Bismuth pyramid formation during solidification of eutectic tin-bismuth alloy using 4D X-ray microtomography

IF 7.5 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Communications Materials Pub Date : 2024-06-06 DOI:10.1038/s43246-024-00538-9
Amey Luktuke, Alan L. Kastengren, Viktor Nikitin, Hamidreza Torbati-Sarraf, Nikhilesh Chawla
{"title":"Bismuth pyramid formation during solidification of eutectic tin-bismuth alloy using 4D X-ray microtomography","authors":"Amey Luktuke, Alan L. Kastengren, Viktor Nikitin, Hamidreza Torbati-Sarraf, Nikhilesh Chawla","doi":"10.1038/s43246-024-00538-9","DOIUrl":null,"url":null,"abstract":"Next-generation electronic packaging strategies like heterogeneous integration packaging necessitate low melting temperature solder alloys. The Sn-58Bi alloy is notable candidate for its low melting point, but the development of coarse Bi particles during solidification adversely affects the joint’s mechanical properties. The mechanisms determining the morphology of these Bi particles remain unexplored. Here, we employ a 4D investigation of the solder solidification process. We observe the growth of novel pyramidal morphology of precipitating Bi in-situ during the solidification. We decipher the growth mechanisms that lead to the pyramidal shape of Bi crystals. The crystallographic nature of the pyramid facets and the inaccuracies in the Jackson factor prediction of interface stability for semimetals is investigated in detail. An alternative way of analyzing the atomic configuration for a stable solid-liquid interface is proposed. Finally, the effect of grain boundary defect formation on the growth morphology of Bi crystals is studied. Tin-bismuth alloy solders are used in electronic packaging, but the formation of bismuth particles is known to be detrimental to the mechanical performance of joints. Here, 4D x-ray microtomography is used to study the formation of pyramidal bismuth crystals during the solidification of eutectic Sn-58Bi.","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":null,"pages":null},"PeriodicalIF":7.5000,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00538-9.pdf","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Communications Materials","FirstCategoryId":"1085","ListUrlMain":"https://www.nature.com/articles/s43246-024-00538-9","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

Next-generation electronic packaging strategies like heterogeneous integration packaging necessitate low melting temperature solder alloys. The Sn-58Bi alloy is notable candidate for its low melting point, but the development of coarse Bi particles during solidification adversely affects the joint’s mechanical properties. The mechanisms determining the morphology of these Bi particles remain unexplored. Here, we employ a 4D investigation of the solder solidification process. We observe the growth of novel pyramidal morphology of precipitating Bi in-situ during the solidification. We decipher the growth mechanisms that lead to the pyramidal shape of Bi crystals. The crystallographic nature of the pyramid facets and the inaccuracies in the Jackson factor prediction of interface stability for semimetals is investigated in detail. An alternative way of analyzing the atomic configuration for a stable solid-liquid interface is proposed. Finally, the effect of grain boundary defect formation on the growth morphology of Bi crystals is studied. Tin-bismuth alloy solders are used in electronic packaging, but the formation of bismuth particles is known to be detrimental to the mechanical performance of joints. Here, 4D x-ray microtomography is used to study the formation of pyramidal bismuth crystals during the solidification of eutectic Sn-58Bi.

Abstract Image

查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
利用 4D X 射线显微层析技术分析共晶锡铋合金凝固过程中铋金字塔的形成
下一代电子封装战略(如异质集成封装)需要低熔点的焊料合金。Sn-58Bi 合金因其熔点低而备受青睐,但在凝固过程中产生的粗大 Bi 粒子会对焊点的机械性能产生不利影响。决定这些 Bi 颗粒形态的机制仍未得到研究。在此,我们对焊料凝固过程进行了 4D 研究。在凝固过程中,我们观察到析出的铋在原位形成了新的金字塔形态。我们破译了导致铋晶体呈金字塔形的生长机制。我们详细研究了金字塔面的晶体学性质以及 Jackson 因子对半金属界面稳定性预测的不准确性。还提出了分析稳定固液界面原子构型的另一种方法。最后,研究了晶界缺陷的形成对铋晶体生长形态的影响。锡铋合金焊料用于电子封装,但铋颗粒的形成对接头的机械性能有害。这里使用 4D X 射线显微层析技术研究了共晶 Sn-58Bi 凝固过程中金字塔形铋晶体的形成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
Communications Materials
Communications Materials MATERIALS SCIENCE, MULTIDISCIPLINARY-
CiteScore
12.10
自引率
1.30%
发文量
85
审稿时长
17 weeks
期刊介绍: Communications Materials, a selective open access journal within Nature Portfolio, is dedicated to publishing top-tier research, reviews, and commentary across all facets of materials science. The journal showcases significant advancements in specialized research areas, encompassing both fundamental and applied studies. Serving as an open access option for materials sciences, Communications Materials applies less stringent criteria for impact and significance compared to Nature-branded journals, including Nature Communications.
期刊最新文献
Thermodynamic evidence for polaron stabilization inside the antiferromagnetic order of Eu5In2Sb6 Benefits and complexity of defects in metal-organic frameworks Multi-sensing yarns for continuous wireless sweat lactate monitoring Unexpected band structure changes within the higher-temperature antiferromagnetic state of CeBi Bioengineering approach for the design of magnetic bacterial cellulose membranes
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1