Eoin Moynihan, Yining Xie, David Cooper, Grigore Moldovan, Richard Beanland, Ana Sanchez
Electronic devices are shrinking, and scanning transmission electron microscopy is essential for the characterization of in-operando nanoscale devices. This paper demonstrates the combined capabilities of 4D-STEM and STEM-EBIC for measuring localized electronic properties (electric field strength, field direction, built-in potential, and minority carrier diffusion length) in an in-operando nanoscale device. Quantitative analysis supported by simulations enables robust interpretation of local electric fields and potential gradients. STEM-EBIC measurements at different thicknesses show a regime where the effective diffusion length of minority carriers is entirely dominated by surface recombination. In situ biasing of a symmetrically doped 4 × 1017 cm−3 p–n diode shows how 4D-STEM and STEM-EBIC complement each other for localized interpretation of electronic components.
{"title":"In-Operando 4D-STEM and STEM-EBIC Imaging of Electric Fields and Charge Carrier Behavior in Biased Silicon p–n Junctions","authors":"Eoin Moynihan, Yining Xie, David Cooper, Grigore Moldovan, Richard Beanland, Ana Sanchez","doi":"10.1002/aelm.202500415","DOIUrl":"https://doi.org/10.1002/aelm.202500415","url":null,"abstract":"Electronic devices are shrinking, and scanning transmission electron microscopy is essential for the characterization of in-operando nanoscale devices. This paper demonstrates the combined capabilities of 4D-STEM and STEM-EBIC for measuring localized electronic properties (electric field strength, field direction, built-in potential, and minority carrier diffusion length) in an in-operando nanoscale device. Quantitative analysis supported by simulations enables robust interpretation of local electric fields and potential gradients. STEM-EBIC measurements at different thicknesses show a regime where the effective diffusion length of minority carriers is entirely dominated by surface recombination. In situ biasing of a symmetrically doped 4 × 10<sup>17</sup> cm<sup>−3</sup> p–n diode shows how 4D-STEM and STEM-EBIC complement each other for localized interpretation of electronic components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138409","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hans Tornatzky, Zbigniew Galazka, Tobias Schulz, Roland Gillen, Markus R. Wagner
Ultra-wide bandgap materials are pivotal for next-generation electronic and optoelectronic devices, yet their widespread adoption is impeded by challenges in bipolar doping. Rutile germanium dioxide (r-GeO2) is a promising candidate, predicted to enable ambipolar doping and to exhibit high thermal and electronic conductivity. However, critical knowledge gaps remain regarding its lattice dynamics and phonon-related properties. In this study, we use polarization angle-resolved Raman spectroscopy on high-quality, large r-GeO2 single crystals to unambiguously determine the energies and relative Raman tensor elements of all first-order Raman-active phonons. Our experimental findings are complemented by density functional perturbation theory calculations, which reveal a consistent underbinding of phonon energies across various exchange-correlation functionals. This highlights a previously unrecognized limitation in the theoretical modeling of r-GeO2. The comprehensive characterization and accurate assignment of phonon modes provide a solid foundation for quantitative simulations of phonon-assisted processes and pave the way for the design of r-GeO2-based devices.
{"title":"Lattice Dynamics of Rutile Germanium Dioxide (r-GeO2)","authors":"Hans Tornatzky, Zbigniew Galazka, Tobias Schulz, Roland Gillen, Markus R. Wagner","doi":"10.1002/aelm.202500586","DOIUrl":"https://doi.org/10.1002/aelm.202500586","url":null,"abstract":"Ultra-wide bandgap materials are pivotal for next-generation electronic and optoelectronic devices, yet their widespread adoption is impeded by challenges in bipolar doping. Rutile germanium dioxide (r-GeO<sub>2</sub>) is a promising candidate, predicted to enable ambipolar doping and to exhibit high thermal and electronic conductivity. However, critical knowledge gaps remain regarding its lattice dynamics and phonon-related properties. In this study, we use polarization angle-resolved Raman spectroscopy on high-quality, large r-GeO<sub>2</sub> single crystals to unambiguously determine the energies and relative Raman tensor elements of all first-order Raman-active phonons. Our experimental findings are complemented by density functional perturbation theory calculations, which reveal a consistent underbinding of phonon energies across various exchange-correlation functionals. This highlights a previously unrecognized limitation in the theoretical modeling of r-GeO<sub>2</sub>. The comprehensive characterization and accurate assignment of phonon modes provide a solid foundation for quantitative simulations of phonon-assisted processes and pave the way for the design of r-GeO<sub>2</sub>-based devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146138410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silvia Bressan, Luca Camillini, Francesca Borghi, Giovanni Galafassi, Paolo Milani
The scale‐up of computation performances required by the rapidly increasing demand for the analysis and management of large databases poses serious doubts about the sustainability of von Neumann hardware architectures. Unconventional computing, taking inspiration from biological models and relying on self‐assembled systems based on nanoparticles and nanowires, may offer interesting alternatives. Here, we report the experimental characterization of the mechanisms that regulate the bistable electrical behavior and the resistive switching of self‐assembled gold nanostructured thin films. We show that the adaptive reconfiguration properties of the nanostructured network under specific input stimuli drive the reprogrammability of the device. We demonstrate how this system can be employed for the implementation of polymorphic devices, which can be used both as unconventional multiplexers (MUX) and as reconfigurable threshold logic gates (TLG), able to generate a complete set of Boolean functions.
{"title":"A Polymorphic Reconfigurable Multi‐Electrode Device Based on Electrically Bistable Nanostructured Metallic Films","authors":"Silvia Bressan, Luca Camillini, Francesca Borghi, Giovanni Galafassi, Paolo Milani","doi":"10.1002/aelm.202500636","DOIUrl":"https://doi.org/10.1002/aelm.202500636","url":null,"abstract":"The scale‐up of computation performances required by the rapidly increasing demand for the analysis and management of large databases poses serious doubts about the sustainability of von Neumann hardware architectures. Unconventional computing, taking inspiration from biological models and relying on self‐assembled systems based on nanoparticles and nanowires, may offer interesting alternatives. Here, we report the experimental characterization of the mechanisms that regulate the bistable electrical behavior and the resistive switching of self‐assembled gold nanostructured thin films. We show that the adaptive reconfiguration properties of the nanostructured network under specific input stimuli drive the reprogrammability of the device. We demonstrate how this system can be employed for the implementation of polymorphic devices, which can be used both as unconventional multiplexers (MUX) and as reconfigurable threshold logic gates (TLG), able to generate a complete set of Boolean functions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"101 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146129429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani
The integration of dielectric inserts into hafnia‐based ferroelectric stacks has emerged as a promising route to expand memory windows in ferroelectric NAND. However, the physical origin of the associated coercive voltage enhancement has remained unclear. Here, we resolve this long‐standing question by demonstrating that coercive voltage enhancement originates from resistive voltage division between the ferroelectric and dielectric layers, governed primarily by leakage in both layers. Combining Preisach modeling, defect‐based Ginestra simulations, and polarization switching experiments with external leaky dielectrics, we show that minimizing leakage in the dielectric layer ‐ intrinsically through wide‐bandgap, low‐electron‐affinity dielectrics or extrinsically by reducing defect densities ‐ provides a universal design principle for coercive voltage control. Importantly, nucleation‐limited switching kinetics remain unchanged across the heterostructures, confirming that the enhancement is driven by resistive voltage division rather than trap‐assisted mechanisms. This discovery establishes a straightforward framework for engineering large memory windows using ferroelectric–dielectric heterostructures, thereby enabling multi‐level (TLC/QLC) operation in 3D NAND. Beyond memory applications, our findings also explain the contrasting behaviors of fluorite‐ vs. perovskite‐based ferroelectric–dielectric systems, offering fundamental guidance for interfacial materials design in next‐generation electronic devices.
{"title":"Materials Design Principles for Large Memory Windows: Coercive Voltage Engineering in Ferroelectric– Dielectric Heterostructures","authors":"Prasanna Venkatesan, Hari Jayasankar, Salma Soliman, Priyankka Ravikumar, Lance Fernandes, Chinsung Park, Amrit Garlapati, Chengyang Zhang, Sanghyun Kang, Shimeng Yu, Suman Datta, Asif Khan, Mengkun Tian, Zheng Wang, Kijoon Kim, Kwangyou Seo, Kwangsoo Kim, Wanki Kim, Daewon Ha, Luca Larcher, Gaurav Thareja, Andrea Padovani","doi":"10.1002/aelm.202500702","DOIUrl":"https://doi.org/10.1002/aelm.202500702","url":null,"abstract":"The integration of dielectric inserts into hafnia‐based ferroelectric stacks has emerged as a promising route to expand memory windows in ferroelectric NAND. However, the physical origin of the associated coercive voltage enhancement has remained unclear. Here, we resolve this long‐standing question by demonstrating that coercive voltage enhancement originates from resistive voltage division between the ferroelectric and dielectric layers, governed primarily by leakage in both layers. Combining Preisach modeling, defect‐based Ginestra simulations, and polarization switching experiments with external leaky dielectrics, we show that minimizing leakage in the dielectric layer ‐ intrinsically through wide‐bandgap, low‐electron‐affinity dielectrics or extrinsically by reducing defect densities ‐ provides a universal design principle for coercive voltage control. Importantly, nucleation‐limited switching kinetics remain unchanged across the heterostructures, confirming that the enhancement is driven by resistive voltage division rather than trap‐assisted mechanisms. This discovery establishes a straightforward framework for engineering large memory windows using ferroelectric–dielectric heterostructures, thereby enabling multi‐level (TLC/QLC) operation in 3D NAND. Beyond memory applications, our findings also explain the contrasting behaviors of fluorite‐ vs. perovskite‐based ferroelectric–dielectric systems, offering fundamental guidance for interfacial materials design in next‐generation electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"241 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Claas Wieland, Felix Hermerschmidt, Vincent R. F. Schröder, Daniel Steffen Rühl, Emil J. W. List-Kratochvil
Metal halide perovskites (MHPs) are promising semiconductor materials for thin-film field-effect transistors (FETs) due to their high charge carrier mobility and solution processability. Currently, MHP thin films for FETs are mostly fabricated by spin coating, a method limited by poor material utilization, non-uniformity, and scalability issues. In this study, inkjet-printing (IJP) is successfully introduced as a sustainable, additive technique for MHP thin-film FET fabrication. Spin-coated benchmark devices were first established as a performance reference achieving a mobility of 2.2 cm2 V−1 s−1 and an on/off ratio of 8 × 106. Two inkjet-based strategies are investigated: full-substrate printing and selective in-channel printing. With the full-substrate printing approach we could achieve 1.6 cm2 V−1 s−1 and an on/off ratio of 2 × 106, which replicates the device performance of the spin coated reference devices. In-channel printing enables full patterning of the FET active region and significantly reduces material waste but suffers from reduced device performance due to the coffee ring effect. By scaling the printed area and effectively isolating the coffee ring, the adverse effects are successfully mitigated, enabling a substantial recovery of device performance. This study highlights the strong potential of IJP for the fabrication of MHP thin-film FETs and provides valuable insights into overcoming current challenges. Overall, the results demonstrate that IJP is a highly promising route toward the scalable production of fully printed, high-performance perovskite electronics.
{"title":"Inkjet-Printed Metal Halide Perovskite Thin-Film Field-Effect Transistors","authors":"Claas Wieland, Felix Hermerschmidt, Vincent R. F. Schröder, Daniel Steffen Rühl, Emil J. W. List-Kratochvil","doi":"10.1002/aelm.202500517","DOIUrl":"https://doi.org/10.1002/aelm.202500517","url":null,"abstract":"Metal halide perovskites (MHPs) are promising semiconductor materials for thin-film field-effect transistors (FETs) due to their high charge carrier mobility and solution processability. Currently, MHP thin films for FETs are mostly fabricated by spin coating, a method limited by poor material utilization, non-uniformity, and scalability issues. In this study, inkjet-printing (IJP) is successfully introduced as a sustainable, additive technique for MHP thin-film FET fabrication. Spin-coated benchmark devices were first established as a performance reference achieving a mobility of 2.2 cm<sup>2</sup> V<sup>−</sup><sup>1</sup> s<sup>−</sup><sup>1</sup> and an on/off ratio of 8 × 10<sup>6</sup>. Two inkjet-based strategies are investigated: full-substrate printing and selective in-channel printing. With the full-substrate printing approach we could achieve 1.6 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and an on/off ratio of 2 × 10<sup>6</sup>, which replicates the device performance of the spin coated reference devices. In-channel printing enables full patterning of the FET active region and significantly reduces material waste but suffers from reduced device performance due to the coffee ring effect. By scaling the printed area and effectively isolating the coffee ring, the adverse effects are successfully mitigated, enabling a substantial recovery of device performance. This study highlights the strong potential of IJP for the fabrication of MHP thin-film FETs and provides valuable insights into overcoming current challenges. Overall, the results demonstrate that IJP is a highly promising route toward the scalable production of fully printed, high-performance perovskite electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"302 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146122231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann-Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider
Zirconium and hafnium doped indium tin oxide (ITO) thin films are fabricated via atomic layer deposition (ALD) at 200°C from trimethylindium, tetrakis(dimethylamido)tin, tetrakis(dimethylamido)zirconium, and tetrakis(diethylamido)hafnium, using water as oxidant. Grazing incidence X-ray total scattering employing synchrotron radiation reveals a highly disordered structure with a short-range order, exhibiting correlation lengths of up to ∼13 Å. This is also reflected in high-resolution transmission electron microscopy, revealing an amorphous intermixed state of all constituting components. Increasing amounts of fully coordinated oxygen species with increasing amounts of dopant are evidenced by X-ray photoelectron spectroscopy analysis and attributed to zirconium and hafnium's ability to form strong oxygen bonds, and thereby suppressing the formation of oxygen vacancies. The Zr- and Hf-doped ITO thin films are integrated into thin-film transistor (TFT) devices to evaluate their suitability as semiconducting material. The electrical measurements reveal saturation mobilities (µsat) of 1.92–9.81 cm2 V−1 s−1, with high current on/off ratios (IOn/IOff) of 106–108. This study demonstrates the subtle influence of small amounts of Zr and Hf on TFT performance. This proves the ability to control the electrical behavior of TFT devices by controlled incorporation of dopants like Zr and Hf into their active channel layer.
{"title":"Precise Tailoring of Charge Transport Characteristics in Zr and Hf Doped Indium Tin Oxide Thin Film Transistors","authors":"Marie Isabelle Büschges, Christian Dietz, Vanessa Trouillet, Ann-Christin Dippel, Fernando Igoa Saldaña, Jörg J. Schneider","doi":"10.1002/aelm.202500722","DOIUrl":"https://doi.org/10.1002/aelm.202500722","url":null,"abstract":"Zirconium and hafnium doped indium tin oxide (ITO) thin films are fabricated via atomic layer deposition (ALD) at 200°C from trimethylindium, tetrakis(dimethylamido)tin, tetrakis(dimethylamido)zirconium, and tetrakis(diethylamido)hafnium, using water as oxidant. Grazing incidence X-ray total scattering employing synchrotron radiation reveals a highly disordered structure with a short-range order, exhibiting correlation lengths of up to ∼13 Å. This is also reflected in high-resolution transmission electron microscopy, revealing an amorphous intermixed state of all constituting components. Increasing amounts of fully coordinated oxygen species with increasing amounts of dopant are evidenced by X-ray photoelectron spectroscopy analysis and attributed to zirconium and hafnium's ability to form strong oxygen bonds, and thereby suppressing the formation of oxygen vacancies. The Zr- and Hf-doped ITO thin films are integrated into thin-film transistor (TFT) devices to evaluate their suitability as semiconducting material. The electrical measurements reveal saturation mobilities (<i>µ<sub>s</sub><sub>at</sub></i>) of 1.92–9.81 cm<sup>2</sup> V<sup>−1 </sup>s<sup>−1</sup>, with high current on/off ratios (<i>I<sub>On</sub>/I<sub>Off</sub></i>) of 10<sup>6</sup>–10<sup>8</sup>. This study demonstrates the subtle influence of small amounts of Zr and Hf on TFT performance. This proves the ability to control the electrical behavior of TFT devices by controlled incorporation of dopants like Zr and Hf into their active channel layer.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"111 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146115907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Changhyeon Han, Been Kwak, Hyun-Min Kim, Dahye Yu, Daewoong Kwon
We investigated a TiO2-engineered interfacial strategy to enhance the stability and reliability of hafnia-based ferroelectric field-effect transistors (FeFETs) employing a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) architecture. Although the MFMIS configuration facilitates optimized voltage distribution and suppresses charge injection into the dielectric layer, interfacial defects—particularly oxygen vacancies (VOs)—at the floating gate/ferroelectric interface continue to degrade switching performance. To address this issue, we introduced an ultrathin TiO2 interlayer between the floating gate (FG) and the ferroelectric layer. Acting as an oxygen reservoir, the TiO2 interlayer effectively mitigates VO formation and stabilizes the interfacial structure. X-ray photoelectron spectroscopy and electron energy loss spectroscopy analyses confirm a reduced concentration of VO at the interface. Consequently, TiO2-inserted MFMIS devices exhibit enlarged and more stable memory windows, along with enhanced ferroelectric characteristics. Furthermore, low-frequency noise analysis reveals a significant reduction in defect-related fluctuations, indicating suppressed trap dynamics. Collectively, these results demonstrate that TiO2 interface engineering offers a scalable and complementary metal-oxide-semiconductor-compatible strategy to address reliability challenges in hafnia-based ferroelectric transistors.
{"title":"Interface-Engineered TiO2 Interlayer for Reliable Hafnia-Based MFMIS FeFETs","authors":"Changhyeon Han, Been Kwak, Hyun-Min Kim, Dahye Yu, Daewoong Kwon","doi":"10.1002/aelm.202500767","DOIUrl":"https://doi.org/10.1002/aelm.202500767","url":null,"abstract":"We investigated a TiO<sub>2</sub>-engineered interfacial strategy to enhance the stability and reliability of hafnia-based ferroelectric field-effect transistors (FeFETs) employing a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) architecture. Although the MFMIS configuration facilitates optimized voltage distribution and suppresses charge injection into the dielectric layer, interfacial defects—particularly oxygen vacancies (V<sub>O</sub>s)—at the floating gate/ferroelectric interface continue to degrade switching performance. To address this issue, we introduced an ultrathin TiO<sub>2</sub> interlayer between the floating gate (FG) and the ferroelectric layer. Acting as an oxygen reservoir, the TiO<sub>2</sub> interlayer effectively mitigates V<sub>O</sub> formation and stabilizes the interfacial structure. X-ray photoelectron spectroscopy and electron energy loss spectroscopy analyses confirm a reduced concentration of V<sub>O</sub> at the interface. Consequently, TiO<sub>2</sub>-inserted MFMIS devices exhibit enlarged and more stable memory windows, along with enhanced ferroelectric characteristics. Furthermore, low-frequency noise analysis reveals a significant reduction in defect-related fluctuations, indicating suppressed trap dynamics. Collectively, these results demonstrate that TiO<sub>2</sub> interface engineering offers a scalable and complementary metal-oxide-semiconductor-compatible strategy to address reliability challenges in hafnia-based ferroelectric transistors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"95 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146101935","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Non-volatile memristive device compatible for futuristic memory, data storage and in-memory computing with good exceptional energy efficiency will be an integral part of neuromorphic architecture. Tungsten oxide (<span data-altimg="/cms/asset/71a9cbe0-e4c1-462f-8d89-9f040ea7875e/aelm70293-math-0001.png"></span><mjx-container ctxtmenu_counter="128" ctxtmenu_oldtabindex="1" jax="CHTML" role="application" sre-explorer- style="font-size: 103%; position: relative;" tabindex="0"><mjx-math aria-hidden="true" location="graphic/aelm70293-math-0001.png"><mjx-semantics><mjx-msub data-semantic-children="0,1" data-semantic- data-semantic-role="unknown" data-semantic-speech="upper W upper O 3" data-semantic-type="subscript"><mjx-mi data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier"><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi><mjx-script style="vertical-align: -0.15em;"><mjx-mn data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="integer" data-semantic-type="number" size="s"><mjx-c></mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-semantics></mjx-math><mjx-assistive-mml display="inline" unselectable="on"><math altimg="urn:x-wiley:2199160X:media:aelm70293:aelm70293-math-0001" display="inline" location="graphic/aelm70293-math-0001.png" xmlns="http://www.w3.org/1998/Math/MathML"><semantics><msub data-semantic-="" data-semantic-children="0,1" data-semantic-role="unknown" data-semantic-speech="upper W upper O 3" data-semantic-type="subscript"><mi data-semantic-="" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier">WO</mi><mn data-semantic-="" data-semantic-annotation="clearspeak:simple" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="integer" data-semantic-type="number">3</mn></msub>${rm WO}_{3}$</annotation></semantics></math></mjx-assistive-mml></mjx-container>) is a versatile metal oxide displaying memristive characteristics where resistance states can be controlled through oxygen vacancy concentration holds great potential for such low energy neuromorphic devices. Here, we report a WO<sub>3</sub> based resistive switching memory device showing exceptional stability in switching with respect to number of dc-switching cycles (<span data-altimg="/cms/asset/c0ae8974-8066-4b49-bfdb-5fc14dfe1380/aelm70293-math-0002.png"></span><mjx-container ctxtmenu_counter="129" ctxtmenu_oldtabindex="1" jax="CHTML" role="application" sre-explorer- style="font-size: 103%; position: relative;" tabindex="0"><mjx-math aria-hidden="true" location="graphic/aelm70293-math-0002.png"><mjx-semantics><mjx-mo data-semantic- data-semantic-role="equality" data-semantic-speech="tilde" data-semantic-type="relation"><mjx-c></mjx-c></mjx-mo></mjx-semantics></mjx-math><mjx-assistive-mml display="inline" unselectable="on"><math altimg="urn:x-wiley:2199160X:media:aelm70
非易失性记忆器件兼容未来存储器、数据存储和内存计算，具有良好的卓越能效，将成为神经形态架构的一个组成部分。氧化钨（WO3 ${rm WO}_{3}$）是一种多用途的金属氧化物，具有忆阻特性，其电阻状态可以通过氧空位浓度来控制，在这种低能神经形态器件中具有很大的潜力。在这里，我们报告了一种基于WO3的电阻开关存储器件，在直流开关周期数（～ $sim$ 12 × $times$ 103 $^{3}$周期）和+0.2 V下保持时间超过5000秒方面表现出卓越的开关稳定性。基于电压应力测量，该器件提供低电压开关操作（+0.72 SET V, -0.12 RESET V），大开/关比（＆gt; $>$ 103），低能耗（每事件约$sim$ 2.1 f²J²μ²m−2 $fJ mu m^{-2}$）和动态范围约$sim$ 7。此外，还显示了配对脉冲激发（PPF）和配对脉冲抑制（PPD）等主要突触特征，这表明基于WO3 ${rm WO}_{3}$的器件适用于神经形态学应用。有趣的是，短期记忆（STM）到长期记忆（LTM）之间的过渡被认为是刺激持续时间的函数。使用MNIST数据集，学习和遗忘曲线与图像识别能力表现出很好的线性关系。～ $sim$的识别准确率为88% is achieved with respect to ideal device. This work demonstrates the effective use of WO3 based memristive device for low energy consuming neuromorphic computing applications.
{"title":"Reconfigurable, Non-Volatile Switching in WO3 Film for Resistive Memory and Multistate Programming Toward Energy-Efficient Neuromorphic Computing Applications","authors":"Keval Hadiyal, Nagarajan Raghavan, Ramesh Mohan Thamankar","doi":"10.1002/aelm.202500658","DOIUrl":"https://doi.org/10.1002/aelm.202500658","url":null,"abstract":"Non-volatile memristive device compatible for futuristic memory, data storage and in-memory computing with good exceptional energy efficiency will be an integral part of neuromorphic architecture. Tungsten oxide (<span data-altimg=\"/cms/asset/71a9cbe0-e4c1-462f-8d89-9f040ea7875e/aelm70293-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"128\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70293-math-0001.png\"><mjx-semantics><mjx-msub data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"upper W upper O 3\" data-semantic-type=\"subscript\"><mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\"><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi><mjx-script style=\"vertical-align: -0.15em;\"><mjx-mn data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\" size=\"s\"><mjx-c></mjx-c></mjx-mn></mjx-script></mjx-msub></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70293:aelm70293-math-0001\" display=\"inline\" location=\"graphic/aelm70293-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><msub data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-role=\"unknown\" data-semantic-speech=\"upper W upper O 3\" data-semantic-type=\"subscript\"><mi data-semantic-=\"\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\">WO</mi><mn data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"integer\" data-semantic-type=\"number\">3</mn></msub>${rm WO}_{3}$</annotation></semantics></math></mjx-assistive-mml></mjx-container>) is a versatile metal oxide displaying memristive characteristics where resistance states can be controlled through oxygen vacancy concentration holds great potential for such low energy neuromorphic devices. Here, we report a WO<sub>3</sub> based resistive switching memory device showing exceptional stability in switching with respect to number of dc-switching cycles (<span data-altimg=\"/cms/asset/c0ae8974-8066-4b49-bfdb-5fc14dfe1380/aelm70293-math-0002.png\"></span><mjx-container ctxtmenu_counter=\"129\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70293-math-0002.png\"><mjx-semantics><mjx-mo data-semantic- data-semantic-role=\"equality\" data-semantic-speech=\"tilde\" data-semantic-type=\"relation\"><mjx-c></mjx-c></mjx-mo></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"79 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
<p>The controlled doping of organic semiconductors has emerged as a central research direction in organic electronics, driven by the recognition that precise manipulation of carrier density is essential for fully exploiting the unique properties of these materials. Symposium T at the 2024 Spring Meeting of the European Materials Research Society (E-MRS) underscored the need for a deeper and more unified understanding of these processes. The invited contributions assembled in this Special Issue of <i>Advanced Electronic Materials</i> reflect the significant progress being made toward predictive doping strategies and rational materials design.</p> <p>One major theme addressed in this collection is the advancement of n-type doping and its implications for organic thermoelectrics. Several articles demonstrate how molecular structure, regiochemistry, and processing conditions determine the efficiency and stability of n-doped systems. Fullerene derivatives with controlled regiochemistry (202500287) reveal how crystallinity and dopant miscibility influence both conductivity and thermoelectric performance. Benzodifuranone copolymers exhibit greatly enhanced electronic transport when high backbone alignment is combined with sequential doping using N-DMBI-H. (202500047). Structural variations in benzodifuranone–isatin acceptor polymers (202500213) further demonstrate how backbone conformation governs morphology and ultimately thermoelectric behavior. The study of charge injection and transport in isoindigo–bithiophene polymers (202500098) provides insights into how molecular structure governs doped transport in field-effect devices. The contributions (202400988, 202400767) further extend the range of n-type materials and doping strategies by introducing new molecular backbones, dopant–polymer combinations, and process-compatible approaches. Together, these studies advance the understanding and application of n-type doping in organic semiconductors.</p> <p>Progress in p-type doping and hybrid transport systems is also well represented. The use of proton-coupled electron transfer enables bandgap-dependent doping in semiconducting carbon nanotube networks (202400817), where the doping level depends on both the chemical environment and the nanotube diameter. Hybrid thermoelectric composites, formed by wrapping semiconducting carbon nanotubes with a p-type polymer (202400216), demonstrate how interfacial design can promote delocalized charge transport. Improvements in dip-coated conjugated polymer films (202400695) show that processing conditions, particularly the Landau–Levich and evaporation regimes, which govern polymer packing and dopant–host interactions, have a decisive influence on thermoelectric performance. Redox-active copolymer films based on vinyl(triphenylamine) and styrene (202500645) provide a model system to study mixed ionic–electronic conduction, where variations in crosslinking density and polymer architecture directly influence reversible re
{"title":"Doping in Organic Semiconductors: Fundamentals, Materials, and Applications","authors":"Sergi Riera-Galindo","doi":"10.1002/aelm.202500846","DOIUrl":"https://doi.org/10.1002/aelm.202500846","url":null,"abstract":"<p>The controlled doping of organic semiconductors has emerged as a central research direction in organic electronics, driven by the recognition that precise manipulation of carrier density is essential for fully exploiting the unique properties of these materials. Symposium T at the 2024 Spring Meeting of the European Materials Research Society (E-MRS) underscored the need for a deeper and more unified understanding of these processes. The invited contributions assembled in this Special Issue of <i>Advanced Electronic Materials</i> reflect the significant progress being made toward predictive doping strategies and rational materials design.</p>\u0000<p>One major theme addressed in this collection is the advancement of n-type doping and its implications for organic thermoelectrics. Several articles demonstrate how molecular structure, regiochemistry, and processing conditions determine the efficiency and stability of n-doped systems. Fullerene derivatives with controlled regiochemistry (202500287) reveal how crystallinity and dopant miscibility influence both conductivity and thermoelectric performance. Benzodifuranone copolymers exhibit greatly enhanced electronic transport when high backbone alignment is combined with sequential doping using N-DMBI-H. (202500047). Structural variations in benzodifuranone–isatin acceptor polymers (202500213) further demonstrate how backbone conformation governs morphology and ultimately thermoelectric behavior. The study of charge injection and transport in isoindigo–bithiophene polymers (202500098) provides insights into how molecular structure governs doped transport in field-effect devices. The contributions (202400988, 202400767) further extend the range of n-type materials and doping strategies by introducing new molecular backbones, dopant–polymer combinations, and process-compatible approaches. Together, these studies advance the understanding and application of n-type doping in organic semiconductors.</p>\u0000<p>Progress in p-type doping and hybrid transport systems is also well represented. The use of proton-coupled electron transfer enables bandgap-dependent doping in semiconducting carbon nanotube networks (202400817), where the doping level depends on both the chemical environment and the nanotube diameter. Hybrid thermoelectric composites, formed by wrapping semiconducting carbon nanotubes with a p-type polymer (202400216), demonstrate how interfacial design can promote delocalized charge transport. Improvements in dip-coated conjugated polymer films (202400695) show that processing conditions, particularly the Landau–Levich and evaporation regimes, which govern polymer packing and dopant–host interactions, have a decisive influence on thermoelectric performance. Redox-active copolymer films based on vinyl(triphenylamine) and styrene (202500645) provide a model system to study mixed ionic–electronic conduction, where variations in crosslinking density and polymer architecture directly influence reversible re","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"83 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146089698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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