Gallium Nitride Electrodeposition at Indium Tin Oxide and Fluorine Tin Oxide Electrodes in Ammonium Nitrate and Gallium Nitrate Aqueous Solution

Abstract

Gallium nitride thin films in semiconductor technology have garnered interest. This study aims to develop an effective GaN electrodeposition technique applicable where needed. To determine the optimal conditions, cyclic voltammetry (CV) was done on a boron-doped diamond electrode at 0.01 mV/s potential scan rate and at 0.8 V vs. Ag/AgCl (Saturated KCl) constant applied potential. In the CV study, a well-defined peak formed at -1.75 V vs. Ag/Ag/Cl (Saturated KCl). To start examining thin film features on Indium Tin Oxide (ITO) and Fluorine Tin Oxide (FTO) electrodes, chronoamperometry (CA) measurements were done at time scales ranging from 3600s to 14,000s and at a constant applied potential of -1.7 V vs. Ag/AgCl (Saturated KCl). The characterization methods used to examine the samples included SEM and EDS. The optimal weight electrodeposition percentages of Ga and N on ITO were 10.3% and 27.2% and 47.3% and 12.7% on FTO respectively.