Synthesis and characterization of BaBiLaNbVO9 for temperature-based sensor application

Abstract

BaBiLaNbVO₉ is a lead-free compound and has been synthesized by solid-state technique. The formation of the compound was confirmed by X-ray diffraction and is found to be crystallized in the monoclinic (space group P 2₁) crystal system (a = 13.7464± 0.0015 Å, b = 4.0156± 0.0012 Å, c = 12.4946 ± 0.0018 Å, β = 93.48 ± 0.01^o). The crystallite size was found to be 52.91 nm. SEM and EDX studies analyzed the morphology, composition, and elemental distribution in the specimen. The average grain size is about 1.0651 μm. Several properties, such as frequency and temperature response resistivity, conductivity, and dielectric behaviours of the compound, have been analyzed. The overlapping large polaron tunnelling (OLPT) and correlated barrier hopping (CBH) models are appropriate for electrical conduction in the compound. The energy band gap (E_g) of the material was 2.40 eV, suitable for optoelectronic devices. Ferroelectric behaviour may be deduced from symmetric and well-shaped P-E hysteresis loops. The impedance study satisfies the negative temperature coefficient of resistance (NTCR) behaviour, which is suitable for thermistor devices and its correlated application.