Absorption coefficient of a DMS ellipsoid quantum dot with Rashba spin–orbit interaction

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-05-11 DOI:10.1007/s10825-024-02174-5

A. M. Babanlı, M. Balcı, M. Ovezov, G. Orazov, V. Sabyrov

引用次数: 0

Abstract

We study the absorption coefficient of a diluted magnetic semiconductor ellipsoidal quantum dot with Rashba spin–orbit coupling. The Schrödinger equation for a one-electron ellipsoidal quantum dot was solved within the framework of the effective mass approximation method. The wave vector and electron energy found during the solution were used to find an expression for the absorption coefficient. The article examines intraband optical transitions relative to changes in external parameters. The decrease in the absorption coefficient as a function of the energy of the incident photon was studied at different values of the magnetic field, the Rashba parameter, temperature, concentration of Mn atoms and the radius of the ellipsoid. According to the results obtained, these parameters significantly affect intraband optical transitions.

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具有拉什巴自旋轨道相互作用的 DMS 椭圆形量子点的吸收系数

我们研究了具有拉什巴自旋轨道耦合的稀释磁性半导体椭球量子点的吸收系数。我们在有效质量近似法的框架内求解了单电子椭球量子点的薛定谔方程。求解过程中发现的波矢量和电子能量被用来寻找吸收系数的表达式。文章研究了与外部参数变化相关的带内光学转变。研究了在不同的磁场值、拉什巴参数、温度、锰原子浓度和椭球半径条件下，吸收系数的减小与入射光子能量的函数关系。研究结果表明，这些参数对带内光学转变有显著影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.