{"title":"Impact of Oxide Charges on The Minority Carrier Response in MOS(p) Devices With Al2O3/SiO2 Gate Stacks under Strong Inversion Condition","authors":"Chi-Yi Kao, Tai-Ming Kung, J. Hwu","doi":"10.1149/11302.0043ecst","DOIUrl":null,"url":null,"abstract":"In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.","PeriodicalId":11473,"journal":{"name":"ECS Transactions","volume":"41 39","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-05-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Transactions","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/11302.0043ecst","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract
In this study, a compact model proposed in the previous work (2) was utilized to elucidate an unusual minority carrier response time observed in MOS(p) devices with Al2O3/SiO2 gate stacks. It is supposed that the number of oxide charges increases with SiO2 thickness. The findings confirmed the heightened sensitivity of device alternating current (AC) characteristics to oxide charges in the outer region. Accordingly, we explored the dependencies of oxide thickness and quality on the transition frequency (ωm) of devices.
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