Electrodeposition of Ru on Nanoscale Trench Patterns

Youjung Kim, Jinhyun Lee, Jin-Kyo Seo, H. Han, Inseong Hwang, S. Yoon, Bongyoung Yoo
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Abstract

Ru deposition in advanced technology nodes can improve performance by providing low resistance in nanoscale features. In this study, we reported the electrochemical reactions of Ru3+ on an Ru surface using multi-cyclic voltammetry (CV) and behavior of additives during Ru electrodeposition using linear sweep voltammetry (LSV) and potentiostatic measurements. Disodium 3,3'-dithiobis(1-propanesulfonate) (SPS), polyvinylpyrrolidone (PVP), and a bromide ion (Br-) were added for bottom-up filling. We investigated the suppression behavior of PVP. The current density and the onset potential of suppressor breakdown were affected by the suppressor concentration. PVP interacted synergistically with Br- and showed additional suppression. PVP formed a suppressing layer with Br- after formation of a bromide layer. SPS could reduce roughness during electrodeposition of Ru. Based on these results, nano-trenches were filled with Ru using the optimized additive condition.
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在纳米级沟槽图案上电沉积 Ru
先进技术节点中的 Ru 沉积可在纳米级特征中提供低电阻,从而提高性能。在这项研究中,我们使用多循环伏安法(CV)报告了 Ru 表面上 Ru3+ 的电化学反应,并使用线性扫描伏安法(LSV)和恒电位测量法报告了 Ru 电沉积过程中添加剂的行为。我们添加了 3,3'-二硫双(1-丙烷磺酸钠)(SPS)、聚乙烯吡咯烷酮(PVP)和溴离子(Br-)进行自下而上的填充。我们研究了 PVP 的抑制行为。抑制剂击穿的电流密度和起始电位受抑制剂浓度的影响。PVP 与 Br- 起着协同作用,并显示出额外的抑制作用。在形成溴化层后,PVP 与 Br- 形成抑制层。SPS 可以降低电沉积 Ru 过程中的粗糙度。基于这些结果,使用优化的添加剂条件在纳米沟槽中填充了 Ru。
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