Wojciech Wieczorek, Tomasz Mazur, Weronika Górka-Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński
Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.
{"title":"Ultrathin High-Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface-Grafted Poly(methacrylic acid) Matrix","authors":"Wojciech Wieczorek, Tomasz Mazur, Weronika Górka-Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński","doi":"10.1002/aelm.202400772","DOIUrl":"https://doi.org/10.1002/aelm.202400772","url":null,"abstract":"Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Minye Yang, Lukang Wang, Zhilu Ye, Qi Zhong, Baolong Jian, Xiaohui Zhang, Şahin K. Özdemir, Ming Liu
Exceptional point degeneracies, which are spectral singularities of non‐Hermitian systems, have been widely utilized for building optical, mechanical, or electrical sensing systems with much larger responses than those utilizing Hermitian degeneracies. However, such systems suffer from enhanced noise, which negates the enhanced response and thus does not provide any improvement in signal‐to‐noise ratio. Recently, the coherent perfect absorber (CPA)‐laser, which also utilizes non‐Hermitian singularity, has been used in sensing systems resulting in better noise robustness and enhanced responsivity. Nonetheless, CPA‐laser (CPAL) implementation requires all system parameters to be immutable, which hinders progress toward their practical use for sensing purposes. Here, a tunable electronic CPA‐laser is reported that overcomes these obstacles providing ultrahigh sensitivity as validated in the experiments for monitoring arterial pressure and respiration. This CPAL sensing scheme utilizes inductive coupling between gain and loss sub‐components and thereby the whole system can be decomposed into an active reader and a passive sensor, which enables better tunability and performance compared to previously reported CPAL systems. Moreover, the proposed CPAL system exhibits better performance compared to exceptional point‐based systems having a similar circuit structure. This research paves the way for exploring electronic CPAL for sensing applications and may have a profound impact on the next‐generation, ultrasensitive electromagnetic sensing system.
{"title":"Electronic CPA‐Laser Having Enhanced Sensitivity and Tunability","authors":"Minye Yang, Lukang Wang, Zhilu Ye, Qi Zhong, Baolong Jian, Xiaohui Zhang, Şahin K. Özdemir, Ming Liu","doi":"10.1002/aelm.202400722","DOIUrl":"https://doi.org/10.1002/aelm.202400722","url":null,"abstract":"Exceptional point degeneracies, which are spectral singularities of non‐Hermitian systems, have been widely utilized for building optical, mechanical, or electrical sensing systems with much larger responses than those utilizing Hermitian degeneracies. However, such systems suffer from enhanced noise, which negates the enhanced response and thus does not provide any improvement in signal‐to‐noise ratio. Recently, the coherent perfect absorber (CPA)‐laser, which also utilizes non‐Hermitian singularity, has been used in sensing systems resulting in better noise robustness and enhanced responsivity. Nonetheless, CPA‐laser (CPAL) implementation requires all system parameters to be immutable, which hinders progress toward their practical use for sensing purposes. Here, a tunable electronic CPA‐laser is reported that overcomes these obstacles providing ultrahigh sensitivity as validated in the experiments for monitoring arterial pressure and respiration. This CPAL sensing scheme utilizes inductive coupling between gain and loss sub‐components and thereby the whole system can be decomposed into an active reader and a passive sensor, which enables better tunability and performance compared to previously reported CPAL systems. Moreover, the proposed CPAL system exhibits better performance compared to exceptional point‐based systems having a similar circuit structure. This research paves the way for exploring electronic CPAL for sensing applications and may have a profound impact on the next‐generation, ultrasensitive electromagnetic sensing system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142985989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider
Semiconductor-superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realized by in-situ deposition of an Al superconducting layer. Here a hybrid material is presented, based on an InAs 2D electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. The inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors is addressed by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.
{"title":"Development of a Nb-Based Semiconductor-Superconductor Hybrid 2DEG Platform","authors":"Sjoerd Telkamp, Tommaso Antonelli, Clemens Todt, Manuel Hinderling, Marco Coraiola, Daniel Haxell, Sofieke C. ten Kate, Deividas Sabonis, Peng Zeng, Rüdiger Schott, Erik Cheah, Christian Reichl, Fabrizio Nichele, Filip Krizek, Werner Wegscheider","doi":"10.1002/aelm.202400687","DOIUrl":"https://doi.org/10.1002/aelm.202400687","url":null,"abstract":"Semiconductor-superconductor hybrid materials are used as a platform to realize Andreev bound states, which hold great promise for quantum applications. These states require transparent interfaces between the semiconductor and superconductor, which are typically realized by in-situ deposition of an Al superconducting layer. Here a hybrid material is presented, based on an InAs 2D electron gas (2DEG) combined with in-situ deposited Nb and NbTi superconductors, which offer a larger operating range in temperature and magnetic field due to their larger superconducting gap. The inherent difficulty associated with the formation of an amorphous interface between III-V semiconductors and Nb-based superconductors is addressed by introducing a 7 nm Al interlayer. The Al interlayer provides an epitaxial connection between an in-situ magnetron sputtered Nb or NbTi thin film and a shallow InAs 2DEG. This metal-to-metal epitaxy is achieved by optimization of the material stack and results in an induced superconducting gap of approximately 1 meV, determined from transport measurements of superconductor-semiconductor Josephson junctions. This induced gap is approximately five times larger than the values reported for Al-based hybrid materials and indicates the formation of highly-transparent interfaces that are required in high-quality hybrid material platforms.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska-Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld
In this work, solution shearing approach is used to fabricate sustainable, de-ionized water based 15 nm aluminum oxide (AlOx) thin films employing a combination of low-temperature thermal annealing and deep UV exposure techniques. Their electrical performance is evaluated for memristive technology, demonstrating bipolar resistive switching and a stable ON/OFF ratio of ≈102. Devices exhibit endurance for 100 cycles and retention exceeding 40 h. Moreover, the device showcases eight voltage-regulated resistive switching states, equivalent to 4 bits. All multilevel states exhibit a significant increase in the memory window and stable retention for 3 h. This study illustrates that the resistive switching results from the conductive filament development is facilitated by oxygen vacancies. Charge conduction modeling of I–V characteristics reveals that the mechanism is dominated by space charge-limited conduction (SCLC) during filament formation, followed by Ohmic conduction. A negative differential resistance (NDR) effect occurs due to the sudden rupture of the filament when the polarity is reversed. The voltage-regulated multilevel behavior can be attributed to the enhancement of the pre-existing oxygen vacancy conductive filament or the formation of multiple filaments. Overall, the bilayer AlOx thin film demonstrates significant potential for application in multibit-level memory storage devices.
{"title":"Solution Shearing of Sustainable Aluminum Oxide Thin Films for Compliance-Free, Voltage-Regulated Multi-Bit Memristors","authors":"Preetam Dacha, Anju Kumari R, Darius Pohl, Angelika Wrzesińska-Lashkova, Alexander Tahn, Bernd Rellinghaus, Yana Vaynzof, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202400698","DOIUrl":"https://doi.org/10.1002/aelm.202400698","url":null,"abstract":"In this work, solution shearing approach is used to fabricate sustainable, de-ionized water based 15 nm aluminum oxide (AlO<i><sub>x</sub></i>) thin films employing a combination of low-temperature thermal annealing and deep UV exposure techniques. Their electrical performance is evaluated for memristive technology, demonstrating bipolar resistive switching and a stable ON/OFF ratio of ≈10<sup>2</sup>. Devices exhibit endurance for 100 cycles and retention exceeding 40 h. Moreover, the device showcases eight voltage-regulated resistive switching states, equivalent to 4 bits. All multilevel states exhibit a significant increase in the memory window and stable retention for 3 h. This study illustrates that the resistive switching results from the conductive filament development is facilitated by oxygen vacancies. Charge conduction modeling of <i>I</i>–<i>V</i> characteristics reveals that the mechanism is dominated by space charge-limited conduction (SCLC) during filament formation, followed by Ohmic conduction. A negative differential resistance (NDR) effect occurs due to the sudden rupture of the filament when the polarity is reversed. The voltage-regulated multilevel behavior can be attributed to the enhancement of the pre-existing oxygen vacancy conductive filament or the formation of multiple filaments. Overall, the bilayer AlO<i><sub>x</sub></i> thin film demonstrates significant potential for application in multibit-level memory storage devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Małgorzata Skorupa, Ethan Cao, Adrian Barylski, Sara Shakibania, Sandra Pluczyk-Małek, Zuzanna Siwy, Katarzyna Krukiewicz
In the pursuit of energy storage devices offering high power density, rapid charge and discharge rates, a layer-by-layer deposition approach is shown to improve the capacitive properties of conducting polymer-based devices. This work describes the synthesis and characterization of a composite material based on poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-ethylenedioxypyrrole) (PEDOP) for supercapacitor applications. PEDOT and PEDOP are sequentially electropolymerized using cyclic voltammetry to form bilayer structures, overcoming challenges associated with copolymerization. The evaluation of electrochemical performance of the PEDOT/PEDOP composite reveals superior areal capacitance (42.2 ± 2.8 mF cm−2 at the scan rate of 5 mV s−1) outperforming both homopolymers by up to 30%. Microscopic and spectroscopic surface analysis confirm the uniform coating of PEDOT/PEDOP and enhanced surface roughness resulting from the formation of 3D nanostructures, contributing to improved electrochemical performance. Further electrochemical impedance spectroscopic analysis demonstrates low charge transfer resistance (25 ± 8 Ω) and high energy density with respect to the area of the electrode (3.53 ± 0.3 µWh cm−2 at 55 µW cm−2), making PEDOT/PEDOP composite a promising material for high-performance supercapacitors.
{"title":"Layer-By-Layer Approach to Improve the Capacitance of Conducting Polymer Films","authors":"Małgorzata Skorupa, Ethan Cao, Adrian Barylski, Sara Shakibania, Sandra Pluczyk-Małek, Zuzanna Siwy, Katarzyna Krukiewicz","doi":"10.1002/aelm.202400761","DOIUrl":"https://doi.org/10.1002/aelm.202400761","url":null,"abstract":"In the pursuit of energy storage devices offering high power density, rapid charge and discharge rates, a layer-by-layer deposition approach is shown to improve the capacitive properties of conducting polymer-based devices. This work describes the synthesis and characterization of a composite material based on poly(3,4-ethylenedioxythiophene) (PEDOT) and poly(3,4-ethylenedioxypyrrole) (PEDOP) for supercapacitor applications. PEDOT and PEDOP are sequentially electropolymerized using cyclic voltammetry to form bilayer structures, overcoming challenges associated with copolymerization. The evaluation of electrochemical performance of the PEDOT/PEDOP composite reveals superior areal capacitance (42.2 ± 2.8 mF cm<sup>−2</sup> at the scan rate of 5 mV s<sup>−1</sup>) outperforming both homopolymers by up to 30%. Microscopic and spectroscopic surface analysis confirm the uniform coating of PEDOT/PEDOP and enhanced surface roughness resulting from the formation of 3D nanostructures, contributing to improved electrochemical performance. Further electrochemical impedance spectroscopic analysis demonstrates low charge transfer resistance (25 ± 8 Ω) and high energy density with respect to the area of the electrode (3.53 ± 0.3 µWh cm<sup>−2</sup> at 55 µW cm<sup>−2</sup>), making PEDOT/PEDOP composite a promising material for high-performance supercapacitors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"5 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi
Accumulated charges at the interfaces of organic light-emitting diodes (OLEDs) often induce exciton quenching and lead to device degradation. This work delves into the correlations of the interface charge accumulation and degradation properties of tris(8-quinolinolato)aluminum (Alq3)-based OLEDs. The interface accumulated charge density is modified by spontaneous orientation polarization (SOP) induced in the hole transport layer (HTL) by means of dipolar doping, where N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) or tris(4-carbazoyl-9-ylphenyl) amine (TCTA) is employed as a hole transport material and 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-bensimidazole) (TPBi) as a dipolar dopant. It is confirmed that NPB cation acts as an exciton quencher, but TCTA cation does not, depending on the spectral overlap of Alq3 emission and the absorption of the respective cations. On the other hand, the TCTA devices degrade much faster than the NPB devices. Moreover, the device lifetime is similar or even shorter for the doped devices despite less interface charge density. These results suggest that holes accumulated at the interface between the hole transport material and Alq3 due to SOP are not mainly involved in the degradation mechanism. Furthermore, it is found that the charge traps generated due to degradation do not act as exciton quenchers, suggesting that they rather act as nonradiative recombination centers.
{"title":"Degradation Properties of Organic Light-Emitting Diodes with Modified Interface Charge Density via Dipolar Doping Studied by Displacement Current Measurement","authors":"Mihiro Takeda, Alexander Hofmann, Wolfgang Brütting, Yutaka Noguchi","doi":"10.1002/aelm.202400788","DOIUrl":"https://doi.org/10.1002/aelm.202400788","url":null,"abstract":"Accumulated charges at the interfaces of organic light-emitting diodes (OLEDs) often induce exciton quenching and lead to device degradation. This work delves into the correlations of the interface charge accumulation and degradation properties of tris(8-quinolinolato)aluminum (Alq<sub>3</sub>)-based OLEDs. The interface accumulated charge density is modified by spontaneous orientation polarization (SOP) induced in the hole transport layer (HTL) by means of dipolar doping, where N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′-diamine (NPB) or tris(4-carbazoyl-9-ylphenyl) amine (TCTA) is employed as a hole transport material and 2,2′,2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-bensimidazole) (TPBi) as a dipolar dopant. It is confirmed that NPB cation acts as an exciton quencher, but TCTA cation does not, depending on the spectral overlap of Alq<sub>3</sub> emission and the absorption of the respective cations. On the other hand, the TCTA devices degrade much faster than the NPB devices. Moreover, the device lifetime is similar or even shorter for the doped devices despite less interface charge density. These results suggest that holes accumulated at the interface between the hole transport material and Alq<sub>3</sub> due to SOP are not mainly involved in the degradation mechanism. Furthermore, it is found that the charge traps generated due to degradation do not act as exciton quenchers, suggesting that they rather act as nonradiative recombination centers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"75 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Angus Hawkey, Xabier Rodríguez-Martínez, Sebastian Lindenthal, Moritz C. F. Jansen, Reverant Crispin, Jana Zaumseil
Networks of semiconducting single-walled carbon nanotubes (SWNTs) are a promising material for thermoelectric energy harvesting due to their mechanical flexibility, solution processability, high Seebeck coefficients and high electrical conductivities after chemical p- or n-doping. Here, we demonstrate that proton-coupled electron transfer (PCET) with benzoquinone (BQ) as the oxidant and lithium bis(trifluoromethylsulfonyl)imide (Li[TFSI]) for electrolyte counterions is a highly suitable method for p-doping of polymer-sorted semiconducting SWNT networks. The achieved doping levels, as determined from absorption bleaching, depend directly on both the pH of the aqueous doping solutions and the bandgap (i.e., diameter) of the nanotubes within the network. Fast screening of different nanotube networks under various doping conditions is enabled by a high-throughput setup for thermoelectric measurements of five samples in parallel. For small-bandgap SWNTs, PCET-doping is sufficient to reach the maximum thermoelectric power factors, which are equal to those obtained by conventional methods. In contrast to other doping methods, the electrical conductivity of PCET-doped SWNTs remains stable over at least 5 days in air. These results confirm PCET to be a suitable approach for more environmentally friendly and stable doping of semiconducting SWNTs as promising thermoelectric materials.
{"title":"Bandgap-Dependent Doping of Semiconducting Carbon Nanotube Networks by Proton-Coupled Electron Transfer for Stable Thermoelectrics","authors":"Angus Hawkey, Xabier Rodríguez-Martínez, Sebastian Lindenthal, Moritz C. F. Jansen, Reverant Crispin, Jana Zaumseil","doi":"10.1002/aelm.202400817","DOIUrl":"https://doi.org/10.1002/aelm.202400817","url":null,"abstract":"Networks of semiconducting single-walled carbon nanotubes (SWNTs) are a promising material for thermoelectric energy harvesting due to their mechanical flexibility, solution processability, high Seebeck coefficients and high electrical conductivities after chemical p- or n-doping. Here, we demonstrate that proton-coupled electron transfer (PCET) with benzoquinone (BQ) as the oxidant and lithium bis(trifluoromethylsulfonyl)imide (Li[TFSI]) for electrolyte counterions is a highly suitable method for p-doping of polymer-sorted semiconducting SWNT networks. The achieved doping levels, as determined from absorption bleaching, depend directly on both the pH of the aqueous doping solutions and the bandgap (i.e., diameter) of the nanotubes within the network. Fast screening of different nanotube networks under various doping conditions is enabled by a high-throughput setup for thermoelectric measurements of five samples in parallel. For small-bandgap SWNTs, PCET-doping is sufficient to reach the maximum thermoelectric power factors, which are equal to those obtained by conventional methods. In contrast to other doping methods, the electrical conductivity of PCET-doped SWNTs remains stable over at least 5 days in air. These results confirm PCET to be a suitable approach for more environmentally friendly and stable doping of semiconducting SWNTs as promising thermoelectric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As hydrogel research progresses, hydrogels are becoming essential tools in bioelectronics and biotechnology. This review explores the diverse range of natural and synthetic gel materials tailored for specific bioelectronic applications, with a focus on their integration with electronic components to create responsive, multifunctional systems. The role of Artificial Intelligence (AI) in advancing gel design and functionality from optimizing material properties to enabling precise, predictive modeling is investigated. Furthermore, recent innovations that harness the synergy between hydrogels, electronics, and AI are discussed, emphasizing the potential of these materials to drive future advances in biomedical technologies. AI-driven approaches are transforming the development of hydrogels for applications in wound healing, biosensing, drug delivery, and tissue engineering.
{"title":"Computational and AI-Driven Design of Hydrogels for Bioelectronic Applications","authors":"Rebekah Finster, Prashant Sankaran, Eloise Bihar","doi":"10.1002/aelm.202400763","DOIUrl":"https://doi.org/10.1002/aelm.202400763","url":null,"abstract":"As hydrogel research progresses, hydrogels are becoming essential tools in bioelectronics and biotechnology. This review explores the diverse range of natural and synthetic gel materials tailored for specific bioelectronic applications, with a focus on their integration with electronic components to create responsive, multifunctional systems. The role of Artificial Intelligence (AI) in advancing gel design and functionality from optimizing material properties to enabling precise, predictive modeling is investigated. Furthermore, recent innovations that harness the synergy between hydrogels, electronics, and AI are discussed, emphasizing the potential of these materials to drive future advances in biomedical technologies. AI-driven approaches are transforming the development of hydrogels for applications in wound healing, biosensing, drug delivery, and tissue engineering.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142981912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Braydon Segars, Kyle Rosenberg, Sarita Shrestha, Joshua J. Maraj, Stephen A. Sarles, Eric Freeman
Brain-inspired (or neuromorphic) computing circumvents costly bottlenecks in conventional Von Neumann architectures by collocating memory and processing. This is accomplished through dynamic material architectures, strengthening or weakening internal conduction pathways similar to synaptic connections within the brain. A new class of neuromorphic materials approximates synaptic interfaces using lipid membranes assembled via the droplet interface bilayer (DIB) technique. These DIB membranes have been studied as novel memristors or memcapacitors owing to the soft, reconfigurable nature of both the lipid membrane geometry and the embedded ion-conducting channels. In this work, a biomolecular approach to neuromorphic materials is expanded from model synapses to a charge-integrating model neuron. In these serial membrane networks, it is possible to create distributions of voltage-sensitive gates capable of trapping ionic charge. This trapped charge creates transmembrane potential differences that drive changes in the system's net capacitance through electrowetting, providing a synaptic weight that changes in response to the history and timing of input signals. This fundamental change from interfacial memory (dimensions of the membrane) to internal memory (charge trapped within the droplets) provides a functional plasticity capable of multiple weights, longer-term retention roughly an order of magnitude greater than memory stored in the membranes alone, and programming-erasure.
{"title":"Neuron-Inspired Biomolecular Memcapacitors Formed Using Droplet Interface Bilayer Networks","authors":"Braydon Segars, Kyle Rosenberg, Sarita Shrestha, Joshua J. Maraj, Stephen A. Sarles, Eric Freeman","doi":"10.1002/aelm.202400644","DOIUrl":"https://doi.org/10.1002/aelm.202400644","url":null,"abstract":"Brain-inspired (or neuromorphic) computing circumvents costly bottlenecks in conventional Von Neumann architectures by collocating memory and processing. This is accomplished through dynamic material architectures, strengthening or weakening internal conduction pathways similar to synaptic connections within the brain. A new class of neuromorphic materials approximates synaptic interfaces using lipid membranes assembled via the droplet interface bilayer (DIB) technique. These DIB membranes have been studied as novel memristors or memcapacitors owing to the soft, reconfigurable nature of both the lipid membrane geometry and the embedded ion-conducting channels. In this work, a biomolecular approach to neuromorphic materials is expanded from <i>model synapses</i> to a <i>charge-integrating model neuron</i>. In these serial membrane networks, it is possible to create distributions of voltage-sensitive gates capable of trapping ionic charge. This trapped charge creates transmembrane potential differences that drive changes in the system's net capacitance through electrowetting, providing a synaptic weight that changes in response to the history and timing of input signals. This fundamental change from interfacial memory (dimensions of the membrane) to internal memory (charge trapped within the droplets) provides a functional plasticity capable of multiple weights, longer-term retention roughly an order of magnitude greater than memory stored in the membranes alone, and programming-erasure.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"41 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142975535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The biological photoreceptors in the retina convert light information into spikes, inspiring the emergence of artificial photoelectric spiking neurons. However, due to the lack of biocompatible and biodegradable characteristics, artificial photoelectric spiking neurons based on threshold switching (TS) devices are not available for bio‐integrated optical medical diagnostics and neuromorphic computing. Here, an artificial photoelectric spiking neuron integrated with a physically transient memristor and photodetector for UV perception is proposed. The transient memristor with a MgO:Mg resistive layer implemented by the co‐sputtering process of MgO and Mg targets shows highly robust TS performance, while the ZnO‐based transient photodetector can selectively detect UV light at power densities below 10 mW cm−2. More interestingly, the frequency of the firing spikes generated by artificial photoelectric spiking neuron increases with the enhancement of UV light intensity. In addition, the recognition accuracy of UV information extracted from the surrounding environment reaches ≈99.8% by spiking neural network consisting of photoelectric spiking neuron when the object that blended into the background are not easily detected. This work demonstrates that the functions of the biological photoreceptors may be truly mimicked by artificial photoelectric spiking neuron with transiency, expanding its application in optical disease diagnosis and implantable visual neuromorphic computing.
{"title":"A Transient Photoelectric Spiking Neuron Based on a Highly Robust MgO Composite Threshold Switching Memristor for Selective UV Perception","authors":"Yaxiong Cao, Rui Wang, Saisai Wang, Tonglong Zeng, Wanlin Zhang, Jing Sun, Xiaohua Ma, Hong Wang, Yue Hao","doi":"10.1002/aelm.202400678","DOIUrl":"https://doi.org/10.1002/aelm.202400678","url":null,"abstract":"The biological photoreceptors in the retina convert light information into spikes, inspiring the emergence of artificial photoelectric spiking neurons. However, due to the lack of biocompatible and biodegradable characteristics, artificial photoelectric spiking neurons based on threshold switching (TS) devices are not available for bio‐integrated optical medical diagnostics and neuromorphic computing. Here, an artificial photoelectric spiking neuron integrated with a physically transient memristor and photodetector for UV perception is proposed. The transient memristor with a MgO:Mg resistive layer implemented by the co‐sputtering process of MgO and Mg targets shows highly robust TS performance, while the ZnO‐based transient photodetector can selectively detect UV light at power densities below 10 mW cm<jats:sup>−2</jats:sup>. More interestingly, the frequency of the firing spikes generated by artificial photoelectric spiking neuron increases with the enhancement of UV light intensity. In addition, the recognition accuracy of UV information extracted from the surrounding environment reaches ≈99.8% by spiking neural network consisting of photoelectric spiking neuron when the object that blended into the background are not easily detected. This work demonstrates that the functions of the biological photoreceptors may be truly mimicked by artificial photoelectric spiking neuron with transiency, expanding its application in optical disease diagnosis and implantable visual neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142968278","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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