DNA-binding site II is required for RAD51 recombinogenic activity in Arabidopsis thaliana

IF 4.7 3区材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-05-20 DOI:10.26508/lsa.202402701

Valentine Petiot, Charles White, O. Da Ines

引用次数: 0

Abstract

The activity promoted by RAD51 DNA-binding site II is not required for nucleofilament formation but is essential for subsequent invasion and strand exchange activity of RAD51 in Arabidopsis thaliana.

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

拟南芥的 RAD51 重组活性需要 DNA 结合位点 II

RAD51 DNA 结合位点 II 促进的活性不是核丝形成所必需的，但对拟南芥中 RAD51 的后续侵染和链交换活性至关重要。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文去求助

来源期刊

ACS Applied Electronic Materials Multiple-

CiteScore

7.20

自引率

4.30%

发文量

567

期刊介绍： ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/Abstracted： Web of Science SCIE Scopus CAS INSPEC Portico

期刊最新文献

Issue Editorial Masthead Issue Publication Information Reconfiguration of van der Waals-like Interface in Superlattice Phase Change Material for Data Storage and Computing Skin-Inspired Flexible Dual-Mode Tactile Sensor for Material and Hardness Perception Structure–Function Coupling in Pyridyl Triazole Copolymers for Neuromorphic Synaptic Transistors