Veronika Šedajová, Jiří Štulík, Petr Jakubec, Michal Otyepka
Temperature monitoring and regulation are essential in various environments, including modern industry and living and storage spaces. The growing demand for temperature sensors calls for affordable, efficient, interference-resistant, and eco-friendly solutions. The challenge of humidity interference in constructing temperature sensors often leads to compromising on the dynamic sensor properties in particular due to the need for encapsulation. To this end, this study introduces a temperature sensor leveraging a carefully designed graphene derivative to mitigate the humidity interference. The material, synthesize through scalable fluorographene chemistry with benzylamine, is optimized in order to enhance its properties, which led to achieving peak efficiency with a minimal humidity impact. The sensor demonstrated full functionality across a temperature range from 10 to 90 °C, with a temperature coefficient of resistivity 8.63 × 10−3 K−1, which is more than twice as high as that of conventional platinum thermometers. Remarkably, the sensor exhibited only a 2% change in resistance when exposed to relative humidity in the range of 20 to 70%. Notably, the sensor continues to give a consistent performance even after six months, which proved its stability. The presented device holds promise for evolving into a fully printed, cost-effective and reliable next-generation temperature sensors.
{"title":"Mitigation of Humidity Interference by Graphene Derivatives for Efficient Temperature Sensors without Encapsulation","authors":"Veronika Šedajová, Jiří Štulík, Petr Jakubec, Michal Otyepka","doi":"10.1002/aelm.202400052","DOIUrl":"https://doi.org/10.1002/aelm.202400052","url":null,"abstract":"Temperature monitoring and regulation are essential in various environments, including modern industry and living and storage spaces. The growing demand for temperature sensors calls for affordable, efficient, interference-resistant, and eco-friendly solutions. The challenge of humidity interference in constructing temperature sensors often leads to compromising on the dynamic sensor properties in particular due to the need for encapsulation. To this end, this study introduces a temperature sensor leveraging a carefully designed graphene derivative to mitigate the humidity interference. The material, synthesize through scalable fluorographene chemistry with benzylamine, is optimized in order to enhance its properties, which led to achieving peak efficiency with a minimal humidity impact. The sensor demonstrated full functionality across a temperature range from 10 to 90 °C, with a temperature coefficient of resistivity 8.63 × 10<sup>−3</sup> K<sup>−1</sup>, which is more than twice as high as that of conventional platinum thermometers. Remarkably, the sensor exhibited only a 2% change in resistance when exposed to relative humidity in the range of 20 to 70%. Notably, the sensor continues to give a consistent performance even after six months, which proved its stability. The presented device holds promise for evolving into a fully printed, cost-effective and reliable next-generation temperature sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xue-Qing Zhan, Han Chen, Zhi-Ling Hong, Yong-Ping Leng, Chang-Chang Zhu, Chang-Bo Zhang, Zhong-Xiang Tang, Qian Chen, Ning Ma, Fang-Chang Tsai
Hydrogels that possess both self-healing capabilities in tissue engineering and mechanical properties play a pivotal role in advancing flexible sensing and wearable bioelectronic devices technologies. The primary challenge in practical applications revolves around the delicate equilibrium between mechanical properties and self-regeneration capabilities. Herein, the utilization of conjugated carbonyl compound PI-COF (Polyimide-Covalent organic framework) is proposed as reinforcing phases to interact with iron ions, thereby preparing PAA-based double network hydrogel with high cross-linking density. Through comprehensive component analysis, it has been determined that the existence of metal coordination bonds, hydrogen bonds along with π–π conjugate system imparts (PAA-2DC)-Fe3+/PEDOT: PSS hydrogel excellent self-healing performance (3rd, 196.2%), elongation (1312%) and tensile strength (71 kPa). Additionally, the hydrogel exhibits remarkable conductivity (σ = 0.5 S m−1), strain sensing sensitivity (GF = 9.3), self-adhesive properties and demonstrating its ability to differentiate between materials of various sizes and possesses antibacterial properties. These exceptional attributes highlight the potential of the hydrogel in tissue engineering and flexible sensing, simultaneously providing novel research ideas and theoretical basis.
{"title":"Conjugated Carbonyl Compound-Enhanced Hydrogels for Tactile Recognition","authors":"Xue-Qing Zhan, Han Chen, Zhi-Ling Hong, Yong-Ping Leng, Chang-Chang Zhu, Chang-Bo Zhang, Zhong-Xiang Tang, Qian Chen, Ning Ma, Fang-Chang Tsai","doi":"10.1002/aelm.202400214","DOIUrl":"https://doi.org/10.1002/aelm.202400214","url":null,"abstract":"Hydrogels that possess both self-healing capabilities in tissue engineering and mechanical properties play a pivotal role in advancing flexible sensing and wearable bioelectronic devices technologies. The primary challenge in practical applications revolves around the delicate equilibrium between mechanical properties and self-regeneration capabilities. Herein, the utilization of conjugated carbonyl compound PI-COF (Polyimide-Covalent organic framework) is proposed as reinforcing phases to interact with iron ions, thereby preparing PAA-based double network hydrogel with high cross-linking density. Through comprehensive component analysis, it has been determined that the existence of metal coordination bonds, hydrogen bonds along with π–π conjugate system imparts (PAA-2DC)-Fe<sup>3+</sup>/PEDOT: PSS hydrogel excellent self-healing performance (3rd, 196.2%), elongation (1312%) and tensile strength (71 kPa). Additionally, the hydrogel exhibits remarkable conductivity (σ = 0.5 S m<sup>−1</sup>), strain sensing sensitivity (GF = 9.3), self-adhesive properties and demonstrating its ability to differentiate between materials of various sizes and possesses antibacterial properties. These exceptional attributes highlight the potential of the hydrogel in tissue engineering and flexible sensing, simultaneously providing novel research ideas and theoretical basis.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Maksym Myronov, Pedram Jahandar, Simone Rossi, Kevin Sewell, Felipe Murphy‐Armando, Fabio Pezzoli
Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge1‐xSnx) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results reveal unusual impact of dopants manifesting via a pronounced reduction of Sn content in the epilayer, accompanied by an enhancement of the growth rate, due to increasing p‐type doping concentration. Furthermore, the opposite behavior for n‐type doping is observed, resulting in a less pronounced increase of Sn concentration and no effect on growth rate. Nevertheless, a very high density of electrically active holes up to ≈4 × 1020 cm−3 is obtained in p‐type doped Ge1‐xSnx epilayer resulting in the lowest resistivity of 0.15 mΩ cm among all in situ doped epitaxial and strained group‐IV semiconductors. Also, the metal‐to‐insulator transition in Ge1‐xSnx is experimentally demonstrated for doping levels above 1 × 1017 cm−3, which is substantially lower than in any group‐IV semiconductor, and theoretically predict it to be as low as ≈1 × 1017 cm−3. The findings enabled by the doping regime explored in this work can open novel prospects to engineer low resistivity contacts and charge current injection in applications covering next‐generation transistors, qubits, diodes, electrically driven light sources, sensors and hybrid quantum devices.
通过化学气相沉积法在标准硅（001）衬底上生长出的压缩应变锗锡（Ge1-xSnx）半导体外延层中进行了高效的 p 型和 n 型原位掺杂。材料表征结果揭示了掺杂剂的不寻常影响，表现为随着 p 型掺杂浓度的增加，外延层中 Sn 的含量明显降低，同时生长速度加快。此外，对于 n 型掺杂物，观察到了相反的行为，即 Sn 浓度增加不明显，但对生长速度没有影响。然而，在掺杂 p 型的 Ge1-xSnx 外延层中，电活性空穴的密度非常高，可达 ≈4 × 1020 cm-3，因此在所有原位掺杂的外延和应变 IV 族半导体中，电阻率最低，仅为 0.15 mΩ cm。此外，实验证明，Ge1-xSnx 中的金属-绝缘体转变掺杂水平高于 1 × 1017 cm-3，大大低于任何 IV 族半导体，理论预测其掺杂水平可低至≈1 × 1017 cm-3。这项工作中探索的掺杂机制所带来的发现，为在下一代晶体管、量子比特、二极管、电驱动光源、传感器和混合量子器件等应用中设计低电阻率接触和电荷电流注入开辟了新的前景。
{"title":"Efficient In Situ Doping of Strained Germanium Tin Epilayers at Unusually Low Temperature","authors":"Maksym Myronov, Pedram Jahandar, Simone Rossi, Kevin Sewell, Felipe Murphy‐Armando, Fabio Pezzoli","doi":"10.1002/aelm.202300811","DOIUrl":"https://doi.org/10.1002/aelm.202300811","url":null,"abstract":"Efficient p‐ and n‐type in situ doping of compressively strained germanium tin (Ge<jats:sub>1‐x</jats:sub>Sn<jats:sub>x</jats:sub>) semiconductor epilayers, grown by chemical vapor deposition on a standard Si(001) substrate, is demonstrated. Materials characterization results reveal unusual impact of dopants manifesting via a pronounced reduction of Sn content in the epilayer, accompanied by an enhancement of the growth rate, due to increasing p‐type doping concentration. Furthermore, the opposite behavior for n‐type doping is observed, resulting in a less pronounced increase of Sn concentration and no effect on growth rate. Nevertheless, a very high density of electrically active holes up to ≈4 × 10<jats:sup>20</jats:sup> cm<jats:sup>−3</jats:sup> is obtained in p‐type doped Ge<jats:sub>1‐x</jats:sub>Sn<jats:sub>x</jats:sub> epilayer resulting in the lowest resistivity of 0.15 mΩ cm among all in situ doped epitaxial and strained group‐IV semiconductors. Also, the metal‐to‐insulator transition in Ge<jats:sub>1‐x</jats:sub>Sn<jats:sub>x</jats:sub> is experimentally demonstrated for doping levels above 1 × 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>, which is substantially lower than in any group‐IV semiconductor, and theoretically predict it to be as low as ≈1 × 10<jats:sup>17</jats:sup> cm<jats:sup>−3</jats:sup>. The findings enabled by the doping regime explored in this work can open novel prospects to engineer low resistivity contacts and charge current injection in applications covering next‐generation transistors, qubits, diodes, electrically driven light sources, sensors and hybrid quantum devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141495838","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero
Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI3 perovskite (800 nm) films with structure FTO/MAPbI3/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (106), endurance (>2 × 103 times) and a record retention time (>105 s). The I–V curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI2 in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI3/buffer/Ag memristor, supported by numerical simulations.
{"title":"Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor","authors":"José Carlos Pérez-Martínez, Diego Martín-Martín, Belén Arredondo, Beatriz Romero","doi":"10.1002/aelm.202400067","DOIUrl":"https://doi.org/10.1002/aelm.202400067","url":null,"abstract":"Halide perovskites (HPs) are promising materials for memristor devices because of their unique characteristics. In this study, nonvolatile resistive switching memory devices based on thick MAPbI<sub>3</sub> perovskite (800 nm) films with structure FTO/MAPbI<sub>3</sub>/polymethyl methacrylate (PMMA)/Ag are presented. Reproducible and reliable bipolar switching characteristics are demonstrated with an ultra-low operating voltage (−0.1 V), high ON/OFF ratio (10<sup>6</sup>), endurance (>2 × 10<sup>3</sup> times) and a record retention time (>10<sup>5 </sup>s). The <i>I–V</i> curve of the first cycle exhibits self-formed conductive filaments. These are attributed to the presence of metallic Pb resulting from an excess of PbI<sub>2</sub> in the perovskite film. The subsequent activation process involves the formation of conductive filaments, consisting of either iodide vacancies or migrated charged metals. Numerical simulations are then carried out to understand the nature of these conductive filaments and the role of the internal electric field in the migration of iodide ions, iodide vacancies, and Ag cations. Finally, an exhaustive model is proposed that explains the set and reset processes governing the first voltage cycle and the steady state, at different voltage ranges. In summary, this work offers a novel and thorough perspective of the complete resistive switching (RS) behavior in a MAPbI<sub>3</sub>/buffer/Ag memristor, supported by numerical simulations.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141496149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubham Tanwar, Ruben Millan-Solsona, Sara Ruiz-Molina, Marta Mas-Torrent, Adrica Kyndiah, Gabriel Gomila
Electrolyte-gated organic transistors (EGOTs) leveraging organic semiconductors' electronic and ionic transport characteristics are the key enablers for many biosensing and bioelectronic applications that can selectively sense, record, and monitor different biological and biochemical processes at the nanoscale and translate them into macroscopic electrical signals. Understanding such transduction mechanisms requires multiscale characterization tools to comprehensively probe local electrical properties and link them with device behavior across various bias points. Here, an automated scanning dielectric microscopy toolbox is demonstrated that performs operando in-liquid scanning dielectric microscopy measurements on functional EGOTs and carries out extensive data analysis to unravel the evolution of local electrical properties in minute detail. This paper emphasizes critical experimental considerations permitting standardized, accurate, and reproducible data acquisition. The developed approach is validated with EGOTs based on blends of organic small molecule semiconductor and insulating polymer that work as accumulation-mode field-effect transistors. Furthermore, the degradation of local electrical characteristics at high gate voltages is probed, which is apparently driven by the destruction of local crystalline order due to undesirable electrochemical swelling of the organic semiconducting material near the source electrode edge. The developed approach paves the way for systematic probing of EGOT-based technologies for targeted optimization and fundamental understanding.
{"title":"Automated Scanning Dielectric Microscopy Toolbox for Operando Nanoscale Electrical Characterization of Electrolyte-Gated Organic Transistors","authors":"Shubham Tanwar, Ruben Millan-Solsona, Sara Ruiz-Molina, Marta Mas-Torrent, Adrica Kyndiah, Gabriel Gomila","doi":"10.1002/aelm.202400222","DOIUrl":"https://doi.org/10.1002/aelm.202400222","url":null,"abstract":"Electrolyte-gated organic transistors (EGOTs) leveraging organic semiconductors' electronic and ionic transport characteristics are the key enablers for many biosensing and bioelectronic applications that can selectively sense, record, and monitor different biological and biochemical processes at the nanoscale and translate them into macroscopic electrical signals. Understanding such transduction mechanisms requires multiscale characterization tools to comprehensively probe local electrical properties and link them with device behavior across various bias points. Here, an automated scanning dielectric microscopy toolbox is demonstrated that performs operando in-liquid scanning dielectric microscopy measurements on functional EGOTs and carries out extensive data analysis to unravel the evolution of local electrical properties in minute detail. This paper emphasizes critical experimental considerations permitting standardized, accurate, and reproducible data acquisition. The developed approach is validated with EGOTs based on blends of organic small molecule semiconductor and insulating polymer that work as accumulation-mode field-effect transistors. Furthermore, the degradation of local electrical characteristics at high gate voltages is probed, which is apparently driven by the destruction of local crystalline order due to undesirable electrochemical swelling of the organic semiconducting material near the source electrode edge. The developed approach paves the way for systematic probing of EGOT-based technologies for targeted optimization and fundamental understanding.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko
Active sensing matrices play a pivotal role in various electronic devices, including optical and X-ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin-film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium-zinc oxide thin-film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large-scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active-matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO-based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high-performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low-voltage, high-frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU-8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO2/Al2O3/HfO2 sandwich structures are employed as high-k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16-stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active-matrix electronic systems.
{"title":"Flexible IGZO TFT Technology for Shift Register Drivers","authors":"Bin Bao, Dmitriy D. Karnaushenko, Jiawang Xu, Shouguo Wang, Vineeth Kumar Bandari, Oliver G. Schmidt, Daniil Karnaushenko","doi":"10.1002/aelm.202400036","DOIUrl":"https://doi.org/10.1002/aelm.202400036","url":null,"abstract":"Active sensing matrices play a pivotal role in various electronic devices, including optical and X-ray imaging arrays, electronic skins, and artificial tactile arrays, among others. These matrices function through a thin-film active switching mechanism, allowing for the scanning of rows and columns by external circuitry to read the sensory signals of individual pixels. Recently, indium–gallium-zinc oxide thin-film transistors (IGZO TFTs) have emerged as highly promising technology in the realm of flexible electronics. They enable the large-scale integration of functional circuits on flexible substrates. Shift registers are commonly employed as peripheral scanning circuits to sequentially address active-matrix arrays. To enhance system compactness and minimize external electrical connections, it is imperative to seamlessly integrate shift registers within the active matrices. However, contemporary flexible IGZO-based shift registers suffer from high operating voltages and low frequencies, which constrain their applicability in high-performance flexible sensors and displays. In response to this challenge, a breakthrough is presented in the form of low-voltage, high-frequency bootstrap shift registers implemented with flexible IGZO technology. The approach involves utilizing SU-8 buffered polyimide (PI) polymer foils as substrates. These foils boast an exceptional level of surface smoothness, significantly increasing the yield and performance of electronic components, including vias, IGZO TFTs, and capacitors used in the shift register circuitry. Additionally, HfO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> sandwich structures are employed as high-k dielectric layers to reduce the operational voltage. Thanks to the innovative circuit design and optimized fabrication methods, the 16-stage shift register can operate at just 1.8 V with a frequency of 15 kHz. This breakthrough promises to have a profound impact on a wide range of applications for driving flexible active-matrix electronic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141489785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang
Post-oxidation annealing in oxygen (O2) ambient can improve the quality of the SiO2/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O2)), this work focuses on the dependence of the annealing effect on P(O2) in a wide range from 0.01 Pa to 101 kPa for SiO2/SiC stack. In order to minimize the C-related defects generated during SiC oxidation, the SiO2/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O2) is beneficial to improve the interface quality, and high P(O2) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O2) is proposed to quantitatively characterize the dependence of the annealing effect on P(O2), which shows that the filling amount of V[O] is proportional to P(O2)n (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O2 annealing.
在氧气（O2）环境中进行氧化后退火可以在不引入外来原子的情况下提高二氧化硅/碳化硅叠层的质量。为了揭示不同氧分压（P(O2)）下的退火机理，这项工作重点研究了 SiO2/SiC 堆在 0.01 Pa 到 101 kPa 的宽范围内退火效果对 P(O2) 的依赖性。为了尽量减少碳化硅氧化过程中产生的与 C 有关的缺陷，SiO2/SiC 叠层是通过氧化碳化硅外延层上的沉积硅形成的。退火样品的电气特性表明，低 P(O2) 有利于改善界面质量，而高 P(O2) 则有利于改善氧化层质量。此外，飞行时间二次离子质谱和 X 射线光电子能谱分析表明，氧空位（V[O]）的分布和填充与电学结果一致。最后，提出了一个描述 V[O] 填充量与 P(O2) 的模型，以定量表征退火效应对 P(O2) 的依赖性，结果表明 V[O] 的填充量与 P(O2)n 成正比（n∼0.065）。该模型为通过 O2 退火提高 SiC MOS 的质量提供了理论支持。
{"title":"Study on the Oxygen Partial Pressure Dependent Annealing Effect for SiO2/SiC Stack","authors":"Qian Zhang, Nannan You, Jiayi Wang, Yang Xu, Kuo Zhang, Shengkai Wang","doi":"10.1002/aelm.202400040","DOIUrl":"https://doi.org/10.1002/aelm.202400040","url":null,"abstract":"Post-oxidation annealing in oxygen (O<sub>2</sub>) ambient can improve the quality of the SiO<sub>2</sub>/SiC stack without introducing foreign atoms. In order to reveal the annealing mechanism at different oxygen partial pressures (P(O<sub>2</sub>)), this work focuses on the dependence of the annealing effect on P(O<sub>2</sub>) in a wide range from 0.01 Pa to 101 kPa for SiO<sub>2</sub>/SiC stack. In order to minimize the C-related defects generated during SiC oxidation, the SiO<sub>2</sub>/SiC stacks are formed by oxidizing the deposited Si on the SiC epitaxial layer. The electrical characteristics of the annealed samples show that low P(O<sub>2</sub>) is beneficial to improve the interface quality, and high P(O<sub>2</sub>) is beneficial to improve the oxide layer quality. In addition, time of flight secondary ion mass spectrometry and X-ray photoelectron spectroscopy analysis shows that the distribution and filling of oxygen vacancies (V[O]) are consistent with the electrical results. Finally, a model describing V[O] filling amount with P(O<sub>2</sub>) is proposed to quantitatively characterize the dependence of the annealing effect on P(O<sub>2</sub>), which shows that the filling amount of V[O] is proportional to <i>P</i>(<i>O</i><sub>2</sub>)<sup><i>n</i></sup> (n∼0.065). This model provides theoretical support for improving the quality of SiC MOS by O<sub>2</sub> annealing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141463520","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Akibul Islam, Eric Nicholson, Nima Barri, Momoko Onodera, Danny Starkov, Peter Serles, Shuo He, Boran Kumral, Ali Zavabeti, Haleh Shahsa, Teng Cui, Guorui Wang, Tomoki Machida, C.V. Singh, Tobin Filleter
Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS2 and WS2, while p-type 2D materials such as WSe2 remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi-layer WSe2 is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe2 is demonstrated. The research offers valuable mechanistic insights into understanding how WSe2's electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe2/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe2. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p-type Metal–Oxide–Semiconductor) devices.
通过机械应变调节二维材料的电学特性主要集中在 MoS2 和 WS2 等 n 型二维材料上，而 WSe2 等 p 型二维材料的研究相对较少。本文研究了受控机械应变对单层和双层 WSe2 电子传输特性的影响。通过耦合原子力显微镜（AFM）纳米压痕技术和导电原子力显微镜，证明了微调 WSe2 电子能带结构的能力。这项研究为了解 WSe2 的电子特性如何对机械应变做出反应提供了宝贵的机理见解，而机械应变是开发柔性光电子器件的关键前提。研究还观察到，在高压下，AFM尖端/单层WSe2/金属基底结从肖特基接触转变为欧姆接触，这归因于从基底到WSe2的大量电荷注入。这些发现对于在薄而灵活的 PMOS（p 型金属-氧化物-半导体）器件中设计高效的金属/半导体接触具有重要意义。
{"title":"Strain Driven Electrical Bandgap Tuning of Atomically Thin WSe2","authors":"Md Akibul Islam, Eric Nicholson, Nima Barri, Momoko Onodera, Danny Starkov, Peter Serles, Shuo He, Boran Kumral, Ali Zavabeti, Haleh Shahsa, Teng Cui, Guorui Wang, Tomoki Machida, C.V. Singh, Tobin Filleter","doi":"10.1002/aelm.202400225","DOIUrl":"https://doi.org/10.1002/aelm.202400225","url":null,"abstract":"Tuning electrical properties of 2D materials through mechanical strain has predominantly focused on n-type 2D materials like MoS<sub>2</sub> and WS<sub>2</sub>, while p-type 2D materials such as WSe<sub>2</sub> remain relatively unexplored. Here, the impact of controlled mechanical strain on the electron transport characteristics of both mono and bi-layer WSe<sub>2</sub> is studied. Through coupling atomic force microscopy (AFM) nanoindentation techniques and conductive AFM, the ability to finely tune the electronic band structure of WSe<sub>2</sub> is demonstrated. The research offers valuable mechanistic insights into understanding how WSe<sub>2</sub>'s electronic properties respond to mechanical strain, a critical prerequisite for the development of flexible photoelectronic devices. It is also observed that under high pressure, the AFM tip/monolayer WSe<sub>2</sub>/metal substrate junction transitions from Schottky to Ohmic contact, attributed to significant charge injection from the substrate to the WSe<sub>2</sub>. These findings are significant for designing efficient metal/semiconductor contact in thin and flexible PMOS (p-type Metal–Oxide–Semiconductor) devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141463704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Reza Ghazanfari, Simon Steinberg, Konrad Siemensmeyer, Johannes C. Vrijmoed, Mirko Tallu, Stefanie Dehnen, Günther Thiele
The novel potassium sulfido cobaltate, K2[Co3S4] is introduced, with 25% vacancies of the cobalt positions within a layered anionic sublattice. The impedance and dielectric investigations indicate a remarkable ionic conductivity of 21.4 mS cm−1 at room temperature, which is in the range of highest ever reported values for potassium-ions, as well as a high electrical permittivity of 2650 at 1 kHz, respectively. Magnetometry results indicate an antiferromagnetic structure with giant intrinsic exchange bias fields of 0.432 and 0.161 T at 3 and 20 K respectively, potentially induced by a combination of the interfacial effect of combined magnetic anionic and nonmagnetic cationic sublattices, as well as partial spin canting. The stability of the exchange bias behavior is confirmed by a training effect of less than 18% upon 10 hysteresis cycles. The semiconductivity of the material is determined, both experimentally and theoretically, with a bandgap energy of 1.68 eV. The findings render this material as a promising candidate for both, active electrode material in potassium-ion batteries, and for spintronic applications.
新型硫代钴酸钾 K2[Co3S4]在层状阴离子亚晶格中的钴位有 25% 的空位。阻抗和介电研究表明，该物质在室温下的离子电导率高达 21.4 mS cm-1，是迄今所报道的钾离子电导率的最高值，在 1 kHz 时的电导率也高达 2650。磁力测量结果表明，在 3 K 和 20 K 时，钾离子具有反铁磁性结构，其内在交换偏置场分别为 0.432 T 和 0.161 T，这可能是磁性阴离子亚晶格和非磁性阳离子亚晶格的界面效应以及部分自旋悬臂效应共同作用的结果。交换偏压行为的稳定性通过 10 次磁滞循环后小于 18% 的训练效应得到了证实。通过实验和理论测定，该材料的半导体带隙能为 1.68 eV。这些发现使这种材料成为钾离子电池活性电极材料和自旋电子应用的理想候选材料。
{"title":"Insights into a Defective Potassium Sulfido Cobaltate: Giant Magnetic Exchange Bias, Ionic Conductivity, and Electrical Permittivity","authors":"M. Reza Ghazanfari, Simon Steinberg, Konrad Siemensmeyer, Johannes C. Vrijmoed, Mirko Tallu, Stefanie Dehnen, Günther Thiele","doi":"10.1002/aelm.202400038","DOIUrl":"https://doi.org/10.1002/aelm.202400038","url":null,"abstract":"The novel potassium sulfido cobaltate, K<sub>2</sub>[Co<sub>3</sub>S<sub>4</sub>] is introduced, with 25% vacancies of the cobalt positions within a layered anionic sublattice. The impedance and dielectric investigations indicate a remarkable ionic conductivity of 21.4 mS cm<sup>−1</sup> at room temperature, which is in the range of highest ever reported values for potassium-ions, as well as a high electrical permittivity of 2650 at 1 kHz, respectively. Magnetometry results indicate an antiferromagnetic structure with giant intrinsic exchange bias fields of 0.432 and 0.161 T at 3 and 20 K respectively, potentially induced by a combination of the interfacial effect of combined magnetic anionic and nonmagnetic cationic sublattices, as well as partial spin canting. The stability of the exchange bias behavior is confirmed by a training effect of less than 18% upon 10 hysteresis cycles. The semiconductivity of the material is determined, both experimentally and theoretically, with a bandgap energy of 1.68 eV. The findings render this material as a promising candidate for both, active electrode material in potassium-ion batteries, and for spintronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141463659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Silver nanowires (AgNW) are prospective for the fabrication of flexible transparent conductive coatings. The main challenge is to ensure low sheet resistance of AgNW coatings at flexible substrates. Herein, a simple low-temperature post-treatment method is proposed for improving the conductivity and adhesion of AgNW coatings which is based on the deposition of distilled water (DI) with a small amount of dissolved polyvinyl alcohol (PVA). Capillary forces cause a decrease in the sheet resistance of AgNW coatings while the presence of PVA significantly improves the adhesion of nanowires to the flexible polyethylene terephthalate (PET) substrates. As a result, coatings with a transparency of 91% and a sheet resistance of 20 Ω sq‒1 are fabricated. The storage time of coatings in air is increased due to the presence of a thin layer of PVA on AgNW. After 90 days, the sheet resistance of post-treated AgNW coatings is increased by 11 times, while the sheet resistance of untreated coatings is increased by more than 3000 times. The obtained AgNW coatings are utilized as flexible transparent heaters.
{"title":"Improvement of Conductivity and Adhesion of AgNW Flexible Transparent Conductive Coatings by the Capillary Forces Effect and Polyvinyl Alcohol","authors":"Marat Kaikanov, Alshyn Abduvalov","doi":"10.1002/aelm.202300876","DOIUrl":"https://doi.org/10.1002/aelm.202300876","url":null,"abstract":"Silver nanowires (AgNW) are prospective for the fabrication of flexible transparent conductive coatings. The main challenge is to ensure low sheet resistance of AgNW coatings at flexible substrates. Herein, a simple low-temperature post-treatment method is proposed for improving the conductivity and adhesion of AgNW coatings which is based on the deposition of distilled water (DI) with a small amount of dissolved polyvinyl alcohol (PVA). Capillary forces cause a decrease in the sheet resistance of AgNW coatings while the presence of PVA significantly improves the adhesion of nanowires to the flexible polyethylene terephthalate (PET) substrates. As a result, coatings with a transparency of 91% and a sheet resistance of 20 Ω sq<sup>‒1</sup> are fabricated. The storage time of coatings in air is increased due to the presence of a thin layer of PVA on AgNW. After 90 days, the sheet resistance of post-treated AgNW coatings is increased by 11 times, while the sheet resistance of untreated coatings is increased by more than 3000 times. The obtained AgNW coatings are utilized as flexible transparent heaters.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141463560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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