{"title":"Tuning Electrical Properties and Achieving High TCR in P-Doped a-SixC1−x:H Films","authors":"D. F. Valencia-Grisales, C. Reyes-Betanzo","doi":"10.1007/s11664-024-11166-x","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, the characteristics of phosphorus-doped hydrogenated amorphous silicon carbide prepared by radio-frequency glow discharge decomposition of a mixture of silane (SiH<sub>4</sub>), methane (CH<sub>4</sub>) and hydrogen (H<sub>2</sub>) were investigated. Molecular vibration, surface morphology, dark electrical conductivity, and activation energy were analyzed. The gas phase composition of CH<sub>4</sub> was varied in the range of 0.40–0.95 relative to SiH<sub>4</sub>, while the molar fraction of phosphine (PH<sub>3</sub>) in the gas phase was adjusted from 2.75% to 10%. It was observed that the molar fraction of carbon (C) in the film affects its homogeneity, resulting in the formation of regions rich in silicon (Si) and amorphous silicon carbide (a-Si<sub><i>x</i></sub>C<sub>1−<i>x</i></sub>), as well as the formation of nc-Si clusters, leading to lower surface roughness. The variation in electrical properties concerning doping and the molar fraction of carbon is consistently explained in this study.</p></div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"53 7","pages":"3946 - 3955"},"PeriodicalIF":2.5000,"publicationDate":"2024-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-11166-x","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, the characteristics of phosphorus-doped hydrogenated amorphous silicon carbide prepared by radio-frequency glow discharge decomposition of a mixture of silane (SiH4), methane (CH4) and hydrogen (H2) were investigated. Molecular vibration, surface morphology, dark electrical conductivity, and activation energy were analyzed. The gas phase composition of CH4 was varied in the range of 0.40–0.95 relative to SiH4, while the molar fraction of phosphine (PH3) in the gas phase was adjusted from 2.75% to 10%. It was observed that the molar fraction of carbon (C) in the film affects its homogeneity, resulting in the formation of regions rich in silicon (Si) and amorphous silicon carbide (a-SixC1−x), as well as the formation of nc-Si clusters, leading to lower surface roughness. The variation in electrical properties concerning doping and the molar fraction of carbon is consistently explained in this study.
期刊介绍：
The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications.
Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field.
A journal of The Minerals, Metals & Materials Society.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
