A 335–407-GHz SiGe-Based Subharmonic Mixer Using a Fully Integrated LO Generation

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-04-24 DOI:10.1109/LMWT.2024.3389061
Jonathan Bott;David Starke;Florian Vogelsang;Jan Schöpfel;Christian Bredendiek;Klaus Aufinger;Nils Pohl
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Abstract

This letter introduces a silicon–germanium (SiGe)-based subharmonic mixer (SHM) optimized for THz radar applications, operating at a center frequency of 360 GHz with a 3-dB bandwidth of 72 GHz. This mixer is a key component in a fully integrated receiver, featuring a wideband 90-GHz voltage-controlled oscillator (VCO), a frequency doubler stage, and power amplifier (PA) stages. The mixer exhibits a conversion gain of −6.1 dB while maintaining an excellent input compression point of >4 dBm, accompanied by a simulated noise figure (NF) of 24.8 dB. Moreover, a current consumption of only 8.6 mA underlines the energy efficiency.
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使用全集成 LO 发生器的 335-407-GHz 硅基次谐波混频器
这封信介绍了一种基于硅锗(SiGe)的次谐波混频器(SHM),该混频器针对太赫兹雷达应用进行了优化,中心频率为 360 GHz,3 分贝带宽为 72 GHz。该混频器是全集成接收器中的关键部件,具有 90 GHz 宽带压控振荡器 (VCO)、倍频级和功率放大器 (PA) 级。混频器的转换增益为 -6.1 dB,同时保持了大于 4 dBm 的出色输入压缩点,模拟噪声系数 (NF) 为 24.8 dB。此外,仅 8.6 mA 的电流消耗也凸显了其能效。
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Table of Contents IEEE Microwave and Wireless Technology Letters Information for Authors IEEE Microwave and Wireless Technology Letters publication TechRxiv: Share Your Preprint Research with the World IEEE Open Access Publishing
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