A Bi2C Photodetector Based on the Spin-Dependent Photogalvanic Effect

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-05-23 DOI:10.1007/s11664-024-11155-0
Jian Lin, Guangyao Liang, Xi Fu, Wenhu Liao, Xiaowu Li, Haixia Gao
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Abstract

Nowadays there is considerable interest in the photogalvanic effect in low-dimensional devices. In this work, we built a two-dimensional Bi2C-based photodetector and explored the spin-dependent photogalvanic effect under linearly polarized light and zero-bias conditions which can produce experimentally observable photoelectron flow. It was discovered that by introducing vacancies and substitution-doping into the Bi2C photodetector, the photogalvanic effect could be enhanced by 10–100 times that of a pristine photodetector, which is sufficient to be detected in experiments. Moreover, due to strong spin–orbit interactions, the Bi2C photodetector can produce very high spin polarization, even 100% full spin polarization, and pure spin current at a specific incident angle and photon energy, for example in the Bi1-vacancy Bi2C photodetector. In addition, the photon energy of incident light can regulate the produced spin photocurrent, which shows considerable anisotropy. Our results highlight the potential of the Bi2C photodetector as a versatile device in optoelectronics and spintronics applications.

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基于自旋相关光电效应的 Bi2C 光电探测器
目前,人们对低维器件中的光电效应有相当大的兴趣。在这项工作中,我们建立了一个基于bi2c的二维光电探测器,并探索了在线偏振光和零偏条件下自旋依赖的光电效应,该效应可以产生实验观察到的光电子流。研究发现,通过在Bi2C光电探测器中引入空位和取代掺杂,光电效应可以比原始光电探测器增强10-100倍,足以在实验中检测到。此外,由于强自旋-轨道相互作用,Bi2C光电探测器可以产生非常高的自旋极化,甚至100%的全自旋极化,以及在特定入射角和光子能量下的纯自旋电流,例如bi1 -空位Bi2C光电探测器。此外,入射光的光子能量可以调节产生的自旋光电流,并表现出相当的各向异性。我们的研究结果突出了Bi2C光电探测器作为光电子和自旋电子学应用的多功能器件的潜力。图形抽象
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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