Pub Date : 2026-01-23DOI: 10.1109/LMWT.2026.3651201
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2026.3651201","DOIUrl":"https://doi.org/10.1109/LMWT.2026.3651201","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"36 1","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2026-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11361552","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146026509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1109/LMWT.2025.3640326
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3640326","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3640326","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11302136","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145765637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1109/LMWT.2025.3640353
{"title":"TechRxiv: Share Your Preprint Research with the World","authors":"","doi":"10.1109/LMWT.2025.3640353","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3640353","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2098-2098"},"PeriodicalIF":3.4,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11302135","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766175","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-12-17DOI: 10.1109/LMWT.2025.3640332
{"title":"IEEE Microwave and Wireless Technology Letters Information for Authors","authors":"","doi":"10.1109/LMWT.2025.3640332","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3640332","url":null,"abstract":"","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"C3-C3"},"PeriodicalIF":3.4,"publicationDate":"2025-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11302131","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1109/LMWT.2025.3633956
Iaroslav Shilinkov;Rob Maaskant;Gregor Lasser
A fully self-contained active open-loop load–pull measurement system based on a commercial radio frequency system-on-chip (RFSoC) evaluation board is presented. The proposed setup eliminates the need for external signal generators and vector network analyzers (VNAs) by leveraging the ZCU216’s integrated high-speed DACs and ADCs. A simple and extensible calibration method is introduced to accurately synthesize arbitrary load impedances presented to the device under test (DUT). The system’s flexibility is demonstrated through three measurement scenarios: return loss measurements of a 3-D-printed horn antenna and small-signal gain measurements of the commercial RF power amplifier (PA) QPA9501, utilizing the setup as a two-port VNA and active load–pull measurements of the same PA at 5.4 GHz. Measurements agree with E5071C VNA measurements, validating the system’s effectiveness and highlighting the potential of RFSoC platforms as cost-effective, reconfigurable alternatives to traditional load–pull instrumentation.
{"title":"Open-Loop Active Load–Pull Setup Using the ZCU216 Radio Frequency System-on-Chip","authors":"Iaroslav Shilinkov;Rob Maaskant;Gregor Lasser","doi":"10.1109/LMWT.2025.3633956","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3633956","url":null,"abstract":"A fully self-contained active open-loop load–pull measurement system based on a commercial radio frequency system-on-chip (RFSoC) evaluation board is presented. The proposed setup eliminates the need for external signal generators and vector network analyzers (VNAs) by leveraging the ZCU216’s integrated high-speed DACs and ADCs. A simple and extensible calibration method is introduced to accurately synthesize arbitrary load impedances presented to the device under test (DUT). The system’s flexibility is demonstrated through three measurement scenarios: return loss measurements of a 3-D-printed horn antenna and small-signal gain measurements of the commercial RF power amplifier (PA) QPA9501, utilizing the setup as a two-port VNA and active load–pull measurements of the same PA at 5.4 GHz. Measurements agree with E5071C VNA measurements, validating the system’s effectiveness and highlighting the potential of RFSoC platforms as cost-effective, reconfigurable alternatives to traditional load–pull instrumentation.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2121-2124"},"PeriodicalIF":3.4,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11264812","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-24DOI: 10.1109/LMWT.2025.3632413
Dan Suzuki;Kishio Hidaka;Saijian Ajia;Yasushi Endo;Motoshi Tanaka;Shotaro Takahashi;Tomonaga Ueno;Sho Muroga
We propose a design methodology for millimeter-wave absorbers that visualizes target electromagnetic (EM) properties as a 3-D map. Verification with fabricated carbon nanotube (CNT) composites revealed that the 3 wt.% sample achieved the target absorption performance, surpassing the 5 wt.% sample which was near a Pareto-optimal front for permittivity. Our design map quantitatively showed that this was attributable to the high conductivity of the 5 wt.% sample. This demonstrates that our methodology serves not merely as a validation tool but provides a specific pathway for optimizing a material’s physical properties.
{"title":"Material Design Guidelines for Millimeter-Wave Absorbers Based on 3-D Visualization of Target Permittivity and Conductivity","authors":"Dan Suzuki;Kishio Hidaka;Saijian Ajia;Yasushi Endo;Motoshi Tanaka;Shotaro Takahashi;Tomonaga Ueno;Sho Muroga","doi":"10.1109/LMWT.2025.3632413","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3632413","url":null,"abstract":"We propose a design methodology for millimeter-wave absorbers that visualizes target electromagnetic (EM) properties as a 3-D map. Verification with fabricated carbon nanotube (CNT) composites revealed that the 3 wt.% sample achieved the target absorption performance, surpassing the 5 wt.% sample which was near a Pareto-optimal front for permittivity. Our design map quantitatively showed that this was attributable to the high conductivity of the 5 wt.% sample. This demonstrates that our methodology serves not merely as a validation tool but provides a specific pathway for optimizing a material’s physical properties.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2101-2104"},"PeriodicalIF":3.4,"publicationDate":"2025-11-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766206","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-11-14DOI: 10.1109/LMWT.2025.3630277
Ting-Li Hsu;Amelie Hagelauer;Valentyn Solomko
In this work, a closed-loop radio frequency (RF) frontend impedance tuning system with high-voltage impedance tuning switches monolithically integrated with an RF reflectometer is presented. An RF application-specific integrated circuit (ASIC) integrating a low-power scalar RF reflectometer and two RF tuning switches is designed and manufactured in ${90}{,}text{nm}$ RF SOI CMOS switch technology. A hardware prototype closed-loop tuning system is built with the designed ASIC along with a commercial impedance tuning IC, aiming for tuning at operating frequencies between 690 and ${900}{,}text {MHz}$ . The circuit can process signals with power greater than ${18}{,}text {dBm}$ , while the RF voltage handling capability reaches ${63}{,}text {V}$ with the linearity of $text {IIP}_{{3}}={84}{,}text {dBm}$ in the signal path. The designed ASIC consumes ${46}{,}{{mu }text {W}}$ and ${184}{,}{{mu }text {W}}$ in idle and conversion mode, respectively.
{"title":"A Closed-Loop Impedance Tuner With Integrated Reflectometer and High-Voltage Tuning Switches","authors":"Ting-Li Hsu;Amelie Hagelauer;Valentyn Solomko","doi":"10.1109/LMWT.2025.3630277","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3630277","url":null,"abstract":"In this work, a closed-loop radio frequency (RF) frontend impedance tuning system with high-voltage impedance tuning switches monolithically integrated with an RF reflectometer is presented. An RF application-specific integrated circuit (ASIC) integrating a low-power scalar RF reflectometer and two RF tuning switches is designed and manufactured in <inline-formula> <tex-math>${90}{,}text{nm}$ </tex-math></inline-formula> RF SOI CMOS switch technology. A hardware prototype closed-loop tuning system is built with the designed ASIC along with a commercial impedance tuning IC, aiming for tuning at operating frequencies between 690 and <inline-formula> <tex-math>${900}{,}text {MHz}$ </tex-math></inline-formula>. The circuit can process signals with power greater than <inline-formula> <tex-math>${18}{,}text {dBm}$ </tex-math></inline-formula>, while the RF voltage handling capability reaches <inline-formula> <tex-math>${63}{,}text {V}$ </tex-math></inline-formula> with the linearity of <inline-formula> <tex-math>$text {IIP}_{{3}}={84}{,}text {dBm}$ </tex-math></inline-formula> in the signal path. The designed ASIC consumes <inline-formula> <tex-math>${46}{,}{{mu }text {W}}$ </tex-math></inline-formula> and <inline-formula> <tex-math>${184}{,}{{mu }text {W}}$ </tex-math></inline-formula> in idle and conversion mode, respectively.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2117-2120"},"PeriodicalIF":3.4,"publicationDate":"2025-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11248891","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766214","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In wireless communications, accurate frequency estimation is essential to support reliable demodulation, channel management, and spectrum surveillance. At terahertz frequencies, the higher carrier values and narrow channel spacing demand much finer frequency estimation, which requires high-resolution frequency discrimination. Conventional grating-based approaches are bulky and limited in resolution, making them unsuitable for compact terahertz systems. In this letter, we present a 3D-printed pseudo-random dielectric metasurface that enables subgigahertz frequency discrimination in the 220–330-GHz band through spatially diverse near-field patterns. The design leverages frequency-dependent scattering to create unique intensity distributions captured by a terahertz camera. We demonstrate that these spatial signatures can be used for frequency discrimination by training a convolutional neural network (CNN) to identify the frequency from a single image. To substantiate the reliability of the metasurface response, we employ multiple beam configurations with varying incidence angles in our experimental setup. The results demonstrate high classification accuracy over the operational range, thus corroborating the metasurface as a viable passive frequency analyzer for terahertz communications.
{"title":"3D-Printed Frequency-Diverse Metasurface for Camera-Based Terahertz Frequency Analyzer","authors":"Sakib Quader;Mariam Abdullah;Estrid He;Christophe Fumeaux;Withawat Withayachumnankul","doi":"10.1109/LMWT.2025.3628705","DOIUrl":"https://doi.org/10.1109/LMWT.2025.3628705","url":null,"abstract":"In wireless communications, accurate frequency estimation is essential to support reliable demodulation, channel management, and spectrum surveillance. At terahertz frequencies, the higher carrier values and narrow channel spacing demand much finer frequency estimation, which requires high-resolution frequency discrimination. Conventional grating-based approaches are bulky and limited in resolution, making them unsuitable for compact terahertz systems. In this letter, we present a 3D-printed pseudo-random dielectric metasurface that enables subgigahertz frequency discrimination in the 220–330-GHz band through spatially diverse near-field patterns. The design leverages frequency-dependent scattering to create unique intensity distributions captured by a terahertz camera. We demonstrate that these spatial signatures can be used for frequency discrimination by training a convolutional neural network (CNN) to identify the frequency from a single image. To substantiate the reliability of the metasurface response, we employ multiple beam configurations with varying incidence angles in our experimental setup. The results demonstrate high classification accuracy over the operational range, thus corroborating the metasurface as a viable passive frequency analyzer for terahertz communications.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"35 12","pages":"2105-2108"},"PeriodicalIF":3.4,"publicationDate":"2025-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145766193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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