Tailoring the Physiochemical Properties of Sn-Doped V2O5 Using SHI Irradiation

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-05-21 DOI:10.1007/s11664-024-11127-4

Ashish K. Kumawat, Kriti Kumari, Satyapal S. Rathore, Indra Sulania, Rashi Nathawat

{"title":"Tailoring the Physiochemical Properties of Sn-Doped V2O5 Using SHI Irradiation","authors":"Ashish K. Kumawat, Kriti Kumari, Satyapal S. Rathore, Indra Sulania, Rashi Nathawat","doi":"10.1007/s11664-024-11127-4","DOIUrl":null,"url":null,"abstract":"<div>When subjected to swift heavy ion (SHI) irradiation, a lattice acquires sufficient energy to induce desirable flaws in the material. In this study, the physiochemical properties of Sn-doped V2O5 (SVO) synthesized by a sol–gel process were thoroughly examined following irradiation with Ni+11 ions at 150 MeV energy and fluence of 2.51 × 1011 ions/cm2. The successful doping of Sn in V2O5 was confirmed by an increase in tensile strain, as revealed by the x-ray diffraction (XRD) spectrum, and the presence of characteristic peaks of constituent elements detected in the energy-dispersive x-ray (EDX) spectrum. Atomic force microscopy (AFM) and field-emission scanning microscopy (FESEM) images revealed an increase in surface roughness and transformation to an amorphous state, respectively. The Tauc plot indicated an increase in the electronic bandgap post-irradiation. Fourier transform infrared (FTIR) spectroscopy analysis revealed a peak shift in the fingerprint region indicating a change in the vibrational energy of the involved molecular bonds. These findings highlight the potential of SHI irradiation for the tuning of material properties, paving the way for a wide range of functional applications of the material.</div>","PeriodicalId":626,"journal":{"name":"Journal of Electronic Materials","volume":"53 9","pages":"5083 - 5091"},"PeriodicalIF":2.5000,"publicationDate":"2024-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Electronic Materials","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11664-024-11127-4","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

Abstract

When subjected to swift heavy ion (SHI) irradiation, a lattice acquires sufficient energy to induce desirable flaws in the material. In this study, the physiochemical properties of Sn-doped V₂O₅ (SVO) synthesized by a sol–gel process were thoroughly examined following irradiation with Ni⁺¹¹ ions at 150 MeV energy and fluence of 2.51 × 10¹¹ ions/cm². The successful doping of Sn in V₂O₅ was confirmed by an increase in tensile strain, as revealed by the x-ray diffraction (XRD) spectrum, and the presence of characteristic peaks of constituent elements detected in the energy-dispersive x-ray (EDX) spectrum. Atomic force microscopy (AFM) and field-emission scanning microscopy (FESEM) images revealed an increase in surface roughness and transformation to an amorphous state, respectively. The Tauc plot indicated an increase in the electronic bandgap post-irradiation. Fourier transform infrared (FTIR) spectroscopy analysis revealed a peak shift in the fingerprint region indicating a change in the vibrational energy of the involved molecular bonds. These findings highlight the potential of SHI irradiation for the tuning of material properties, paving the way for a wide range of functional applications of the material.

Abstract Image

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

利用 SHI 辐照调整掺锡 V2O5 的物理化学特性

当受到快速重离子（SHI）辐照时，晶格获得足够的能量在材料中诱导所需的缺陷。本研究采用溶胶-凝胶法制备了含sn掺杂的V2O5 (SVO)，在能量为150 MeV、影响为2.51 × 1011个离子/cm2的Ni+11离子辐照下，对其理化性质进行了全面研究。x射线衍射（XRD）和能量色散x射线（EDX）光谱显示，V2O5中Sn的成功掺杂得到了证实。原子力显微镜（AFM）和场发射扫描显微镜（FESEM）图像分别显示表面粗糙度增加和转变为非晶态。Tauc图显示辐照后电子带隙增大。傅里叶红外光谱分析显示指纹区出现了峰移，表明所涉及的分子键的振动能量发生了变化。这些发现突出了SHI辐照在调整材料性能方面的潜力，为材料的广泛功能应用铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.