Low-Voltage Quadrature Voltage-Controlled-Oscillator Using Twisted Transformer

IF 3.4 0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-04-22 DOI:10.1109/LMWT.2024.3386332
Sheng-Lyang Jang;Yi-Ping Hsieh;Miin-Horng Juang;Jiun-Yu Sung;Wen-Cheng Lai
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Abstract

For low supply voltage operation, the voltage-controlled oscillator (VCO) with low voltage swing is subject to the injection pulling effect. This letter presents a low-voltage CMOS four-phase VCO using two differential LC VCOs coupled by two cross-coupled transformers. The proposed oscillator mitigates the injection-pulling effect by the 8-shaped transformers with two lobes. The transformers cancel the interference noise coupling and offer a drain-to-source transformer feedback to swing the source voltage to below ground level and to increase the voltage swing. The die area of the quadrature voltage-controlled oscillator (QVCO) in the TSMC $0.18~\mu \text{m}$ BiCMOS process is $1.2\times0.963$ mm2. At the supply of 0.49 V, the oscillation frequency of the QVCO is 4.49 GHz and the figure of merit (FOM) is -187.032 dBc/Hz.
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使用双绞线变压器的低压正交压控振荡器
在低电源电压下工作时,具有低电压摆幅的压控振荡器(VCO)会受到注入拉效应的影响。本文提出了一种低电压 CMOS 四相 VCO,它使用由两个交叉耦合变压器耦合的两个差分 LC VCO。所提出的振荡器通过具有两个叶片的 8 型变压器来减轻注入拉效应。变压器可消除干扰噪声耦合,并提供漏极至源极变压器反馈,将源极电压摆动到地平以下,从而提高电压摆幅。正交压控振荡器(QVCO)采用台积电 0.18~μmu \text{m}$ BiCMOS 工艺,芯片面积为 1.2/times0.963$ mm2。在 0.49 V 的电源电压下,QVCO 的振荡频率为 4.49 GHz,优越性(FOM)为 -187.032 dBc/Hz。
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