{"title":"Versatile Landscape of Low-k Polyimide: Theories, Synthesis, Synergistic Properties, and Industrial Integration","authors":"Xiaodi Dong, Baoquan Wan and Jun-Wei Zha*, ","doi":"10.1021/acs.chemrev.3c00802","DOIUrl":null,"url":null,"abstract":"<p >The development of microelectronics and large-scale intelligence nowadays promotes the integration, miniaturization, and multifunctionality of electronic and devices but also leads to the increment of signal transmission delays, crosstalk, and energy consumption. The exploitation of materials with low permittivity (low-<i>k</i>) is crucial for realizing innovations in microelectronics. However, due to the high permittivity of conventional interlayer dielectric material (<i>k</i> ∼ 4.0), it is difficult to meet the demands of current microelectronic technology development (<i>k</i> < 3.0). Organic dielectric materials have attracted much attention because of their relatively low permittivity owing to their low material density and low single bond polarization. Polyimide (PI) exhibits better application potential based on its well permittivity tunability (<i>k</i> = 1.1–3.2), high thermal stability (>500 °C), and mechanical property (modulus of elasticity up to 3.0–4.0 GPa). In this review, based on the synergistic relationship of dielectric parameters of materials, the development of nearly 20 years on low-<i>k</i> PI is thoroughly summarized. Moreover, process strategies for modifying low-<i>k</i> PI at the molecular level, multiphase recombination, and interface engineering are discussed exhaustively. The industrial application, technological challenges, and future development of low-<i>k</i> PI are also analyzed, which will provide meaningful guidance for the design and practical application of multifunctional low-<i>k</i> materials.</p>","PeriodicalId":32,"journal":{"name":"Chemical Reviews","volume":null,"pages":null},"PeriodicalIF":51.4000,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Chemical Reviews","FirstCategoryId":"92","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.chemrev.3c00802","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The development of microelectronics and large-scale intelligence nowadays promotes the integration, miniaturization, and multifunctionality of electronic and devices but also leads to the increment of signal transmission delays, crosstalk, and energy consumption. The exploitation of materials with low permittivity (low-k) is crucial for realizing innovations in microelectronics. However, due to the high permittivity of conventional interlayer dielectric material (k ∼ 4.0), it is difficult to meet the demands of current microelectronic technology development (k < 3.0). Organic dielectric materials have attracted much attention because of their relatively low permittivity owing to their low material density and low single bond polarization. Polyimide (PI) exhibits better application potential based on its well permittivity tunability (k = 1.1–3.2), high thermal stability (>500 °C), and mechanical property (modulus of elasticity up to 3.0–4.0 GPa). In this review, based on the synergistic relationship of dielectric parameters of materials, the development of nearly 20 years on low-k PI is thoroughly summarized. Moreover, process strategies for modifying low-k PI at the molecular level, multiphase recombination, and interface engineering are discussed exhaustively. The industrial application, technological challenges, and future development of low-k PI are also analyzed, which will provide meaningful guidance for the design and practical application of multifunctional low-k materials.
如今,微电子学和大规模智能化的发展促进了电子和设备的集成化、微型化和多功能化,但同时也导致了信号传输延迟、串扰和能耗的增加。利用低介电常数(low-k)材料对于实现微电子技术的创新至关重要。然而,由于传统层间介电材料的介电系数较高(k ∼ 4.0),很难满足当前微电子技术发展的需求(k < 3.0)。有机介电材料由于材料密度低、单键极化程度低,因此介电系数相对较低,因而备受关注。聚酰亚胺(PI)具有良好的介电常数可调性(k = 1.1-3.2)、高热稳定性(>500 °C)和机械性能(弹性模量高达 3.0-4.0 GPa),因而具有更好的应用潜力。本综述基于材料介电参数的协同关系,全面总结了近 20 年来低介电系数 PI 的发展。此外,还详尽讨论了在分子水平、多相重组和界面工程等方面对低 k PI 进行改性的工艺策略。还分析了低 K PI 的工业应用、技术挑战和未来发展,这将为多功能低 K 材料的设计和实际应用提供有意义的指导。
期刊介绍:
Chemical Reviews is a highly regarded and highest-ranked journal covering the general topic of chemistry. Its mission is to provide comprehensive, authoritative, critical, and readable reviews of important recent research in organic, inorganic, physical, analytical, theoretical, and biological chemistry.
Since 1985, Chemical Reviews has also published periodic thematic issues that focus on a single theme or direction of emerging research.