surface morphology and chemical information of the material simultaneously, various studies have been published, including surface polariton propagation, Moire superlattice, and ballistic valley transport. Further, s-SNOM successfully visualized the formation of lamellar nanostructures of BCP and the latent image of photoresist formed by EUV (extreme ultraviolet). These results were cross-validated through traditional GIWAXS (Grazing-incidence wide-angle X-ray scattering) and FTIR (Fourier transform infrared) analysis. s-SNOM is a useful tool for providing new insights into material analysis by visualizing nanoscale chemical information of local regions that conventional measurements could not confirm.
{"title":"Near-field infrared spectroscopy: Advanced research method in thin film analysis","authors":"Jiho Kim , Boknam Chae , Sangsul Lee","doi":"10.1016/j.cap.2024.11.002","DOIUrl":"10.1016/j.cap.2024.11.002","url":null,"abstract":"<div><div>This article introduces several cases of s-SNOM (Scattering-type scanning near-field optical microscopy) based on a SPM (Scanning probe microscopy) for chemical thin film. A highly concentrated near-field infrared performs the chemical analysis of s-SNOM at the sharp apex of the metal-coated atomic microscope tip. This attractive technique, which provides both surface morphology and chemical information of the material simultaneously, various studies have been published, including surface polariton propagation, Moire superlattice, and ballistic valley transport. Further, s-SNOM successfully visualized the formation of lamellar nanostructures of BCP and the latent image of photoresist formed by EUV (extreme ultraviolet). These results were cross-validated through traditional GIWAXS (Grazing-incidence wide-angle X-ray scattering) and FTIR (Fourier transform infrared) analysis. s-SNOM is a useful tool for providing new insights into material analysis by visualizing nanoscale chemical information of local regions that conventional measurements could not confirm.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"70 ","pages":"Pages 41-50"},"PeriodicalIF":2.4,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142698500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-15DOI: 10.1016/j.cap.2024.11.003
Hwiwon Seo , Haneul Lee , Ji-Won Kwon , Gwanjoong Kim , Ingyu Lee , Gon-Ho Kim
This study investigates the electron thermal properties in Argon and Ar/O2 inductively coupled plasmas using global model based on Langmuir probe data. The sensor-data driven global model (GM) is improved to simulate the power coupling efficiency and an electron energy distribution simultaneously. It reveals that the heating characteristic changes the thermal state and radical generation with input power, pressure and gas mixture ratio. The analysis results of probe data from the global model provide information on the plasma thermal characteristics under efficient operating conditions of process plasma. It provides the advantage of offering insights into the causes of variations in the plasma thermal equilibrium state with operating conditions in ICP, which are limited to obtain from the sensor or the general GM. This makes it highly promising as a simulation method for developing process recipes.
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