Pub Date : 2024-11-07DOI: 10.1109/LMWT.2024.3480634
{"title":"TechRxiv: Share Your Preprint Research with the World","authors":"","doi":"10.1109/LMWT.2024.3480634","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3480634","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1314-1314"},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10746912","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-07DOI: 10.1109/LMWT.2024.3475165
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3475165","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3475165","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2024-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10746893","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-08DOI: 10.1109/LMWT.2024.3463375
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2024.3463375","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3463375","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 10","pages":"C3-C3"},"PeriodicalIF":0.0,"publicationDate":"2024-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10709629","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142397430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-04DOI: 10.1109/LMWT.2024.3462714
Wei Shen;Tian-Le Zhou;Jun-Wei Shi;Lin-Sheng Wu
A novel substrate integrated waveguide (SIW) filtering crossover with improved isolation insensitive to bandwidth is proposed. Four TE101 -mode SIW cavities and one square SIW cavity operating at two degenerate modes are used to realize the filtering crossover. The symmetrical coupling windows on each side of the square SIW cavity are used to obtain 180° phase difference between input and isolated ports, and then, high isolated level can be obtained, which becomes insensitive to the variation of filter bandwidth. Finally, an SIW filtering crossover sample operating at 20 GHz is designed and fabricated on the standard printed circuit board technology.
{"title":"Substrate Integrated Waveguide Filtering Crossover With High Isolation Insensitive to Bandwidth","authors":"Wei Shen;Tian-Le Zhou;Jun-Wei Shi;Lin-Sheng Wu","doi":"10.1109/LMWT.2024.3462714","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3462714","url":null,"abstract":"A novel substrate integrated waveguide (SIW) filtering crossover with improved isolation insensitive to bandwidth is proposed. Four TE101 -mode SIW cavities and one square SIW cavity operating at two degenerate modes are used to realize the filtering crossover. The symmetrical coupling windows on each side of the square SIW cavity are used to obtain 180° phase difference between input and isolated ports, and then, high isolated level can be obtained, which becomes insensitive to the variation of filter bandwidth. Finally, an SIW filtering crossover sample operating at 20 GHz is designed and fabricated on the standard printed circuit board technology.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1243-1246"},"PeriodicalIF":0.0,"publicationDate":"2024-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-02DOI: 10.1109/LMWT.2024.3466935
Bin-Yun Han;Jin Xu;Jia-Hao Su;Ming Zhao;Fang Liu;Hao Wan
This letter presents a new method for broadband attenuator design, which uses dual-branch resistors and microstrip-line-loaded slotline structure. Resistors are loaded on slotline to achieve attenuation property, and dual-branch configuration and implantable microstrip line in each branch are proposed to improve attenuation slope within broadband when the attenuation amount becomes large. To validate the proposed design method, an 11-stage attenuator is designed and measured, which has a minimum insertion loss of 1.92 dB, a dynamic attenuation range of 20 dB, and a return loss of better than 8.5 dB, within the bandwidth of 2–5 GHz. Moreover, the effect of parasitic inductance in used resistors is also investigated to clarify the attenuation fluctuation of the measured attenuator.
{"title":"A Broadband Attenuator Using Dual-Branch Resistors and Microstrip-Line-Loaded Slotline Structure With Improved Attenuation Slope","authors":"Bin-Yun Han;Jin Xu;Jia-Hao Su;Ming Zhao;Fang Liu;Hao Wan","doi":"10.1109/LMWT.2024.3466935","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3466935","url":null,"abstract":"This letter presents a new method for broadband attenuator design, which uses dual-branch resistors and microstrip-line-loaded slotline structure. Resistors are loaded on slotline to achieve attenuation property, and dual-branch configuration and implantable microstrip line in each branch are proposed to improve attenuation slope within broadband when the attenuation amount becomes large. To validate the proposed design method, an 11-stage attenuator is designed and measured, which has a minimum insertion loss of 1.92 dB, a dynamic attenuation range of 20 dB, and a return loss of better than 8.5 dB, within the bandwidth of 2–5 GHz. Moreover, the effect of parasitic inductance in used resistors is also investigated to clarify the attenuation fluctuation of the measured attenuator.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1227-1230"},"PeriodicalIF":0.0,"publicationDate":"2024-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142594987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-10-01DOI: 10.1109/LMWT.2024.3466131
Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak
This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain ( $A_{text {V}}$ ). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/ ${f} ^{3}$ PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/ ${f} ^{3}$ PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.
{"title":"A 5.99-GHz VCO With Wideband-Differential-Mode Second Harmonic Resonance Achieving −138.9 dBc/Hz Phase Noise at an Offset of 10 MHz","authors":"Chaowei Yang;Yong Chen;Yunbo Huang;Rui P. Martins;Pui-In Mak","doi":"10.1109/LMWT.2024.3466131","DOIUrl":"https://doi.org/10.1109/LMWT.2024.3466131","url":null,"abstract":"This article presents a voltage-controlled oscillator (VCO) with wideband-differential-mode (DM) second harmonic resonance. It features a single-turn multitap inductor plus a small tail resonator to boost the drain-to-gate voltage gain (\u0000<inline-formula> <tex-math>$A_{text {V}}$ </tex-math></inline-formula>\u0000). It also creates intrinsic-high-Q impedance peaks at the fundamental and double oscillation frequencies, which simultaneously achieves phase noise (PN) and 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN-corner reduction. Prototyped in 65-nm CMOS, the 5.99-GHz VCO scores a −138.9 dBc/Hz PN at an offset of 10 MHz and consumes 3.17 mW of power with a 0.67 V supply. The achieved figure-of-merit (FoM) values were 177.5, 186.6, and 189.4 dBc/Hz at an offset of 0.1, 1, and 10 MHz, with a 1/\u0000<inline-formula> <tex-math>${f} ^{3}$ </tex-math></inline-formula>\u0000 PN corner of 400 kHz. Over a 14% tuning range (TR), without any additional harmonic tuning, the VCO upholds a consistent FoM >189 dBc/Hz at an offset of 10 MHz. The core area is 0.465 mm2.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 11","pages":"1267-1270"},"PeriodicalIF":0.0,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142595086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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