Sergio Lago-Garrido, Dominik S. Schmidt, María J. Martín-Alfonso, Lola González-García
Soft-adaptive electronics require both sensor and conductor materials. The key parameter for these materials is their mechanoelectrical properties. Liquid metals and solid conductive composites have been exploited in this application field, but both are limited by either their chemical stability or limited flexibility, respectively. Electrofluids are a novel approach toward soft electronic components. They are concentrated colloidal suspensions of conductive particles, in which dynamic contacts retain electrical conductivity under deformation, filling the gap between liquid metals and solid composites. Here, the mechanical and electrical network interplay of electrofluids is studied based on multi-walled carbon nanotubes (MWCNTs) in glycerol. These networks arise at different filler concentrations, showing a different response to external deformations. It is found that electrical conductivity occurs without the presence of a rigid mechanical network, which allows MWCNT suspensions to be electrically conductive even under flow conditions. By performing rheoelectrical measurements, the study observed how the mechanical and electrical networks evolve with the applied deformation. The study demonstrates the applicability of electrofluids with tailored mechanoelectrical properties as soft electrical connectors.
{"title":"Multi-Walled Carbon Nanotubes Suspensions as Liquid Conductors: Electrical and Mechanical Network Interplay","authors":"Sergio Lago-Garrido, Dominik S. Schmidt, María J. Martín-Alfonso, Lola González-García","doi":"10.1002/aelm.202400917","DOIUrl":"https://doi.org/10.1002/aelm.202400917","url":null,"abstract":"Soft-adaptive electronics require both sensor and conductor materials. The key parameter for these materials is their mechanoelectrical properties. Liquid metals and solid conductive composites have been exploited in this application field, but both are limited by either their chemical stability or limited flexibility, respectively. Electrofluids are a novel approach toward soft electronic components. They are concentrated colloidal suspensions of conductive particles, in which dynamic contacts retain electrical conductivity under deformation, filling the gap between liquid metals and solid composites. Here, the mechanical and electrical network interplay of electrofluids is studied based on multi-walled carbon nanotubes (MWCNTs) in glycerol. These networks arise at different filler concentrations, showing a different response to external deformations. It is found that electrical conductivity occurs without the presence of a rigid mechanical network, which allows MWCNT suspensions to be electrically conductive even under flow conditions. By performing rheoelectrical measurements, the study observed how the mechanical and electrical networks evolve with the applied deformation. The study demonstrates the applicability of electrofluids with tailored mechanoelectrical properties as soft electrical connectors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Minseok Kim, Sehwan Park, Haeyun Lee, Jimin Lee, Namsun Chou, Hyogeun Shin
Understanding neural activity across multiple brain regions, especially in three dimensions, is essential for advancing neuroscience research. However, traditional 3D electrode arrays are often restricted to fixed depths, limiting their ability to probe complex brain structures. In this study, a depth-customizable, flexible 3D multi-shank electrode array that produces precise neural recordings at various brain depths is developed. Integrating 2D flexible electrode arrays with a modular supporting board allowed the insertion depth to be easily adjusted without re-fabrication. In vivo experiments produce successful recordings from the motor cortex, somatosensory cortex, and deep structures such as the substantia nigra. Functional connectivity analysis also reveals strong correlations between the substantia nigra and motor cortex, confirming that the developed array can be used to accurately assess neural network dynamics in 3D space. Due to its greater experimental flexibility, the depth-customizable 3D electrode array developed in this study represents a versatile and cost-effective tool for assessing functional connectivity across the entire brain.
{"title":"Depth-Customizable 3D Electrode Array for Recording Functional Connectivity in the Brain","authors":"Minseok Kim, Sehwan Park, Haeyun Lee, Jimin Lee, Namsun Chou, Hyogeun Shin","doi":"10.1002/aelm.202500121","DOIUrl":"https://doi.org/10.1002/aelm.202500121","url":null,"abstract":"Understanding neural activity across multiple brain regions, especially in three dimensions, is essential for advancing neuroscience research. However, traditional 3D electrode arrays are often restricted to fixed depths, limiting their ability to probe complex brain structures. In this study, a depth-customizable, flexible 3D multi-shank electrode array that produces precise neural recordings at various brain depths is developed. Integrating 2D flexible electrode arrays with a modular supporting board allowed the insertion depth to be easily adjusted without re-fabrication. In vivo experiments produce successful recordings from the motor cortex, somatosensory cortex, and deep structures such as the substantia nigra. Functional connectivity analysis also reveals strong correlations between the substantia nigra and motor cortex, confirming that the developed array can be used to accurately assess neural network dynamics in 3D space. Due to its greater experimental flexibility, the depth-customizable 3D electrode array developed in this study represents a versatile and cost-effective tool for assessing functional connectivity across the entire brain.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hansang Sung, Jaemin Park, Siwoo Kim, Hyoin Song, Chanwoong Park, Jaein Park, Sucheol Ju, Heon Lee
Phase change memory is a leading candidate for storage class memory (SCM). Among various phase-change materials, Sb-Te-based materials, which have high-speed operation characteristics, are actively studied. Herein, a high-performance phase-change material is designed for doping tantalum (Ta) inside Sb2Te3 (ST). To optimize the Ta doping concentration, Ta-doped ST films with various Ta concentrations are fabricated using a sputtering process. The phase change characteristics of the fabricated Ta-doped ST films of various concentrations are analyzed, and the crystallographic, structural, and electrical effects of Ta doping inside Sb2Te3 are analyzed. Analysis of the Ta doping effect on Sb2Te3 shows that the crystallization temperature of the ST-based phase-change material increased and that grain growth is suppressed, thereby affecting electrical conductivity. Consequently, the optimized Ta doping concentration as a phase-change material is obtained. A phase change memory device is fabricated using optimized Ta(0.41):ST and confirmed to have fast set speed (≈15 ns) and low resistance drift characteristics. Through this study, the Ta doping effect of Sb2Te3 is extensively analyzed, and the optimal Ta doping concentration is demonstrated. It is confirmed that Ta-doped ST is a high-performance phase-change material applicable to next-generation SCM.
{"title":"Understanding the Effects of Ta Doping in Sb2Te3 for High-Performance Phase Change Memory","authors":"Hansang Sung, Jaemin Park, Siwoo Kim, Hyoin Song, Chanwoong Park, Jaein Park, Sucheol Ju, Heon Lee","doi":"10.1002/aelm.202400790","DOIUrl":"https://doi.org/10.1002/aelm.202400790","url":null,"abstract":"Phase change memory is a leading candidate for storage class memory (SCM). Among various phase-change materials, Sb-Te-based materials, which have high-speed operation characteristics, are actively studied. Herein, a high-performance phase-change material is designed for doping tantalum (Ta) inside Sb<sub>2</sub>Te<sub>3</sub> (ST). To optimize the Ta doping concentration, Ta-doped ST films with various Ta concentrations are fabricated using a sputtering process. The phase change characteristics of the fabricated Ta-doped ST films of various concentrations are analyzed, and the crystallographic, structural, and electrical effects of Ta doping inside Sb<sub>2</sub>Te<sub>3</sub> are analyzed. Analysis of the Ta doping effect on Sb<sub>2</sub>Te<sub>3</sub> shows that the crystallization temperature of the ST-based phase-change material increased and that grain growth is suppressed, thereby affecting electrical conductivity. Consequently, the optimized Ta doping concentration as a phase-change material is obtained. A phase change memory device is fabricated using optimized Ta(0.41):ST and confirmed to have fast set speed (≈15 ns) and low resistance drift characteristics. Through this study, the Ta doping effect of Sb<sub>2</sub>Te<sub>3</sub> is extensively analyzed, and the optimal Ta doping concentration is demonstrated. It is confirmed that Ta-doped ST is a high-performance phase-change material applicable to next-generation SCM.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"30 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chalcogenide phase change memory, a next-generation non-volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high-performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent contradiction between enhancing crystallization speed and bolstering amorphous stability. In this work, the formation of Ga─Ge bonds associated with Ga single doping are effectively addressed through the deliberate incorporation of GaSb co-doping. This strategic approach to bonding variety has significantly improved operational speed to a remarkable 8 ns, the crystallization temperature is elevated to 196 °C, and multilevel phase change performance is retained. First-principles calculations and material characterization is conducted to elucidate the underlying mechanisms responsible for the observed enhancements in both thermal stability and operation speed. This investigation provides valuable insights for optimizing the performance of phase change materials and addresses the pressing challenge of integrating phase change materials into a neuromorphic computing system.
{"title":"Enhancing Ga─Sb Bonds by GaSb Co-Doping Ge2Sb2Te5 for High Speed and Thermal Stability Phase Change Memory","authors":"Ke Gao, Ruizhe Zhao, Xin Li, Jingwei Cai, Hao Tong, Xiangshui Miao","doi":"10.1002/aelm.202500032","DOIUrl":"https://doi.org/10.1002/aelm.202500032","url":null,"abstract":"Chalcogenide phase change memory, a next-generation non-volatile memory technology, holds significant promise in neuromorphic computing, leading to an urgent demand for high-performance phase change materials. However, in the realm of phase change materials, there appears to be an inherent contradiction between enhancing crystallization speed and bolstering amorphous stability. In this work, the formation of Ga─Ge bonds associated with Ga single doping are effectively addressed through the deliberate incorporation of GaSb co-doping. This strategic approach to bonding variety has significantly improved operational speed to a remarkable 8 ns, the crystallization temperature is elevated to 196 °C, and multilevel phase change performance is retained. First-principles calculations and material characterization is conducted to elucidate the underlying mechanisms responsible for the observed enhancements in both thermal stability and operation speed. This investigation provides valuable insights for optimizing the performance of phase change materials and addresses the pressing challenge of integrating phase change materials into a neuromorphic computing system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143857568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lina Koschinski, Thomas Grap, Erkan Yilmaz, Marius Kleutgens, Simon Decke, Martin Kasavetov, Marie Jung, Alejandro Carnicer-Lombarte, George Malliaras, Andreas Offenhäusser, Viviana Rincón Montes
The development of high-density microelectrode arrays (MEAs) for large-scale brain recordings requires neural probes with reduced footprints to minimize tissue damage. One way to achieve this is by implementing dense electrode arrays with narrower feedline dimensions, though this increases susceptibility to capacitive coupling between electrical interconnects. To address this, this study explores the resolution limits for high-density flexible MEAs by optimizing the fabrication using optical contact lithography (OCL) and electron beam lithography (EBL). OCL enables metal feedlines with widths of 520 nm and interconnect spaces of 280 nm, while EBL allows the realization of 50 nm feedlines with 150 nm spaces on flexible parylene C substrates. Based on these techniques, we fabricate a flexible 64-channel intracortical implant with a miniaturized cross-section of only 50 × 6 or 70 × 6 µm2. In vivo validation in awake rats demonstrates that the fabricated, high-density flexible intracortical implants with submicron feedline resolution offer low-impedance electrodes and reduced crosstalk, enabling reliable neuronal recordings. These findings demonstrate the feasibility of miniaturizing flexible MEAs using a single-metal layer process, thereby reducing manufacturing complexity in high-density thin-film polymer-based neural interfaces.
要开发用于大规模脑记录的高密度微电极阵列（MEA），就必须减少神经探针的占地面积，以尽量减少对组织的损伤。实现这一目标的方法之一是采用馈线尺寸更窄的密集电极阵列，但这会增加电互连之间电容耦合的易感性。为了解决这个问题，本研究通过使用光学接触光刻（OCL）和电子束光刻（EBL）优化制造工艺，探索了高密度柔性 MEA 的分辨率极限。光学接触光刻可实现宽度为 520 nm 的金属馈线和 280 nm 的互连空间，而电子束光刻则可在柔性对二甲苯 C 基底上实现 50 nm 的馈线和 150 nm 的空间。在这些技术的基础上，我们制造出了柔性 64 通道皮质内植入体，其微型横截面仅为 50 × 6 或 70 × 6 µm2。在清醒大鼠体内进行的验证表明，制造出的高密度柔性皮层内植入体具有亚微米馈线分辨率，可提供低阻抗电极并减少串扰，从而实现可靠的神经元记录。这些发现证明了使用单金属层工艺实现柔性 MEA 微型化的可行性，从而降低了基于高密度薄膜聚合物的神经接口的制造复杂性。
{"title":"High-Density Flexible Neural Implants with Submicron Feedline Resolution","authors":"Lina Koschinski, Thomas Grap, Erkan Yilmaz, Marius Kleutgens, Simon Decke, Martin Kasavetov, Marie Jung, Alejandro Carnicer-Lombarte, George Malliaras, Andreas Offenhäusser, Viviana Rincón Montes","doi":"10.1002/aelm.202500088","DOIUrl":"https://doi.org/10.1002/aelm.202500088","url":null,"abstract":"The development of high-density microelectrode arrays (MEAs) for large-scale brain recordings requires neural probes with reduced footprints to minimize tissue damage. One way to achieve this is by implementing dense electrode arrays with narrower feedline dimensions, though this increases susceptibility to capacitive coupling between electrical interconnects. To address this, this study explores the resolution limits for high-density flexible MEAs by optimizing the fabrication using optical contact lithography (OCL) and electron beam lithography (EBL). OCL enables metal feedlines with widths of 520 nm and interconnect spaces of 280 nm, while EBL allows the realization of 50 nm feedlines with 150 nm spaces on flexible parylene C substrates. Based on these techniques, we fabricate a flexible 64-channel intracortical implant with a miniaturized cross-section of only 50 × 6 or 70 × 6 µm<sup>2</sup>. In vivo validation in awake rats demonstrates that the fabricated, high-density flexible intracortical implants with submicron feedline resolution offer low-impedance electrodes and reduced crosstalk, enabling reliable neuronal recordings. These findings demonstrate the feasibility of miniaturizing flexible MEAs using a single-metal layer process, thereby reducing manufacturing complexity in high-density thin-film polymer-based neural interfaces.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143862105","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stretchable conductors are the key components of stretchable and wearable electronics systems. Although the micro-structured cracking method is promising for realizing stretchable conductors, controlling the formation of cracks in stretchable conductors can be challenging. Simple control of cracks is required for obtaining various high-performance stretchable systems, including electrodes and interconnects. Here, a one-step crack-controlling method based on the simple and scalable spray-based carbon nanotube deposition approach is reported. The crack-controlled Au films exhibit high stretchability under up to 100% strain conditions, irrespective of the deposition conditions. The proposed one-step crack-control method is a universal technique for obtaining stretchable conductive materials.
{"title":"Crack-Controlled Stretchable Gold Conductive Electrode through One-Step Carbon Nanotube Spray Deposition","authors":"Masashi Miyakawa, Hiroshi Tsuji, Mitsuru Nakata","doi":"10.1002/aelm.202500033","DOIUrl":"https://doi.org/10.1002/aelm.202500033","url":null,"abstract":"Stretchable conductors are the key components of stretchable and wearable electronics systems. Although the micro-structured cracking method is promising for realizing stretchable conductors, controlling the formation of cracks in stretchable conductors can be challenging. Simple control of cracks is required for obtaining various high-performance stretchable systems, including electrodes and interconnects. Here, a one-step crack-controlling method based on the simple and scalable spray-based carbon nanotube deposition approach is reported. The crack-controlled Au films exhibit high stretchability under up to 100% strain conditions, irrespective of the deposition conditions. The proposed one-step crack-control method is a universal technique for obtaining stretchable conductive materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"91 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maximilian Spies, Simon Biberger, Fabian Eller, Eva M. Herzig, Anna Köhler
The solution‐based fabrication of reproducible, high‐quality lead iodide perovskite films demands a detailed understanding of the crystallization dynamics, which is mainly determined by the perovskite precursor solution and its processing conditions. A systematic in situ study is conducted during the critical phase before the nucleation in solution to elucidate the formation dynamics of lead iodide perovskite films. Using ultraviolet (UV) absorption spectroscopy during spin coating allows to track the evolution of iodoplumbate complexes present in the precursor solution. It is found that prior to film formation, a novel absorption signature at 3.15 eV arises. This is attributed to the emergence of a PbI2‐DMF solvated (PDS) phase. The amount of PDS phase is closely connected to the concentration of the solution layer during spin coating. It is also proposed that PDS clusters are a predecessor of crystalline perovskite phases and act as nucleation seeds in the precursor solution. In this way, this work provides insights into the early stages of perovskite crystallization.
{"title":"Solvated PbI2 Clusters Preceding the Crystallization of Lead Halide Perovskites–a UV/VIS In Situ Study","authors":"Maximilian Spies, Simon Biberger, Fabian Eller, Eva M. Herzig, Anna Köhler","doi":"10.1002/aelm.202500060","DOIUrl":"https://doi.org/10.1002/aelm.202500060","url":null,"abstract":"The solution‐based fabrication of reproducible, high‐quality lead iodide perovskite films demands a detailed understanding of the crystallization dynamics, which is mainly determined by the perovskite precursor solution and its processing conditions. A systematic in situ study is conducted during the critical phase before the nucleation in solution to elucidate the formation dynamics of lead iodide perovskite films. Using ultraviolet (UV) absorption spectroscopy during spin coating allows to track the evolution of iodoplumbate complexes present in the precursor solution. It is found that prior to film formation, a novel absorption signature at 3.15 eV arises. This is attributed to the emergence of a PbI<jats:sub>2</jats:sub>‐DMF solvated (PDS) phase. The amount of PDS phase is closely connected to the concentration of the solution layer during spin coating. It is also proposed that PDS clusters are a predecessor of crystalline perovskite phases and act as nucleation seeds in the precursor solution. In this way, this work provides insights into the early stages of perovskite crystallization.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"108 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The high contact resistance between MoS2 and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS2‐based transistor, featuring bilayer MoS2 connected to Cu‐intercalated bilayer MoS2 electrodes is theoretically designed. At 0.6 V, contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), nearing or even surpassing the 30 Ω µm quantum limit for single‐layer materials. This low resistance is attributed to the elimination of the tunneling barrier and the creation of ohmic contacts. Additionally, the small contact potential difference enables lower operating voltages. The intercalation design offers a novel approach to achieving low contact resistance in two‐dimentional electronic devices.
{"title":"Achieving Ultra‐Low Contact Resistance via Copper‐Intercalated Bilayer MoS2","authors":"Huan Wang, Xiaojie Liu, Hui Wang, Yin Wang, Haitao Yin","doi":"10.1002/aelm.202500100","DOIUrl":"https://doi.org/10.1002/aelm.202500100","url":null,"abstract":"The high contact resistance between MoS<jats:sub>2</jats:sub> and metals hinders its potential as an ideal solution for overcoming the short‐channel effect in silicon‐based FETs at sub‐3 nm scales. A MoS<jats:sub>2</jats:sub>‐based transistor, featuring bilayer MoS<jats:sub>2</jats:sub> connected to Cu‐intercalated bilayer MoS<jats:sub>2</jats:sub> electrodes is theoretically designed. At 0.6 V, contact resistance is 16.7 Ω µm (zigzag) and 30.0 Ω µm (armchair), nearing or even surpassing the 30 Ω µm quantum limit for single‐layer materials. This low resistance is attributed to the elimination of the tunneling barrier and the creation of ohmic contacts. Additionally, the small contact potential difference enables lower operating voltages. The intercalation design offers a novel approach to achieving low contact resistance in two‐dimentional electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti
Spintronic devices based on DWss and skyrmions have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. Based on the ferromagnetic multilayer spintronic devices, a magnetic field-gated and current-controlled spintronic Leaky Integrate-and-Fire (LIF) neuron with memtransistor properties is showcased. The memtransistor property allows for tuning firing characteristics through external magnetic fields and current pulses. A LIF neuron model is developed based on measured characteristics to integrate the device into system-level Spiking Neural Networks (SNNs). The scalability of the neuron device is confirmed with the micromagnetic simulations in a domain-wall magnetic tunnel junction device. When integrated into SNN and convolutional SNN frameworks, the device achieves classification precision above 96%. The study highlights the device's potential as a neuron in hardware SNN architecture-based neuromorphic computing applications, combining memtransistor properties of the device and high pattern classification accuracy. The results demonstrate a promising path toward developing energy-efficient and scalable neural networks.
{"title":"Spintronic Memtransistor Leaky Integrate and Fire Neuron for Spiking Neural Networks","authors":"Aijaz H. Lone, Meng Tang, Daniel N. Rahimi, Xuecui Zou, Dongxing Zheng, Hossein Fariborzi, Xixiang Zhang, Gianluca Setti","doi":"10.1002/aelm.202500091","DOIUrl":"https://doi.org/10.1002/aelm.202500091","url":null,"abstract":"Spintronic devices based on DWss and skyrmions have shown significant potential for applications in energy-efficient data storage and beyond CMOS computing architectures. Based on the ferromagnetic multilayer spintronic devices, a magnetic field-gated and current-controlled spintronic Leaky Integrate-and-Fire (LIF) neuron with memtransistor properties is showcased. The memtransistor property allows for tuning firing characteristics through external magnetic fields and current pulses. A LIF neuron model is developed based on measured characteristics to integrate the device into system-level Spiking Neural Networks (SNNs). The scalability of the neuron device is confirmed with the micromagnetic simulations in a domain-wall magnetic tunnel junction device. When integrated into SNN and convolutional SNN frameworks, the device achieves classification precision above 96%. The study highlights the device's potential as a neuron in hardware SNN architecture-based neuromorphic computing applications, combining memtransistor properties of the device and high pattern classification accuracy. The results demonstrate a promising path toward developing energy-efficient and scalable neural networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kai‐Ying Tien, Yen‐Yang Chen, Chia‐You Liu, Hsiang‐Shun Kao, Jiun‐Yun Li
Direct‐bandgap germanium‐tin (GeSn) has attracted much interest for high‐performance optoelectronic and electronic device applications. However, the transition from indirect bandgap to direct bandgap in GeSn epitaxial films and the effects on the electron transport properties are not fully understood. In this work, the electron populations and transport properties are investigated in high‐quality n‐GeSn films epitaxially grown using chemical vapor deposition under different strain conditions. Hall measurements are performed to characterize the effective density and mobility in the n‐GeSn films at temperatures from 300 to 4 K. Very high electron mobilities up to 6,200 and 1,500 cm2V−1s−1 are achieved in the strain‐relaxed Ge0.88Sn0.12 film at 50 and 300 K, respectively, due to the increased electron population in the direct Γ‐valley. The band structures are also simulated using the empirical pseudopotential method (EPM) to calculate the electron density in n‐GeSn films. The simulation results support the experimental data and strongly suggest that applying more tensile stress on the GeSn films or increasing the Sn fraction in the strain‐relaxed GeSn films is critical to achieving direct‐bandgap characteristics.
{"title":"Extremely High Electron Mobility in GeSn Epitaxial Films by Chemical Vapor Deposition","authors":"Kai‐Ying Tien, Yen‐Yang Chen, Chia‐You Liu, Hsiang‐Shun Kao, Jiun‐Yun Li","doi":"10.1002/aelm.202400925","DOIUrl":"https://doi.org/10.1002/aelm.202400925","url":null,"abstract":"Direct‐bandgap germanium‐tin (GeSn) has attracted much interest for high‐performance optoelectronic and electronic device applications. However, the transition from indirect bandgap to direct bandgap in GeSn epitaxial films and the effects on the electron transport properties are not fully understood. In this work, the electron populations and transport properties are investigated in high‐quality n‐GeSn films epitaxially grown using chemical vapor deposition under different strain conditions. Hall measurements are performed to characterize the effective density and mobility in the n‐GeSn films at temperatures from 300 to 4 K. Very high electron mobilities up to 6,200 and 1,500 cm<jats:sup>2</jats:sup>V<jats:sup>−1</jats:sup>s<jats:sup>−1</jats:sup> are achieved in the strain‐relaxed Ge<jats:sub>0.88</jats:sub>Sn<jats:sub>0.12</jats:sub> film at 50 and 300 K, respectively, due to the increased electron population in the direct Γ‐valley. The band structures are also simulated using the empirical pseudopotential method (EPM) to calculate the electron density in n‐GeSn films. The simulation results support the experimental data and strongly suggest that applying more tensile stress on the GeSn films or increasing the Sn fraction in the strain‐relaxed GeSn films is critical to achieving direct‐bandgap characteristics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143853464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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