Boosting conversion efficiency by bandgap engineering of ecofriendly antimony trisulfide indoor photovoltaics via a modeling approach

IF 6.3 2区 材料科学 Q2 ENERGY & FUELS Solar Energy Materials and Solar Cells Pub Date : 2024-05-30 DOI:10.1016/j.solmat.2024.112961
Yu Cao , Qiang Li , Jing Zhou , Sanlong Wang , Xiaoming Yu , Xuan Yu , Sen Li , Jinbo Pang
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Abstract

With the exponential growth of the Internet of Things (IoT), indoor photovoltaics (IPVs) have emerged as a pivotal technology for powering low-power devices, drawing heightened interest due to their adaptability to indoor environments. The Photovoltaic Conversion Efficiency (PCE) of IPV cells is critically dependent on their ability to match the indoor spectrum with the device's response characteristics. In this realm, Antimony Trisulfide (Sb2S3), characterized by its wide bandgap and high absorption coefficient, emerges as a promising candidate for low-light applications. Our study focuses on the modeling and numerical analysis of Sb2S3 thin-film IPV cells by wxAMPS software, aiming to refine both the device structure and its photoelectric performance for effective indoor light harvesting. In a strategic shift from conventional CdS materials, we utilized SnO2—known for its high transmissivity, non-toxicity, and wide bandgap—as the electron transport layer (ETL) in Sb2S3 IPV cells. This substitution notably enhanced the short-wave response, elevating the spectral response from 45 % to 80 % at 400 nm. Additionally, we introduced a bandgap-tunable ZnOS buffer layer. This innovation proved instrumental in rectifying the band alignment mismatch between SnO2 and Sb2S3 layer, thereby optimizing interfacial electron transport properties. The integration of the ZnOS buffer layer effectively improved the fill factor from 40.0 % to 64.7 % of the Sb2S3 IPV cell by solving the band mismatch problem. The resulting optimized Sb2S3 IPV cell demonstrated exceptional response characteristics across the full visible spectrum (400–750 nm) and showed notable photoelectric performance under both fluorescent lamps (FLs) and light-emitting diodes (LEDs). Moreover, a detailed analysis was conducted on the performance differences of the device under indoor light sources compared to solar spectrum conditions, along with the underlying mechanisms. Finally, the Sb2S3 IPV cell achieved a peak theoretical efficiency of 46.25 % under cold white FL lighting, a testament to the optimal match between the device structure and this specific emission power spectrum. This modeling research not only underscores the feasibility of employing antimony-based photovoltaic technologies in indoor settings but also offers theoretical guidance for further advancements in this domain.

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通过建模方法对环保型三硫化锑室内光伏器件进行带隙工程设计,提高转换效率
随着物联网(IoT)的迅猛发展,室内光伏(IPV)已成为为低功耗设备供电的一项关键技术,由于其对室内环境的适应性而备受关注。IPV 电池的光电转换效率 (PCE) 关键取决于其将室内光谱与设备响应特性相匹配的能力。在这一领域,以宽带隙和高吸收系数为特点的三硫化锑(SbS)有望成为弱光应用的候选材料。我们的研究重点是利用 wxAMPS 软件对 SbS 薄膜 IPV 电池进行建模和数值分析,旨在完善器件结构及其光电性能,从而实现有效的室内光收集。作为对传统 CdS 材料的战略性转变,我们利用 SnO(因其高透过率、无毒性和宽带隙而闻名)作为 SbS IPV 电池的电子传输层(ETL)。这种替代显著增强了短波响应,将 400 纳米波长的光谱响应从 45% 提高到 80%。此外,我们还引入了带隙可调的 ZnOS 缓冲层。事实证明,这一创新有助于纠正氧化锡和硫化锑层之间的带排列失配,从而优化界面电子传输特性。通过解决带错配问题,ZnOS 缓冲层的集成有效地将 SbS IPV 电池的填充因子从 40.0% 提高到 64.7%。优化后的 SbS IPV 电池在整个可见光谱(400-750 nm)范围内都表现出卓越的响应特性,在荧光灯(FL)和发光二极管(LED)下都表现出显著的光电性能。此外,还详细分析了该器件在室内光源与太阳光谱条件下的性能差异及其内在机理。最后,在冷白光 FL 照明条件下,SbS IPV 电池达到了 46.25% 的理论峰值效率,证明了设备结构与这种特定发射功率谱的最佳匹配。这项建模研究不仅强调了在室内环境中采用锑基光伏技术的可行性,还为该领域的进一步发展提供了理论指导。
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来源期刊
Solar Energy Materials and Solar Cells
Solar Energy Materials and Solar Cells 工程技术-材料科学:综合
CiteScore
12.60
自引率
11.60%
发文量
513
审稿时长
47 days
期刊介绍: Solar Energy Materials & Solar Cells is intended as a vehicle for the dissemination of research results on materials science and technology related to photovoltaic, photothermal and photoelectrochemical solar energy conversion. Materials science is taken in the broadest possible sense and encompasses physics, chemistry, optics, materials fabrication and analysis for all types of materials.
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