Deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma using tailored voltage waveform discharges

M. Otaka, Hiroshi Otomo, Kizuku Ikeda, Jian-Syun Lai, Daichi Wakita, K. Kamataki, K. Koga, M. Shiratani, Daiki Nagamatsu, Takahiro Shindo, Tatsuo Matsudo
{"title":"Deposition of hydrogenated amorphous carbon films by CH4/Ar capacitively coupled plasma using tailored voltage waveform discharges","authors":"M. Otaka, Hiroshi Otomo, Kizuku Ikeda, Jian-Syun Lai, Daichi Wakita, K. Kamataki, K. Koga, M. Shiratani, Daiki Nagamatsu, Takahiro Shindo, Tatsuo Matsudo","doi":"10.35848/1347-4065/ad53b0","DOIUrl":null,"url":null,"abstract":"\n We investigated effects of tailored voltage waveform (TVWs) discharges on deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVWs discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shift to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma enhanced chemical vapor deposition (PECVD) for a-C:H films using TVWs discharges realize control of film properties such as mass density, sp3 fraction and H content, with keeping deposition rate constant. Thus, it is suggested that TVWs discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.","PeriodicalId":505044,"journal":{"name":"Japanese Journal of Applied Physics","volume":"18 6","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2024-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Japanese Journal of Applied Physics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.35848/1347-4065/ad53b0","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We investigated effects of tailored voltage waveform (TVWs) discharges on deposition of hydrogenated amorphous carbon (a-C:H) films in CH4/Ar capacitively coupled plasma. TVWs discharges employ two driving radio frequencies (13.56 MHz and 27.12 MHz) and control their phase shift to independently regulate ion bombardment energy (IBE) and ion flux. In this study, a-C:H films were deposited by changing DC-self bias with phase shift and constant applied voltage peak-to-peak. Additionally, we investigated phase resolved optical emission spectroscopy (PROES) for plasma characterization. As a result, plasma enhanced chemical vapor deposition (PECVD) for a-C:H films using TVWs discharges realize control of film properties such as mass density, sp3 fraction and H content, with keeping deposition rate constant. Thus, it is suggested that TVWs discharges realize the independent control of IBE and ion flux with high accuracy, highlighting its utility in a-C:H film depositions.
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利用定制电压波形放电的 CH4/Ar 电容耦合等离子体沉积氢化无定形碳薄膜
我们研究了定制电压波形(TVWs)放电对氢化无定形碳(a-C:H)薄膜在 CH4/Ar 电容耦合等离子体中沉积的影响。TVWs 放电采用两种驱动无线电频率(13.56 MHz 和 27.12 MHz)并控制其相移,以独立调节离子轰击能量(IBE)和离子通量。在这项研究中,我们通过改变直流自偏压来沉积 a-C:H 薄膜,同时改变相移和恒定施加电压的峰-峰值。此外,我们还研究了用于等离子体表征的相位分辨光学发射光谱 (PROES)。结果表明,使用 TVWs 放电的 a-C:H 薄膜的等离子体增强化学气相沉积(PECVD)实现了对薄膜特性的控制,如质量密度、sp3 分数和 H 含量,同时保持沉积速率不变。因此,TVWs 放电实现了高精度的 IBE 和离子通量独立控制,突出了其在 a-C:H 薄膜沉积中的实用性。
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