{"title":"Generation of single photon emitters at a SiO2/SiC interface by high-temperature oxidation and reoxidation at lower temperatures","authors":"Kentaro Onishi, Takato Nakanuma, Kosuke Tahara, Katsuhiro Kutsuki, Takayoshi Shimura, Heiji Watanabe, Takuma Kobayashi","doi":"10.35848/1882-0786/ad4449","DOIUrl":null,"url":null,"abstract":"We report on an approach to produce single photon emitters at the SiO<sub>2</sub>/SiC interface. We form a high-quality SiO<sub>2</sub>/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO<sub>2</sub>/SiC interface.","PeriodicalId":8093,"journal":{"name":"Applied Physics Express","volume":"30 1","pages":""},"PeriodicalIF":2.3000,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Applied Physics Express","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.35848/1882-0786/ad4449","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, APPLIED","Score":null,"Total":0}
引用次数: 0
Abstract
We report on an approach to produce single photon emitters at the SiO2/SiC interface. We form a high-quality SiO2/SiC interface by high-temperature oxidation and subsequently perform oxidation at lower temperatures (200 °C–1000 °C) to generate the emitters. After reoxidation at 800 °C, we confirmed the formation of emitters with a bright luminescence (>50 kcps). Through Hambury-Brown and Twiss measurements, single photon characteristics were confirmed. Thus, the proposed approach is effective in generating highly bright single photon emitters at the SiO2/SiC interface.
期刊介绍：
Applied Physics Express (APEX) is a letters journal devoted solely to rapid dissemination of up-to-date and concise reports on new findings in applied physics. The motto of APEX is high scientific quality and prompt publication. APEX is a sister journal of the Japanese Journal of Applied Physics (JJAP) and is published by IOP Publishing Ltd on behalf of the Japan Society of Applied Physics (JSAP).
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