Federico Prescimone, Wejdan S. AlGhamdi, Giulia Baroni, Marco Natali, Aiman Fakieh, Hendrik Faber, Margherita Bolognesi, Thomas D. Anthopoulos, Stefano Toffanin
Within multijunction organic and hybrid photodetectors (PDs), organic and hybrid phototransistors (HPTs) hold promises for high sensitivity (S) and specific detectivity (D*). However, it is difficult to achieve a trade-off between a large sensing area, a fast response, and a high D*. Here, we propose an alternative phototransistor concept relying on a geometrically engineered tri-channel (Tr-iC) architecture with a 4-mm2 large sensing area, applied to a multilayer HPT whose active region is comprised of an inorganic In2O3/ZnO n-type field-effect channel and solution-processed organic bulk heterojunction (BHJ) or hybrid perovskite light-sensing layer. The resulting HPTs combine a responsivity (R) up to 105 A/W, thanks to the efficient charge transport (at the bottom In2O3/ZnO layer) and a D* estimated at 1015Jones, which allows to measure low light power densities down to 10 nW cm−2. These figures of merit are coupled to a fast response (risetime <10 ms and falltime of ≈100 ms for illumination, in the µW/cm2 range), which is comparable to the time-response of organic PDs in a diode architecture. The experimental data are supported by a comprehensive device modeling, which helps highlighting the peculiar advantages of the proposed large area, Tr-iC, and multilayer HPT architecture.
{"title":"A Large Area Hybrid Phototransistor Platform with Large Detectivity and Fast Response to NIR Light","authors":"Federico Prescimone, Wejdan S. AlGhamdi, Giulia Baroni, Marco Natali, Aiman Fakieh, Hendrik Faber, Margherita Bolognesi, Thomas D. Anthopoulos, Stefano Toffanin","doi":"10.1002/aelm.202400762","DOIUrl":"https://doi.org/10.1002/aelm.202400762","url":null,"abstract":"Within multijunction organic and hybrid photodetectors (PDs), organic and hybrid phototransistors (HPTs) hold promises for high sensitivity (S) and specific detectivity (D*). However, it is difficult to achieve a trade-off between a large sensing area, a fast response, and a high D*. Here, we propose an alternative phototransistor concept relying on a geometrically engineered tri-channel (Tr-iC) architecture with a 4-mm<sup>2</sup> large sensing area, applied to a multilayer HPT whose active region is comprised of an inorganic In<sub>2</sub>O<sub>3</sub>/ZnO n-type field-effect channel and solution-processed organic bulk heterojunction (BHJ) or hybrid perovskite light-sensing layer. The resulting HPTs combine a responsivity (R) up to 10<sup>5</sup> A/W, thanks to the efficient charge transport (at the bottom In<sub>2</sub>O<sub>3</sub>/ZnO layer) and a D* estimated at 10<sup>15</sup>Jones, which allows to measure low light power densities down to 10 nW cm<sup>−2</sup>. These figures of merit are coupled to a fast response (risetime <10 ms and falltime of ≈100 ms for illumination, in the µW/cm<sup>2</sup> range), which is comparable to the time-response of organic PDs in a diode architecture. The experimental data are supported by a comprehensive device modeling, which helps highlighting the peculiar advantages of the proposed large area, Tr-iC, and multilayer HPT architecture.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"8 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143672691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Exploring and comprehending magnetocaloric materials with spin reorientation (SR) phase transition is of vital importance for practical applications of magnetocaloric effect (MCE). Herein, this study presents a systematic study on the magnetic properties, heat transport properties, magnetic structure, and electronic structure of NdNi compound. NdNi is observed to undergo an SR phase transition and a ferromagnetic (FM) to paramagnetic (PM) phase transition successively with increasing temperature. Neutron powder diffraction (NPD) experiment reveals that the SR phase transition involves the rotation of Nd magnetic moment from a-axis to the direction with a deviation angle θ in ac-plane upon temperature decreasing, whereas Ni does not contribute to the total magnetic moment. These theoretical investigations based on the first-principles calculations and the second-order perturbation theory further confirm that the SR phase transition is closely associated with magnetocrystalline anisotropy energy, which is mainly contributed by Nd atoms. The presence of SR phase transition makes NdNi possess a wide refrigerant temperature span, thus merits it as a magnetic cooling material for applications with various temperature ranges. This work provides profound insights for further exploring and comprehending multiple-phase-transition magnetocaloric materials.
{"title":"Insight Into the Spin Reorientation Phase Transition in the Magnetocaloric NdNi Compound","authors":"Yawei Gao, Xinqi Zheng, Hui Wu, Juping Xu, He Huang, Dingsong Wang, Hao Liu, Shanshan Zhen, Yang Pan, Lei Xi, Guyue Wang, Zixiao Zhang, Guangrui Zhang, Anxu Ma, Zhe Chen, Dan Liu, Zhaojun Mo, Jiawang Xu, Wen Yin, Shouguo Wang, Baogen Shen","doi":"10.1002/aelm.202500119","DOIUrl":"https://doi.org/10.1002/aelm.202500119","url":null,"abstract":"Exploring and comprehending magnetocaloric materials with spin reorientation (SR) phase transition is of vital importance for practical applications of magnetocaloric effect (MCE). Herein, this study presents a systematic study on the magnetic properties, heat transport properties, magnetic structure, and electronic structure of NdNi compound. NdNi is observed to undergo an SR phase transition and a ferromagnetic (FM) to paramagnetic (PM) phase transition successively with increasing temperature. Neutron powder diffraction (NPD) experiment reveals that the SR phase transition involves the rotation of Nd magnetic moment from a-axis to the direction with a deviation angle θ in ac-plane upon temperature decreasing, whereas Ni does not contribute to the total magnetic moment. These theoretical investigations based on the first-principles calculations and the second-order perturbation theory further confirm that the SR phase transition is closely associated with magnetocrystalline anisotropy energy, which is mainly contributed by Nd atoms. The presence of SR phase transition makes NdNi possess a wide refrigerant temperature span, thus merits it as a magnetic cooling material for applications with various temperature ranges. This work provides profound insights for further exploring and comprehending multiple-phase-transition magnetocaloric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lijun Huang, Aleksey Kudryavtsev, Olga Moskalyuk, Ruixuan Zhang, Nasir Ali, Muhammad Bilal Ghori, Huizhu Hu, Ekaterina Gushina, Anna Stepashkina
Polymer composites with carbon nanofillers are promising for electromagnetic shielding, with performance influenced by filler geometry, orientation, and temperature. Spherical carbon black enhances scattering, while anisotropic carbon nanotubes (CNTs) exhibit directional wave propagation and polarization. CNT orientation significantly affects the shielding efficiency, with the perpendicular alignment outperforming the parallel alignment. Temperature-dependent CNT polarization further underscores the need for thermal considerations in material design.
{"title":"Optimizing Polymer Composites for Effective Electromagnetic Shielding: The Role of Carbon Filler Properties and Temperature","authors":"Lijun Huang, Aleksey Kudryavtsev, Olga Moskalyuk, Ruixuan Zhang, Nasir Ali, Muhammad Bilal Ghori, Huizhu Hu, Ekaterina Gushina, Anna Stepashkina","doi":"10.1002/aelm.202400928","DOIUrl":"https://doi.org/10.1002/aelm.202400928","url":null,"abstract":"Polymer composites with carbon nanofillers are promising for electromagnetic shielding, with performance influenced by filler geometry, orientation, and temperature. Spherical carbon black enhances scattering, while anisotropic carbon nanotubes (CNTs) exhibit directional wave propagation and polarization. CNT orientation significantly affects the shielding efficiency, with the perpendicular alignment outperforming the parallel alignment. Temperature-dependent CNT polarization further underscores the need for thermal considerations in material design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"32 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666694","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Younghoon Lim, Taehun Kim, Jaesik Eom, Onsik Harm, Junsung Byeon, Jungmoon Lim, Juwon Lee, Sangyeon Pak, SeungNam Cha
Neuromorphic visual systems mimicking biological retina functionalities are emerging as next-generation retinomorphic devices for consolidating sensing and memorizing systems. In particular, monolayer MoS2 has been proposed as a promising material for retinomorphic devices due to their unique electrical and optical properties. Despite the advantages of MoS2 material, several limitations, such as PPC (persistent photoconductivity) or additional operating voltage, restrict the optimization of neuromorphic visual systems in MoS2-based retinomorphic devices. Herein, the two-terminal retinomorphic devices are reported featuring a tailored gating voltage range near zero and enhanced synaptic plasticity by providing another recombination route to suppress the PPC effect. Furthermore, pattern recognition results confirm that the retinomorphic devices effectively emulate the functions of the retina with a low device-to-device variation. This remarkable performance of MoS2-based retinomorphic devices utilizing a functionalized substrate presents proposes an important pathway toward designing 2D materials-based synaptic devices.
{"title":"Two-Terminal MoS2-Based Retinomorphic Devices with Enhanced Synaptic Plasticity","authors":"Younghoon Lim, Taehun Kim, Jaesik Eom, Onsik Harm, Junsung Byeon, Jungmoon Lim, Juwon Lee, Sangyeon Pak, SeungNam Cha","doi":"10.1002/aelm.202400878","DOIUrl":"https://doi.org/10.1002/aelm.202400878","url":null,"abstract":"Neuromorphic visual systems mimicking biological retina functionalities are emerging as next-generation retinomorphic devices for consolidating sensing and memorizing systems. In particular, monolayer MoS<sub>2</sub> has been proposed as a promising material for retinomorphic devices due to their unique electrical and optical properties. Despite the advantages of MoS<sub>2</sub> material, several limitations, such as PPC (persistent photoconductivity) or additional operating voltage, restrict the optimization of neuromorphic visual systems in MoS<sub>2</sub>-based retinomorphic devices. Herein, the two-terminal retinomorphic devices are reported featuring a tailored gating voltage range near zero and enhanced synaptic plasticity by providing another recombination route to suppress the PPC effect. Furthermore, pattern recognition results confirm that the retinomorphic devices effectively emulate the functions of the retina with a low device-to-device variation. This remarkable performance of MoS<sub>2</sub>-based retinomorphic devices utilizing a functionalized substrate presents proposes an important pathway toward designing 2D materials-based synaptic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"56 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dielectric materials with high relative permittivity, i.e., high-k dielectrics, are in great demand for application as gate dielectric for the development of field-effect transistors operating at low voltages. However, a high-k gate dielectric does not always produce favorable outcomes, particularly in field-effect transistors based on organic semiconductors (OFETs). Contradicting experimental results have been reported, with some studies showing compromised OFET performance, while others demonstrate enhanced performance when using high-k gate dielectrics. Currently, no comprehensive or systematic study has been conducted to compare or integrate these conflicting results. As a result, the relative validity and broader implications of these conflicting findings remain uncertain. Here, the effects of high-k gate dielectrics with systematically varied dielectric constants on OFET performance are systematically investigated and the inconsistencies in the literature are resolved. By employing a highly miscible high-k polymer blend system, it is demonstrated that both positive and negative correlations of dielectric constant and field-effect mobility exist in different semiconductor systems. These results provide a strategy to rationally design organic transistors that incorporate high-k dielectrics, without compromising the field-effect mobility due to the broadening of the density of states.
{"title":"Resolving the High-k Paradox in Organic Field-Effect Transistors Through Rational Dielectric Design","authors":"Beomjin Jeong, Kamal Asadi","doi":"10.1002/aelm.202500040","DOIUrl":"https://doi.org/10.1002/aelm.202500040","url":null,"abstract":"Dielectric materials with high relative permittivity, i.e., high-k dielectrics, are in great demand for application as gate dielectric for the development of field-effect transistors operating at low voltages. However, a high-k gate dielectric does not always produce favorable outcomes, particularly in field-effect transistors based on organic semiconductors (OFETs). Contradicting experimental results have been reported, with some studies showing compromised OFET performance, while others demonstrate enhanced performance when using high-k gate dielectrics. Currently, no comprehensive or systematic study has been conducted to compare or integrate these conflicting results. As a result, the relative validity and broader implications of these conflicting findings remain uncertain. Here, the effects of high-k gate dielectrics with systematically varied dielectric constants on OFET performance are systematically investigated and the inconsistencies in the literature are resolved. By employing a highly miscible high-k polymer blend system, it is demonstrated that both positive and negative correlations of dielectric constant and field-effect mobility exist in different semiconductor systems. These results provide a strategy to rationally design organic transistors that incorporate high-k dielectrics, without compromising the field-effect mobility due to the broadening of the density of states.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"56 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul
The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state-of-the-art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optical material limitation, which leaves ample room for further development. Gallium oxide (Ga2O3) has surfaced as the preferred material for next-generation device fabrication, as it has a wider bandgap (≈4.5–5.7 eV), an estimated twofold greater breakdown field strength of 8 MV cm−1, and a higher Baliga's figure of merit(BFOM) (>3000) than SiC and GaN, therefore pushing the limit. In this review, the properties of gallium oxide, several methods for epitaxial growth, its energy band, and its broad spectrum of applications are discussed. Metals for achieving different types of contact and the influence of interfacial reactions are additionally assessed. Furthermore, defects and challenges such as p-type doping, integration with heterostructures, the formation of superlattices, and thermal management associated with the use of this material are also reviewed.
{"title":"Advances in Gallium Oxide: Properties, Applications, and Future Prospects","authors":"Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul","doi":"10.1002/aelm.202400690","DOIUrl":"https://doi.org/10.1002/aelm.202400690","url":null,"abstract":"The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state-of-the-art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optical material limitation, which leaves ample room for further development. Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) has surfaced as the preferred material for next-generation device fabrication, as it has a wider bandgap (≈4.5–5.7 eV), an estimated twofold greater breakdown field strength of 8 MV cm<sup>−1</sup>, and a higher Baliga's figure of merit(BFOM) (>3000) than SiC and GaN, therefore pushing the limit. In this review, the properties of gallium oxide, several methods for epitaxial growth, its energy band, and its broad spectrum of applications are discussed. Metals for achieving different types of contact and the influence of interfacial reactions are additionally assessed. Furthermore, defects and challenges such as p-type doping, integration with heterostructures, the formation of superlattices, and thermal management associated with the use of this material are also reviewed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ramin Karimi Azari, Luan Pereira Camargo, José Ramón Herrera Garza, Liam Collins, Wan− Yu Tsai, Lariel Chagas da Silva Neres, Patrick Dang, Martin Schwellberger Barbosa, Clara Santato
Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO3-based ion-gated transistor () in [EMIM][TFSI] and a 0.1 mol L−1 LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li+ brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO3 IGTs exhibit spike amplitude-dependent plasticity (SADP), spike number-dependent plasticity (SNDP), spike duration-dependent plasticity (SDDP), frequency-dependent plasticity (FDP), and paired-pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real-time processing, which are essential for applications in artificial intelligence (AI).
{"title":"Emulation of Synaptic Plasticity in WO3-Based Ion-Gated Transistors","authors":"Ramin Karimi Azari, Luan Pereira Camargo, José Ramón Herrera Garza, Liam Collins, Wan− Yu Tsai, Lariel Chagas da Silva Neres, Patrick Dang, Martin Schwellberger Barbosa, Clara Santato","doi":"10.1002/aelm.202400807","DOIUrl":"https://doi.org/10.1002/aelm.202400807","url":null,"abstract":"Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO<sub>3</sub>-based ion-gated transistor () in [EMIM][TFSI] and a 0.1 mol L<sup>−1</sup> LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li<sup>+</sup> brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO<sub>3</sub> IGTs exhibit spike amplitude-dependent plasticity (SADP), spike number-dependent plasticity (SNDP), spike duration-dependent plasticity (SDDP), frequency-dependent plasticity (FDP), and paired-pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real-time processing, which are essential for applications in artificial intelligence (AI).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"91 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143660537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sehyun Park, Seongyeop Kim, Soojin Lee, Vladimir V. Tsukruk, SeungHyun Park, Hyo-Ryoung Lim
Microfluidic-based wearable electrochemical sensors represent a transformative approach to non-invasive, real-time health monitoring through continuous biochemical analysis of body fluids such as sweat, saliva, and interstitial fluid. These systems offer significant potential for personalized healthcare and disease management by enabling real-time detection of key biomarkers. However, challenges remain in optimizing microfluidic channel design, ensuring consistent biofluid collection, balancing high-resolution fabrication with scalability, integrating flexible biocompatible materials, and establishing standardized validation protocols. This review explores advancements in microfluidic design, fabrication techniques, and integrated electrochemical sensors that have improved sensitivity, selectivity, and durability. Conventional photolithography, 3D printing, and laser-based fabrication methods are compared, highlighting their mechanisms, advantages, and trade-offs in microfluidic channel production. The application section summarizes strategies to overcome variability in biofluid composition, sensor drift, and user adaptability through innovative solutions such as hybrid material integration, self-powered systems, and AI-assisted data analysis. By analyzing recent breakthroughs, this paper outlines critical pathways for expanding wearable sensor technologies and achieving seamless operation in diverse real-world settings, paving the way for a new era of digital health.
{"title":"Advanced Microfluidic-Based Wearable Electrochemical Sensors for Continuous Biochemical Monitoring","authors":"Sehyun Park, Seongyeop Kim, Soojin Lee, Vladimir V. Tsukruk, SeungHyun Park, Hyo-Ryoung Lim","doi":"10.1002/aelm.202500010","DOIUrl":"https://doi.org/10.1002/aelm.202500010","url":null,"abstract":"Microfluidic-based wearable electrochemical sensors represent a transformative approach to non-invasive, real-time health monitoring through continuous biochemical analysis of body fluids such as sweat, saliva, and interstitial fluid. These systems offer significant potential for personalized healthcare and disease management by enabling real-time detection of key biomarkers. However, challenges remain in optimizing microfluidic channel design, ensuring consistent biofluid collection, balancing high-resolution fabrication with scalability, integrating flexible biocompatible materials, and establishing standardized validation protocols. This review explores advancements in microfluidic design, fabrication techniques, and integrated electrochemical sensors that have improved sensitivity, selectivity, and durability. Conventional photolithography, 3D printing, and laser-based fabrication methods are compared, highlighting their mechanisms, advantages, and trade-offs in microfluidic channel production. The application section summarizes strategies to overcome variability in biofluid composition, sensor drift, and user adaptability through innovative solutions such as hybrid material integration, self-powered systems, and AI-assisted data analysis. By analyzing recent breakthroughs, this paper outlines critical pathways for expanding wearable sensor technologies and achieving seamless operation in diverse real-world settings, paving the way for a new era of digital health.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu
A memristive device is presented based on a Ti/GaOx/W stack with an amorphous GaOx layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiOx layer and the GaOx one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaOx-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.
{"title":"Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States","authors":"Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu","doi":"10.1002/aelm.202400765","DOIUrl":"https://doi.org/10.1002/aelm.202400765","url":null,"abstract":"A memristive device is presented based on a Ti/GaO<sub>x</sub>/W stack with an amorphous GaO<sub>x</sub> layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiO<sub>x</sub> layer and the GaO<sub>x</sub> one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaO<sub>x</sub>-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.
{"title":"Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer","authors":"Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim","doi":"10.1002/aelm.202400744","DOIUrl":"https://doi.org/10.1002/aelm.202400744","url":null,"abstract":"The integration of silver nanowire (AgNW) networks with MoS<sub>2</sub>/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS<sub>2</sub> and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS<sub>2</sub> surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS<sub>2</sub>/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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