Modification of the Properties of CdSe Nanowires by Argon Ion Implantation

Abstract

Cadmium selenide (CdSe) represents a direct-bandgap semiconductor belonging to the II–VI group, operating within the visible range of the electromagnetic spectrum. Nanowires composed of CdSe hold significant potential for various optoelectronic applications. Employing ion implantation is an immensely appealing technique, which allows for a controlled introduction of dopants into any lattice, and it is based on well-established principles. In this context, the current investigation focuses on the impact of argon ion implantation on cadmium selenide nanowires with a diameter of 80 nm. The nanowires were synthesized via a template-assisted electrodeposition method using polycarbonate membranes with 80 nm pores and 10 µm thickness. A three-electrode setup facilitated their fabrication. Subsequently, argon ions with a 4+ charge state and an energy of 1 MeV were implanted into the synthesized nanowires at varying fluence levels, ranging from 10¹¹ to 10¹³ ions/cm². The ion implantation process was conducted in the radiation chamber of the Inter-University Accelerator Centre’s low-energy ion implantation facility in New Delhi, India. Stopping and Range of Ions in Matter (SRIM) code simulations were employed to determine the optimal implantation parameters. Compositional analysis confirmed the successful incorporation of argon ions into the CdSe lattice. Notably, scanning electron microscopy revealed no alterations in the nanowire morphology despite the implantation. X-ray diffraction analysis showed no shift in the 2θ position of diffraction peaks, but indicated variations in their intensities. Furthermore, the implanted nanowires exhibited an increased absorbance and improved conductivity with increasing ion fluence. These findings demonstrate the effectiveness of argon ion implantation in modifying the optical and electrical properties of 80 nm diameter CdSe nanowires.