Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang
Terahertz (THz) communication has emerged as a pivotal research directions for the sixth-generation (6G) mobile communication systems, owing to its outstanding potential in ultra-high data rates, extremely low latency, and massive capacity. Metasurface technology, particularly reconfigurable intelligent surfaces (RIS), as a disruptive approach for electromagnetic wave manipulation, offers a novel pathway to overcome the channel propagation limitations in THz communications. It significantly accelerates the development of dynamic THz functional devices and promotes their practical application in real-world systems. This article provides a systematic review of recent advances in three interconnected areas of RIS-assisted THz communication systems: channel modeling, channel estimation, and localization. In channel modeling, innovative theoretical frameworks address near-field effects in large-scale arrays and complex propagation environments. For channel estimation, efficient methods leverage sparsity and low-rank properties, alongside artificial intelligence-driven joint optimization strategies. Localization research emphasizes high-precision near-field architectures and their integration in sophisticated systems such as integrated sensing and communication, with added analysis of performance potential. This review aims to serve as a comprehensive reference for researchers working on channel-related technologies in THz RIS-assisted communications and to stimulate further research and practical applications toward future intelligent communication systems.
{"title":"Terahertz Channel Modeling, Estimation and Localization in RIS-Assisted Systems","authors":"Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang","doi":"10.1002/aelm.202500590","DOIUrl":"https://doi.org/10.1002/aelm.202500590","url":null,"abstract":"Terahertz (THz) communication has emerged as a pivotal research directions for the sixth-generation (6G) mobile communication systems, owing to its outstanding potential in ultra-high data rates, extremely low latency, and massive capacity. Metasurface technology, particularly reconfigurable intelligent surfaces (RIS), as a disruptive approach for electromagnetic wave manipulation, offers a novel pathway to overcome the channel propagation limitations in THz communications. It significantly accelerates the development of dynamic THz functional devices and promotes their practical application in real-world systems. This article provides a systematic review of recent advances in three interconnected areas of RIS-assisted THz communication systems: channel modeling, channel estimation, and localization. In channel modeling, innovative theoretical frameworks address near-field effects in large-scale arrays and complex propagation environments. For channel estimation, efficient methods leverage sparsity and low-rank properties, alongside artificial intelligence-driven joint optimization strategies. Localization research emphasizes high-precision near-field architectures and their integration in sophisticated systems such as integrated sensing and communication, with added analysis of performance potential. This review aims to serve as a comprehensive reference for researchers working on channel-related technologies in THz RIS-assisted communications and to stimulate further research and practical applications toward future intelligent communication systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506540","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sungbin Choi, Yeong-sinn Ye, Chanho Jeong, Yujin Mun, Suyoun Oh, Tae-il Kim
Implantable strain sensors offer opportunities for continuous biomechanical monitoring, but their performance deteriorates severely once embedded in soft tissue due to mechanical shielding that suppresses strain transmission to the sensing layer. Here, we present a bio-inspired mechanical amplification (MA) strategy that restores high sensitivity in compliant environments by reengineering the deformation pathway surrounding a crack-based strain sensor. A rigid microscale MA block, positioned on the sensing layer, induces deformation asymmetry under external loading, redirecting compressive forces into localized bending and tensile strain that effectively opens nanoscale cracks. Through theoretical modeling, FEM analysis, and experimental validation, we demonstrate that the amplification magnitude is precisely tunable by MA block height, sensor embedding depth, block shape, and modulus contrast between the block and the surrounding elastomer matrix. This MA design principle enhances single sensor sensitivity by more than an order of magnitude (∼11.08×) and maintains stable performance across multi-pixel arrays, enabling high-resolution tactile mapping even when deeply embedded within soft substrates. The MA strategy thus provides a generalized framework for overcoming mechanical shielding and offers a pathway toward next-generation implantable tactile interfaces and soft bioelectronic systems requiring high sensitivity and robust performance in mechanically dissipative environments.
{"title":"Bio-Inspired Mechanical Amplification Block on Implantable Tactile Sensors","authors":"Sungbin Choi, Yeong-sinn Ye, Chanho Jeong, Yujin Mun, Suyoun Oh, Tae-il Kim","doi":"10.1002/aelm.202500874","DOIUrl":"https://doi.org/10.1002/aelm.202500874","url":null,"abstract":"Implantable strain sensors offer opportunities for continuous biomechanical monitoring, but their performance deteriorates severely once embedded in soft tissue due to mechanical shielding that suppresses strain transmission to the sensing layer. Here, we present a bio-inspired mechanical amplification (MA) strategy that restores high sensitivity in compliant environments by reengineering the deformation pathway surrounding a crack-based strain sensor. A rigid microscale MA block, positioned on the sensing layer, induces deformation asymmetry under external loading, redirecting compressive forces into localized bending and tensile strain that effectively opens nanoscale cracks. Through theoretical modeling, FEM analysis, and experimental validation, we demonstrate that the amplification magnitude is precisely tunable by MA block height, sensor embedding depth, block shape, and modulus contrast between the block and the surrounding elastomer matrix. This MA design principle enhances single sensor sensitivity by more than an order of magnitude (∼11.08×) and maintains stable performance across multi-pixel arrays, enabling high-resolution tactile mapping even when deeply embedded within soft substrates. The MA strategy thus provides a generalized framework for overcoming mechanical shielding and offers a pathway toward next-generation implantable tactile interfaces and soft bioelectronic systems requiring high sensitivity and robust performance in mechanically dissipative environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506539","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff
Memristive crossbar arrays are a key technology for analog in-memory computing in AI accelerators and neuromorphic systems. The inherent device nonlinearities are advantageous, suppressing sneak-path currents in selector-less (1R) arrays, enabling 3D back-end-of-line integration, and ensuring read stability against the voltage-time dilemma. However, these same properties, combined with device variability, IR drop, and parasitic effects, severely challenge precise programming. Conventional amplitude-modulated write-verify algorithms are consequently slow, energy-intensive, and limited by write endurance. Here, a time-modulated write algorithm is introduced, specifically designed for analog-switching 1R crossbars. It employs a single programming voltage, varying only the write pulse duration. The algorithm leverages a compact model to estimate an initial optimal write time, which is then refined by a dynamic gain mechanism that rapidly compensates for deviations arising from non-ideal effects. The method's performance is validated through SPICE simulations of a physics-based / model across various crossbar sizes and V/2, V/3 and floating biasing schemes. The results demonstrate that the time-modulated approach significantly reduces write iterations and total programming time, while simultaneously lowering energy consumption and improving final conductance accuracy. This proposed algorithm enables faster, more energy-efficient weight updates and restoration in memristive neural network accelerators.
{"title":"Model-Based Time-Modulated Write Algorithm for 1R Analog Memristive Crossbar Arrays","authors":"Richard Schroedter, Ahmet Samil Demirkol, Ioannis Messaris, Christian Bruchatz, Eter Mgeladze, Stefan Slesazeck, Thomas Mikolajick, Ronald Tetzlaff","doi":"10.1002/aelm.202500777","DOIUrl":"https://doi.org/10.1002/aelm.202500777","url":null,"abstract":"Memristive crossbar arrays are a key technology for analog in-memory computing in AI accelerators and neuromorphic systems. The inherent device nonlinearities are advantageous, suppressing sneak-path currents in selector-less (1R) arrays, enabling 3D back-end-of-line integration, and ensuring read stability against the voltage-time dilemma. However, these same properties, combined with device variability, IR drop, and parasitic effects, severely challenge precise programming. Conventional amplitude-modulated write-verify algorithms are consequently slow, energy-intensive, and limited by write endurance. Here, a time-modulated write algorithm is introduced, specifically designed for analog-switching 1R crossbars. It employs a single programming voltage, varying only the write pulse duration. The algorithm leverages a compact model to estimate an initial optimal write time, which is then refined by a dynamic gain mechanism that rapidly compensates for deviations arising from non-ideal effects. The method's performance is validated through SPICE simulations of a physics-based <span data-altimg=\"/cms/asset/6566fd38-7c8c-4fb8-98e3-094cf3edcd79/aelm70335-math-0001.png\"></span><math altimg=\"urn:x-wiley:2199160X:media:aelm70335:aelm70335-math-0001\" display=\"inline\" location=\"graphic/aelm70335-math-0001.png\">\u0000<semantics>\u0000<mrow>\u0000<msub>\u0000<mi>Nb</mi>\u0000<mn>2</mn>\u0000</msub>\u0000<msub>\u0000<mi mathvariant=\"normal\">O</mi>\u0000<mn>5</mn>\u0000</msub>\u0000</mrow>\u0000${rm Nb}_2{rm O}_5$</annotation>\u0000</semantics></math>/<span data-altimg=\"/cms/asset/68b63b54-9ff9-4f0d-b93c-f8429273faae/aelm70335-math-0002.png\"></span><math altimg=\"urn:x-wiley:2199160X:media:aelm70335:aelm70335-math-0002\" display=\"inline\" location=\"graphic/aelm70335-math-0002.png\">\u0000<semantics>\u0000<mrow>\u0000<msub>\u0000<mi>Al</mi>\u0000<mn>2</mn>\u0000</msub>\u0000<msub>\u0000<mi mathvariant=\"normal\">O</mi>\u0000<mn>3</mn>\u0000</msub>\u0000</mrow>\u0000${rm Al}_2{rm O}_3$</annotation>\u0000</semantics></math> model across various crossbar sizes and V/2, V/3 and floating biasing schemes. The results demonstrate that the time-modulated approach significantly reduces write iterations and total programming time, while simultaneously lowering energy consumption and improving final conductance accuracy. This proposed algorithm enables faster, more energy-efficient weight updates and restoration in memristive neural network accelerators.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Orbital torque is one of the potential approaches to achieve current-driven magnetization switching in next-generation spintronic devices, where the field-like orbital torque plays a critical role to obtain field-free magnetization switching. Here, we report a large field-like orbital torque observed in FeNi/Cr heterostructures by the symmetric components of the spin-torque ferromagnetic resonance signals, which induced a sin2θ symmetry in the angular dependence of the symmetric component amplitudes. This field-like orbital torque is along the m × z direction, with an efficiency (−0.033) comparable to that of the damping-like torque (0.068). A significant tilting of the orbital current polarization generated by the orbital Hall effect in the Cr layer leads to the z-component of the orbital current polarization and the large field-like orbital torque. Furthermore, the y-component of the orbital current polarization shows a reversal behavior as the Cr thickness decreases, demonstrating the competition between the orbital currents generated by the surface oxide layer and those within the Cr bulk. These findings provide insights into the orbital torques in the 3d transition metals and highlight the potential of orbital-torque-driven magnetization switching in the absence of external magnetic fields for the applications of spintronic devices.
{"title":"Large Field-Like Orbital Torque in FeNi/Cr Heterostructures","authors":"Zhendong Chen, Wenjing Zhong, Shun Wang, Zhongxiang Zhang, Xiangyu Zheng, Yongbing Xu, Peiyan Liu, Wenjing Hu, Xinbao Geng, Chen Yao, Tiejun Zhou, Bo Liu, Guanqi Li, Sheng Jiang, Junlin Wang, Jing Wu","doi":"10.1002/aelm.202500838","DOIUrl":"https://doi.org/10.1002/aelm.202500838","url":null,"abstract":"Orbital torque is one of the potential approaches to achieve current-driven magnetization switching in next-generation spintronic devices, where the field-like orbital torque plays a critical role to obtain field-free magnetization switching. Here, we report a large field-like orbital torque observed in FeNi/Cr heterostructures by the symmetric components of the spin-torque ferromagnetic resonance signals, which induced a sin2<i>θ</i> symmetry in the angular dependence of the symmetric component amplitudes. This field-like orbital torque is along the <i><b>m</b></i> × <i><b>z</b></i> direction, with an efficiency (−0.033) comparable to that of the damping-like torque (0.068). A significant tilting of the orbital current polarization generated by the orbital Hall effect in the Cr layer leads to the <b><i>z</i></b>-component of the orbital current polarization and the large field-like orbital torque. Furthermore, the <b><i>y</i></b>-component of the orbital current polarization shows a reversal behavior as the Cr thickness decreases, demonstrating the competition between the orbital currents generated by the surface oxide layer and those within the Cr bulk. These findings provide insights into the orbital torques in the 3d transition metals and highlight the potential of orbital-torque-driven magnetization switching in the absence of external magnetic fields for the applications of spintronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"20 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer
This work presents the electrical characterization of sixteen different logic gates built entirely from three-independent-gate reconfigurable transistors. The circuits are fabricated on full-scale 300 mm wafers using the industrial 22 nm fully depleted silicon-on-insulator process of GlobalFoundries, with only minimal modifications to the baseline CMOS flow. The demonstrations include a reconfigurable 2-2 AND-OR-Inverter gate and a fully functional 1-bit adder comprising eight transistors. Quasi-static and transient on-wafer measurements confirm correct functionality and provide insight into the frequency limitations imposed by the current design and test setup. Finally, to explore scalability, a ripple-carry adder is simulated based on the experimentally realized 1-bit adder, illustrating how scaled devices and optimized layouts could enable low-power, CMOS-compatible applications.
{"title":"A Compendium of Logic Gates Based on Reconfigurable Three-Independent-Gate Transistors Realized in FDSOI Hardware","authors":"Juan P. Martinez, Yuxuan He, Giulio Galderisi, Violetta Sessi, Niladri Bhattacharjee, Peter Baars, Kerstin Poenisch, Annekathrin Zeun, Konstantin Li, Fernando Koch, Binit Syamal, Thomas Mikolajick, Jens Trommer","doi":"10.1002/aelm.202500782","DOIUrl":"https://doi.org/10.1002/aelm.202500782","url":null,"abstract":"This work presents the electrical characterization of sixteen different logic gates built entirely from three-independent-gate reconfigurable transistors. The circuits are fabricated on full-scale 300 mm wafers using the industrial 22 nm fully depleted silicon-on-insulator process of GlobalFoundries, with only minimal modifications to the baseline CMOS flow. The demonstrations include a reconfigurable 2-2 AND-OR-Inverter gate and a fully functional 1-bit adder comprising eight transistors. Quasi-static and transient on-wafer measurements confirm correct functionality and provide insight into the frequency limitations imposed by the current design and test setup. Finally, to explore scalability, a ripple-carry adder is simulated based on the experimentally realized 1-bit adder, illustrating how scaled devices and optimized layouts could enable low-power, CMOS-compatible applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"95 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu
Programmable metasurfaces enable various novel functionalities, including real-time beam steering, high-resolution imaging, adaptive wireless communications, and so on, by dynamically tuning electromagnetic wavefronts. These capabilities hold significant promise for transformative applications in reconfigurable antennas, smart sensing systems, and encrypted data transmission within emerging 5G/6G networks. In this article, we provide a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, encompassing various control mechanisms including electrical, thermal, optical and mechanical tuning. We begin by discussing electrically controlled metasurfaces based on Positive-Intrinsic-Negative(PIN) diodes or varactor diodes, highlighting their reconfigurable applications in beam scanning, imaging, and wireless communications. The review then explores the distinct advantages of liquid crystals and graphene in achieving dynamic electromagnetic control, along with representative devices. Additionally, we analyze thermally controlled metasurfaces that utilize <span data-altimg="/cms/asset/64548522-b4a7-49ad-bd33-caa25aa7ec22/aelm70334-math-0001.png"></span><mjx-container ctxtmenu_counter="2" ctxtmenu_oldtabindex="1" jax="CHTML" role="application" sre-explorer- style="font-size: 103%; position: relative;" tabindex="0"><mjx-math aria-hidden="true" location="graphic/aelm70334-math-0001.png"><mjx-semantics><mjx-msub data-semantic-children="0,1" data-semantic- data-semantic-role="unknown" data-semantic-speech="upper V upper O 2" data-semantic-type="subscript"><mjx-mi data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier"><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi><mjx-script style="vertical-align: -0.15em;"><mjx-mn data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="integer" data-semantic-type="number" size="s"><mjx-c></mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-semantics></mjx-math><mjx-assistive-mml display="inline" unselectable="on"><math altimg="urn:x-wiley:2199160X:media:aelm70334:aelm70334-math-0001" display="inline" location="graphic/aelm70334-math-0001.png" xmlns="http://www.w3.org/1998/Math/MathML"><semantics><msub data-semantic-="" data-semantic-children="0,1" data-semantic-role="unknown" data-semantic-speech="upper V upper O 2" data-semantic-type="subscript"><mi data-semantic-="" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier">VO</mi><mn data-semantic-="" data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="integer" data-semantic-type="number">2</mn></msub>${rm VO}_2$</annotation></semantics></math></mjx-assistive-mml></mjx-container> and chalcogenide phase-change materials, as well as optically controlled metasurfaces driven by structu
{"title":"Recent Advances in Programmable Metasurfaces and Meta-Devices","authors":"Linda Shao, Chong He, Nan Wang, Liming Si, Weiren Zhu","doi":"10.1002/aelm.202500818","DOIUrl":"https://doi.org/10.1002/aelm.202500818","url":null,"abstract":"Programmable metasurfaces enable various novel functionalities, including real-time beam steering, high-resolution imaging, adaptive wireless communications, and so on, by dynamically tuning electromagnetic wavefronts. These capabilities hold significant promise for transformative applications in reconfigurable antennas, smart sensing systems, and encrypted data transmission within emerging 5G/6G networks. In this article, we provide a comprehensive review of recent advances in microwave and terahertz programmable metasurfaces, encompassing various control mechanisms including electrical, thermal, optical and mechanical tuning. We begin by discussing electrically controlled metasurfaces based on Positive-Intrinsic-Negative(PIN) diodes or varactor diodes, highlighting their reconfigurable applications in beam scanning, imaging, and wireless communications. The review then explores the distinct advantages of liquid crystals and graphene in achieving dynamic electromagnetic control, along with representative devices. Additionally, we analyze thermally controlled metasurfaces that utilize <span data-altimg=\"/cms/asset/64548522-b4a7-49ad-bd33-caa25aa7ec22/aelm70334-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"2\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70334-math-0001.png\"><mjx-semantics><mjx-msub data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"upper V upper O 2\" data-semantic-type=\"subscript\"><mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c></mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70334:aelm70334-math-0001\" display=\"inline\" location=\"graphic/aelm70334-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><msub data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-role=\"unknown\" data-semantic-speech=\"upper V upper O 2\" data-semantic-type=\"subscript\"><mi data-semantic-=\"\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\">VO</mi><mn data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\">2</mn></msub>${rm VO}_2$</annotation></semantics></math></mjx-assistive-mml></mjx-container> and chalcogenide phase-change materials, as well as optically controlled metasurfaces driven by structu","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García-López, C. P. Collier
A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto a bolaamphiphilic axle was incorporated into droplet interface bilayers (DIBs). The azobenzene groups on the ring underwent quasi-reversible, photoisomerization-induced cycling between 1-E and 1-Z configurations when irradiated with 370 and 467 nm light, respectively, enabling programmable access to different history-dependent electrical behaviors from the same membrane. In the 1-E configuration, bilayers exhibited type-IIactive memristance that coincided with increasingly elevated ionic conduction, associated with progressively enhanced bilayer permeability during voltage cycling. In the 1-Z configuration, bilayers displayed type-I, passive memcapacitive behavior, reflecting tighter lipid packing and reduced ionic permeability. Photoswitching also yielded a nonvolatile, photoresponsive memcapacitor that could be modulated repetitively with negligible loss, likely via reversible changes in membrane thickness. Concurrent ohmic leakage currents across the membrane were less than 0.3%. These results agree with previous studies with increasing membrane permeability using photoswitchable rotaxanes and provide new insights into the coupling between volatile and nonvolatile memcapacitance during photoisomerization. More broadly, they demonstrate a new strategy for the manipulation of neuromorphic behaviors in soft materials using light, with implications for brain-inspired computation and sensing.
{"title":"Photoresponsive Rotaxanes Switch Lipid Bilayer Neuromorphic Behavior with Light","authors":"P.T. Podar, U.N.K. Conthagamage, J. Katsaras, V. García-López, C. P. Collier","doi":"10.1002/aelm.202500759","DOIUrl":"https://doi.org/10.1002/aelm.202500759","url":null,"abstract":"A rotaxane consisting of a macrocycle ring with two azobenzene units mechanically interlocked onto a bolaamphiphilic axle was incorporated into droplet interface bilayers (DIBs). The azobenzene groups on the ring underwent quasi-reversible, photoisomerization-induced cycling between <b>1-</b><i>E</i> and <b>1</b>-<i>Z</i> configurations when irradiated with 370 and 467 nm light, respectively, enabling programmable access to different history-dependent electrical behaviors from the same membrane. In the <b>1</b><i>-E</i> configuration, bilayers exhibited type-IIactive memristance that coincided with increasingly elevated ionic conduction, associated with progressively enhanced bilayer permeability during voltage cycling. In the <b>1</b><i>-Z</i> configuration, bilayers displayed type-I, passive memcapacitive behavior, reflecting tighter lipid packing and reduced ionic permeability. Photoswitching also yielded a nonvolatile, photoresponsive memcapacitor that could be modulated repetitively with negligible loss, likely via reversible changes in membrane thickness. Concurrent ohmic leakage currents across the membrane were less than 0.3%. These results agree with previous studies with increasing membrane permeability using photoswitchable rotaxanes and provide new insights into the coupling between volatile and nonvolatile memcapacitance during photoisomerization. More broadly, they demonstrate a new strategy for the manipulation of neuromorphic behaviors in soft materials using light, with implications for brain-inspired computation and sensing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"35 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496171","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aleksandar Opančar, Eric Daniel Głowacki, Vedran Đerek
Extracellular microstimulation depends on neuronal excitability and on how current enters the electrolyte through the electrode–electrolyte interface and the cell–electrode cleft. Here we compare two ideal interface limits—capacitive (polarizable) and Faradaic (non-polarizable)—using a fully coupled finite-element model linked to a Hodgkin–Huxley neuron with an explicit axon initial segment. Using square current pulses, we quantify activation thresholds as the charge delivered per unit electrode area. We consider 10 µm (AIS-aligned) and 100 µm (soma-aligned) disk electrodes and vary the cleft gap from 100 nm to 2 µm, spanning typical adherent multielectrode-array conditions. Across all geometries, capacitive interfaces require less charge density to trigger spikes than Faradaic interfaces, with the advantage increasing in tighter clefts. Time-resolved maps show that both interfaces initially exhibit edge crowding; however, capacitive charging locally increases interfacial impedance and redistributes current toward regions beneath the cell, whereas Faradaic contacts remain near-equipotential and sustain an edge-dominated pattern. All operating points fall below conservative Shannon safety limits. These results clarify when capacitive microelectrodes can outperform Faradaic ones under current control and provide guidance for MEA design.
{"title":"Capacitive versus Faradaic Microelectrodes for Extracellular Stimulation: A Fully Coupled FEM–Hodgkin–Huxley Study of Thresholds and Current Redistribution","authors":"Aleksandar Opančar, Eric Daniel Głowacki, Vedran Đerek","doi":"10.1002/aelm.202500867","DOIUrl":"https://doi.org/10.1002/aelm.202500867","url":null,"abstract":"Extracellular microstimulation depends on neuronal excitability and on how current enters the electrolyte through the electrode–electrolyte interface and the cell–electrode cleft. Here we compare two ideal interface limits—capacitive (polarizable) and Faradaic (non-polarizable)—using a fully coupled finite-element model linked to a Hodgkin–Huxley neuron with an explicit axon initial segment. Using square current pulses, we quantify activation thresholds as the charge delivered per unit electrode area. We consider 10 µm (AIS-aligned) and 100 µm (soma-aligned) disk electrodes and vary the cleft gap from 100 nm to 2 µm, spanning typical adherent multielectrode-array conditions. Across all geometries, capacitive interfaces require less charge density to trigger spikes than Faradaic interfaces, with the advantage increasing in tighter clefts. Time-resolved maps show that both interfaces initially exhibit edge crowding; however, capacitive charging locally increases interfacial impedance and redistributes current toward regions beneath the cell, whereas Faradaic contacts remain near-equipotential and sustain an edge-dominated pattern. All operating points fall below conservative Shannon safety limits. These results clarify when capacitive microelectrodes can outperform Faradaic ones under current control and provide guidance for MEA design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"86 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506542","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen-Karni
Chronic disease arises slowly through complex physiological factors that require continuous monitoring and treatment. Compliant bioelectronics with soft, stretchable, and tissue-conformal designs allow for in vivo continuous monitoring through electrophysiological, mechanical, and biochemical modalities, while minimizing tissue irritation and immune system response. In this review, we discuss recent progress in material development, device design, and versatile sensing modalities that allow stable long-term operation in dynamic biological environments. We focus on chronic electrophysiological systems for neural and cardiac recording, mechanical sensing systems for strain and pressure, and electrochemical sensors for molecular biomarkers. In addition, we examine self-powered bioelectronics based on piezoelectric and triboelectric energy conversion mechanisms that eliminate the requirement for external batteries, whereas multimodal and closed-loop systems combine sensing with therapeutic feedback. We consider key parameters like material biocompatibility, device flexibility, and long-term stability that are required for chronic monitoring to maintain stable signal quality over long time periods relevant for clinical recordings. These technologies for compliant bioelectronics enable early disease diagnosis, personalized treatment and continuous intervention for patients, narrowing the gap between laboratory study and routine clinical applications.
{"title":"Chronic Disease Monitoring Using Advanced Compliant Materials for Bioelectronics","authors":"Han Kim, Mabel Bartlett, Liyang Wang, Karl Bates, Mengdi He, Myungbo Kim, Carmel Majidi, Tzahi Cohen-Karni","doi":"10.1002/aelm.202500885","DOIUrl":"https://doi.org/10.1002/aelm.202500885","url":null,"abstract":"Chronic disease arises slowly through complex physiological factors that require continuous monitoring and treatment. Compliant bioelectronics with soft, stretchable, and tissue-conformal designs allow for in vivo continuous monitoring through electrophysiological, mechanical, and biochemical modalities, while minimizing tissue irritation and immune system response. In this review, we discuss recent progress in material development, device design, and versatile sensing modalities that allow stable long-term operation in dynamic biological environments. We focus on chronic electrophysiological systems for neural and cardiac recording, mechanical sensing systems for strain and pressure, and electrochemical sensors for molecular biomarkers. In addition, we examine self-powered bioelectronics based on piezoelectric and triboelectric energy conversion mechanisms that eliminate the requirement for external batteries, whereas multimodal and closed-loop systems combine sensing with therapeutic feedback. We consider key parameters like material biocompatibility, device flexibility, and long-term stability that are required for chronic monitoring to maintain stable signal quality over long time periods relevant for clinical recordings. These technologies for compliant bioelectronics enable early disease diagnosis, personalized treatment and continuous intervention for patients, narrowing the gap between laboratory study and routine clinical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147496148","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Henrique Frulani de Paula Barbosa, Titinun Nuntapramote, Ankush Kumar, Sander van den Driesche, Michael J. Vellekoop, Dorothea Brüggemann, Björn Lüssem
Organic Electrochemical Transistors (OECT) have been widely used to detect a myriad of analytes and signals, ranging from glucose content in sweat to brain epileptiform activity. Due to their biocompatibility, small footprint, conformability, and high signal amplification, OECTs can not only be used in wearable, but also in implanted sensor systems, providing superior signal quality. However, although there is a risk of triggering the Foreign Body Reaction (FBR) with implantation, FBR impact on OECTs has rarely been discussed. Therefore, here we evaluate the effect of the FBR fibrotic response on OECT performance, i.e. when the OECT is covered by protein layers, in vitro. In more detail, we analyze poly(3,4-ethylenedioxythiophene):poly (styrene-sulfonate) (PEDOT:PSS) based OECTs and intentionally cover their channels with protein layers commonly formed during FBR, such as albumin, collagen and fibrinogen. Despite slightly increasing devices' switching time, proteins do not hamper their operation. Further coverage by yeast cells as a proof of concept of wound healing process also did not jeopardize OECT functioning, indicating devices could resist the FBR fibrotic response without anti-FBR strategies.
{"title":"Organic Electrochemical Transistors and Foreign Body Reaction: First Steps Toward Long-Term Implantable Biosensing","authors":"Henrique Frulani de Paula Barbosa, Titinun Nuntapramote, Ankush Kumar, Sander van den Driesche, Michael J. Vellekoop, Dorothea Brüggemann, Björn Lüssem","doi":"10.1002/aelm.202500737","DOIUrl":"https://doi.org/10.1002/aelm.202500737","url":null,"abstract":"Organic Electrochemical Transistors (OECT) have been widely used to detect a myriad of analytes and signals, ranging from glucose content in sweat to brain epileptiform activity. Due to their biocompatibility, small footprint, conformability, and high signal amplification, OECTs can not only be used in wearable, but also in implanted sensor systems, providing superior signal quality. However, although there is a risk of triggering the Foreign Body Reaction (FBR) with implantation, FBR impact on OECTs has rarely been discussed. Therefore, here we evaluate the effect of the FBR fibrotic response on OECT performance, i.e. when the OECT is covered by protein layers, in vitro. In more detail, we analyze poly(3,4-ethylenedioxythiophene):poly (styrene-sulfonate) (PEDOT:PSS) based OECTs and intentionally cover their channels with protein layers commonly formed during FBR, such as albumin, collagen and fibrinogen. Despite slightly increasing devices' switching time, proteins do not hamper their operation. Further coverage by yeast cells as a proof of concept of wound healing process also did not jeopardize OECT functioning, indicating devices could resist the FBR fibrotic response without anti-FBR strategies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"398 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147506544","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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