(Invited) Preparation of N-Type and P-Type Doped Single Crystal Diamonds with Laser-Induced Doping and Microwave Plasma Chemical Vapor Deposition

Linhai Guo, Li Tian, Hui Wang, Lingxue Meng, Chujun Feng
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Abstract

In this study, n-type doped single-crystal diamonds were successfully prepared under normal temperature and pressure conditions using laser-induced doping. 248nm pulsed laser beams with nanosecond duration were irradiated on the single crystal diamond substrate immersing in an 85% phosphoric acid solution and it introduced phosphorus doping to form an n-type doped thin layer. The resistivity of the doped region significantly decreased compared to that of the single-crystal diamond. After depositing a titanium electrode, the resistivity of the doped film obtained by Van der Pauw Technique was determined to be 1.5×10-4 Ω·cm. Furthermore, p-type doped single-crystal diamonds were successfully prepared by introducing boron during the growth process using Microwave Plasma Chemical Vapor Deposition(MPCVD). It was demonstrated that the proposed technique can introduce impurities into single crystal diamonds to form doped conductive thin layers.
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(特邀)利用激光诱导掺杂和微波等离子体化学气相沉积制备 N 型和 P 型掺杂单晶金刚石
本研究利用激光诱导掺杂技术,在常温常压条件下成功制备了 n 型掺杂单晶金刚石。持续时间为纳秒的 248nm 脉冲激光束照射到浸泡在 85% 磷酸溶液中的单晶金刚石衬底上,引入磷掺杂,形成 n 型掺杂薄层。与单晶金刚石相比,掺杂区的电阻率明显降低。在沉积钛电极后,用范德保夫技术测定得到的掺杂薄膜的电阻率为 1.5×10-4 Ω-cm。此外,利用微波等离子体化学气相沉积(MPCVD)技术,在生长过程中引入硼,成功制备了p型掺杂单晶金刚石。实验证明,所提出的技术可以在单晶金刚石中引入杂质,从而形成掺杂导电薄层。
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