Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Electronic Materials Pub Date : 2024-05-29 DOI:10.1002/aelm.202400061
Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim
{"title":"Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing","authors":"Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim","doi":"10.1002/aelm.202400061","DOIUrl":null,"url":null,"abstract":"This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec<jats:sup>−1</jats:sup>) and a high on/off ratio (≥ 10<jats:sup>7</jats:sup>). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400061","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.
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由准非易失性存储器件组成的用于神经形态计算的二值化神经网络
本研究提出了一种由准非易失性存储器(QNVM)器件组成的二值化神经网络(BNN),该器件在正反馈回路机制中运行,具有极低的阈下摆动(≤ 5 mV dec-1)和较高的开/关比(≥ 107)。细胞阵列中的单个突触细胞使用一对 QNVM 器件,其存储状态代表突触权重,施加到这对器件上的电压以互补方式充当输入。突触单元阵列使用 XNOR 和电流求和法在权重矩阵和输入向量之间进行矩阵乘积 (MAC) 运算。所有 MAC 运算和向量矩阵乘法的结果都是等效的。此外,由于器件均匀性高(1.35%),BNN 在 MNIST 图像识别模拟中的准确率高达 93.32%,这证明了紧凑型高性能神经形态计算的可行性。
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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