Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

IF 10.7 Q1 CHEMISTRY, PHYSICAL EcoMat Pub Date : 2024-06-03 DOI:10.1002/eom2.12456
Yulin Liu, Sumin Bae, Seongha Lee, Anqi Wang, Youngsoo Jung, Doh-Kwon Lee, Jung-Kun Lee
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Abstract

Formamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects of SnO2 like oxygen vacancies. They cause low crystallinity, non-uniform grain growth, and more interface defects, leading to carrier recombination and leakage current. The passivation of the interface between FAPbI3 and SnO2 is an effective process to address these materials issues. Herein, a dual role of lead sulfide (PbS) quantum dots (QDs) in the interface passivation is explored. PbS QDs which are introduced to the interface between FAPbI3 and ETL, link to Sn-dangling bonds of SnO2 ETLs and anchor the iodine atoms of FAPbI3. This changes considerably lower nonradiative recombination, achieve a better energetic alignment between ETL and PbI3, and facilitate electron extraction, leading to a power conversion efficiency of 21.66%.

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通过 PbS 量子点的界面钝化,在 SnO2 上控制生长均匀致密的过氧化物层
碘化甲脒铅(FAPbI3)和二氧化锡是一对很有前途的卤化物包晶和电子传输层(ETL)。然而,FAPbI3 和 SnO2 都存在固有的问题,例如 FAPbI3 的结晶温度较高,而 SnO2 则存在氧空位等表面缺陷。它们会造成结晶度低、晶粒生长不均匀和更多的界面缺陷,从而导致载流子重组和泄漏电流。对 FAPbI3 和 SnO2 之间的界面进行钝化是解决这些材料问题的有效方法。本文探讨了硫化铅(PbS)量子点(QDs)在界面钝化中的双重作用。硫化铅量子点被引入 FAPbI3 和 ETL 之间的界面,与二氧化锡 ETL 的锡键相连,并锚定 FAPbI3 的碘原子。这种变化大大降低了非辐射重组,实现了 ETL 和 PbI3 之间更好的能量排列,并促进了电子萃取,从而使功率转换效率达到 21.66%。
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CiteScore
17.30
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审稿时长
4 weeks
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