The influence of light on transverse magnetoresistance oscillations in low-dimensional semiconductor structures

Abstract

In this work, the influence of light on the temperature dependence of transverse magnetoresistance oscillations is studied. A generalized mathematical expression that calculates the temperature and light dependence of the quasi-Fermi levels of small-scale p-type semiconductor structures in a quantizing magnetic field is derived. New analytical expressions have been found to represent the temperature dependence of transverse differential magnetoresistance ossillations in dark and light situations, taking into account the effect of light on the ossillations of the Fermi energy of small-scale semiconductor structures. A mathematical model determining the light dependence of the second-order derivative of oscillations of transverse magnetoresistance of p-type semiconductors with quantum wells on magnetic field induction is developed. A new theory explaining the reasons for the significant shift of oscillations of differential magnetoresistance along the vertical axis measured in the experiment for dark and light conditions is proposed.