A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning

IF 2.4 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of the Electron Devices Society Pub Date : 2024-03-16 DOI:10.1109/JEDS.2024.3401852
Antonio J. García-Loureiro;Natalia Seoane;Julian G. Fernández;Enrique Comesaña
{"title":"A General Toolkit for Advanced Semiconductor Transistors: From Simulation to Machine Learning","authors":"Antonio J. García-Loureiro;Natalia Seoane;Julian G. Fernández;Enrique Comesaña","doi":"10.1109/JEDS.2024.3401852","DOIUrl":null,"url":null,"abstract":"This work presents an overview of a set of in-house-built software tools intended for state-of-the-art semiconductor device modelling, ranging from numerical simulators to post-processing tools and prediction codes based on statistics and machine learning techniques. First, VENDES is a 3D finite-element based quantum-corrected semi-classical/classical toolbox able to characterise the performance, scalability, and variability of transistors. MLFoMPy is a Python-based tool that post-processes IV characteristics, extracting the most relevant figures of merit and preparing the data for subsequent statistical or machine learning studies. FSM is a variability prediction tool that also pinpoints the most sensitive regions of a device to a specific source of fluctuation. Finally, we also describe machine learning-based prediction tools that were used to obtain full IV curves and specific figures of merit of devices suffering the influence of several sources of variability.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":"12 ","pages":"1057-1064"},"PeriodicalIF":2.4000,"publicationDate":"2024-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10531738","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10531738/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

This work presents an overview of a set of in-house-built software tools intended for state-of-the-art semiconductor device modelling, ranging from numerical simulators to post-processing tools and prediction codes based on statistics and machine learning techniques. First, VENDES is a 3D finite-element based quantum-corrected semi-classical/classical toolbox able to characterise the performance, scalability, and variability of transistors. MLFoMPy is a Python-based tool that post-processes IV characteristics, extracting the most relevant figures of merit and preparing the data for subsequent statistical or machine learning studies. FSM is a variability prediction tool that also pinpoints the most sensitive regions of a device to a specific source of fluctuation. Finally, we also describe machine learning-based prediction tools that were used to obtain full IV curves and specific figures of merit of devices suffering the influence of several sources of variability.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
先进半导体晶体管通用工具包:从模拟到机器学习
这项工作概述了一组用于最先进半导体器件建模的内部构建软件工具,范围从数值模拟器到后处理工具和基于统计和机器学习技术的预测代码。首先,VENDES是一个基于三维有限元的量子校正半经典/经典工具箱,能够表征晶体管的性能、可扩展性和可变性。MLFoMPy是一个基于python的工具,用于后处理IV特征,提取最相关的价值数字,并为后续统计或机器学习研究准备数据。FSM是一种可变性预测工具,它还可以精确地指出设备中对特定波动源最敏感的区域。最后,我们还描述了基于机器学习的预测工具,这些工具用于获得完整的IV曲线和受多种变异性影响的设备的具体性能数字。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Journal of the Electron Devices Society
IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology
CiteScore
5.20
自引率
4.30%
发文量
124
审稿时长
9 weeks
期刊介绍: The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.
期刊最新文献
Realization of Pure Boron/Si Diodes Through a Two-Step Low-Temperature Growth in a Home-Built LP CVD System Power Spectral Density of Thermal Noise at High Frequencies in Thermal Conductance for Semiconductor Devices Measurement and Analysis of Multistate Ferroelectric Transistors in 28 nm CMOS Process Continuum Modeling of High-Field Transport in Semiconductors Research on 4H-SiC Photoconductive Semiconductor Switch Employing Composite Anti-Reflection Coating
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1