Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires
{"title":"Achieving a High-Responsivity and Fast-Response-Speed Solar-Blind Photodetector for Underwater Optical Communication via AlGaN/AlN/GaN Heterojunction Nanowires","authors":"Junjun Xue, Saisai Wang, Jiaming Tong, Guofeng Yang, Irina Parkhomenko, Fadei Komarov, Yu Liu, Qing Cai*, Jin Wang* and Ting Zhi*, ","doi":"10.1021/acsaelm.4c00636","DOIUrl":null,"url":null,"abstract":"<p >Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.</p>","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":null,"pages":null},"PeriodicalIF":4.3000,"publicationDate":"2024-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acsaelm.4c00636","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Realizing energy-efficient devices with sustainable and independent operation is a large challenge for next-generation photodetection systems in various environments. In this study, we present a high-response and fast-speed ultraviolet photodetector (UV PD) based on the p-AlGaN/AlN/n-GaN nanowires (NWs) heterojunction, which could operate at a 0 V bias for underwater photodetection through the photoelectrochemical (PEC) process. Compared to the UV PD without AlN insertion, the detection performance would be increased to 3–5 times for underwater solar-blind UV detection under the effect of heterostructure band engineering to prevent carrier drift and recombination at 0 V bias under 255 nm illumination. Furthermore, the photoresponsivity and response speed can be further improved by a surface modification strategy to adjust the carrier transport between the nitride semiconductor and electrolyte. These promising results lay a solid foundation for the development of III-nitride high-efficiency, self-powered PEC photosynthesis devices in the future.