Pub Date : 2025-01-01Epub Date: 2025-01-07DOI: 10.1038/s43246-024-00721-y
Nassir Mokarram, Ayden Case, Nadia N Hossainy, Johnathan G Lyon, Tobey J MacDonald, Ravi Bellamkonda
The blood-brain barrier, essential for protecting the central nervous system, also restricts drug delivery to this region. Thus, delivering drugs across the blood-brain barrier is an active research area in immunology, oncology, and neurology; moreover, novel methods are urgently needed to expand therapeutic options for central nervous system pathologies. While previous strategies have focused on small molecules that modulate blood-brain barrier permeability or penetrate the barrier, there is an increased focus on biomedical devices-external or implanted-for improving drug delivery. Here, we review device-assisted drug delivery across the blood-brain barrier, emphasizing its application in glioblastoma, an aggressively malignant primary brain cancer in which the blood-brain barrier plays a central role. We examine the blood-brain barrier and its features in glioblastoma, emerging models for studying the blood-brain barrier, and device-assisted methods for crossing the blood-brain barrier. We conclude by presenting methods to monitor the blood-brain barrier and paradigms for combined cross-BBB drug delivery.
{"title":"Device-assisted strategies for drug delivery across the blood-brain barrier to treat glioblastoma.","authors":"Nassir Mokarram, Ayden Case, Nadia N Hossainy, Johnathan G Lyon, Tobey J MacDonald, Ravi Bellamkonda","doi":"10.1038/s43246-024-00721-y","DOIUrl":"10.1038/s43246-024-00721-y","url":null,"abstract":"<p><p>The blood-brain barrier, essential for protecting the central nervous system, also restricts drug delivery to this region. Thus, delivering drugs across the blood-brain barrier is an active research area in immunology, oncology, and neurology; moreover, novel methods are urgently needed to expand therapeutic options for central nervous system pathologies. While previous strategies have focused on small molecules that modulate blood-brain barrier permeability or penetrate the barrier, there is an increased focus on biomedical devices-external or implanted-for improving drug delivery. Here, we review device-assisted drug delivery across the blood-brain barrier, emphasizing its application in glioblastoma, an aggressively malignant primary brain cancer in which the blood-brain barrier plays a central role. We examine the blood-brain barrier and its features in glioblastoma, emerging models for studying the blood-brain barrier, and device-assisted methods for crossing the blood-brain barrier. We conclude by presenting methods to monitor the blood-brain barrier and paradigms for combined cross-BBB drug delivery.</p>","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":"6 1","pages":"5"},"PeriodicalIF":7.5,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11706785/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142945882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-01Epub Date: 2025-01-07DOI: 10.1038/s43246-024-00729-4
Jens Oppliger, Julia Küspert, Ann-Christin Dippel, Martin V Zimmermann, Olof Gutowski, Xiaolin Ren, Xingjiang Zhou, Zhihai Zhu, Ruggero Frison, Qisi Wang, Leonardo Martinelli, Izabela Biało, Johan Chang
The discovery of unconventional superconductivity often triggers significant interest in associated electronic and structural symmetry breaking phenomena. For the infinite-layer nickelates, structural allotropes are investigated intensively. Here, using high-energy grazing-incidence x-ray diffraction, we demonstrate how in-situ temperature annealing of the infinite-layer nickelate PrNiO2+x (x ≈ 0) induces a giant superlattice structure. The annealing effect has a maximum well above room temperature. By covering a large scattering volume, we show a rare period-six in-plane (bi-axial) symmetry and a period-four symmetry in the out-of-plane direction. This giant unit-cell superstructure-likely stemming from ordering of diffusive oxygen-persists over a large temperature range and can be quenched. As such, the stability and controlled annealing process leading to the formation of this superlattice structure provides a pathway for novel nickelate chemistry.
{"title":"Discovery of giant unit-cell super-structure in the infinite-layer nickelate PrNiO<sub>2+<i>x</i></sub>.","authors":"Jens Oppliger, Julia Küspert, Ann-Christin Dippel, Martin V Zimmermann, Olof Gutowski, Xiaolin Ren, Xingjiang Zhou, Zhihai Zhu, Ruggero Frison, Qisi Wang, Leonardo Martinelli, Izabela Biało, Johan Chang","doi":"10.1038/s43246-024-00729-4","DOIUrl":"https://doi.org/10.1038/s43246-024-00729-4","url":null,"abstract":"<p><p>The discovery of unconventional superconductivity often triggers significant interest in associated electronic and structural symmetry breaking phenomena. For the infinite-layer nickelates, structural allotropes are investigated intensively. Here, using high-energy grazing-incidence x-ray diffraction, we demonstrate how in-situ temperature annealing of the infinite-layer nickelate PrNiO<sub>2+<i>x</i></sub> (<i>x</i> ≈ 0) induces a giant superlattice structure. The annealing effect has a maximum well above room temperature. By covering a large scattering volume, we show a rare period-six in-plane (bi-axial) symmetry and a period-four symmetry in the out-of-plane direction. This giant unit-cell superstructure-likely stemming from ordering of diffusive oxygen-persists over a large temperature range and can be quenched. As such, the stability and controlled annealing process leading to the formation of this superlattice structure provides a pathway for novel nickelate chemistry.</p>","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":"6 1","pages":"3"},"PeriodicalIF":7.5,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11703755/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142945884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-01-01Epub Date: 2025-01-14DOI: 10.1038/s43246-024-00730-x
Herbert Kobald, Alexander M Kobald, Ivana Panzic, Marco Deluca
Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi0.5Na0.5TiO3 is gaining importance in showing an alternative to lead-based devices. Here we show that (1-x)Bi0.5Na0.5TiO3 - xBaZr y Ti 1-y O3 (best: 0.94Bi0.5Na0.5TiO3 -0.06BaZr0.4Ti0.6O3) shows an increase of recoverable energy density and electric breakdown upon chemical substitution. In thin films derived from Chemical Solution Deposition, we observed that polarization peaks at the morphotropic phase boundary at x = 0.06. While Zr substitution results in reduced polarization, it enhances both efficiency and electric breakdown strength, ultimately doubling the recoverable energy density and the metallization interface by lowering surface roughness. Our dielectric capacitor shows <3% deviation of energy properties over 106 cycles. A virtual device model of a multilayer thin film capacitor (7.25 mJ recoverable energy) was used to compare its performance to already in use multilayer ceramic capacitors.
在铁电和弛豫之间的交叉点，钙钛矿常被用来实现具有高能量和功率密度，同时又具有良好效率的介质电容器。无铅Bi0.5Na0.5TiO3在展示铅基器件的替代品方面越来越重要。结果表明，（1-x）Bi0.5Na0.5TiO3 - xBaZr y Ti 1-y O3（最佳值：0.94Bi0.5Na0.5TiO3 -0.06 bazr0.4 ti0.6 O3）经化学取代后，可回收能量密度和电击穿均有所增加。在化学溶液沉积的薄膜中，我们观察到在x = 0.06时，极化峰在致形相边界处。虽然Zr取代导致极化降低，但它提高了效率和电击穿强度，最终通过降低表面粗糙度使可回收能量密度和金属化界面增加一倍。我们的介质电容器显示6个周期。利用多层薄膜电容器（7.25 mJ可回收能量）的虚拟器件模型，将其性能与已有的多层陶瓷电容器进行了比较。
{"title":"Enhanced energy storage in relaxor (1-x)Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub>-xBaZr<sub>y</sub>Ti<sub>1-y</sub>O<sub>3</sub> thin films by morphotropic phase boundary engineering.","authors":"Herbert Kobald, Alexander M Kobald, Ivana Panzic, Marco Deluca","doi":"10.1038/s43246-024-00730-x","DOIUrl":"10.1038/s43246-024-00730-x","url":null,"abstract":"<p><p>Perovskites at the crossover between ferroelectric and relaxor are often used to realize dielectric capacitors with high energy and power density and simultaneously good efficiency. Lead-free Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> is gaining importance in showing an alternative to lead-based devices. Here we show that (<i>1-x</i>)Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> - <i>x</i>BaZr <sub><i>y</i></sub> Ti <sub><i>1-y</i></sub> O<sub>3</sub> (best: 0.94Bi<sub>0.5</sub>Na<sub>0.5</sub>TiO<sub>3</sub> -0.06BaZr<sub>0.4</sub>Ti<sub>0.6</sub>O<sub>3</sub>) shows an increase of recoverable energy density and electric breakdown upon chemical substitution. In thin films derived from Chemical Solution Deposition, we observed that polarization peaks at the morphotropic phase boundary at <i>x</i> = 0.06. While Zr substitution results in reduced polarization, it enhances both efficiency and electric breakdown strength, ultimately doubling the recoverable energy density and the metallization interface by lowering surface roughness. Our dielectric capacitor shows <3% deviation of energy properties over 10<sup>6</sup> cycles. A virtual device model of a multilayer thin film capacitor (7.25 mJ recoverable energy) was used to compare its performance to already in use multilayer ceramic capacitors.</p>","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":"6 1","pages":"12"},"PeriodicalIF":7.5,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC11732744/pdf/","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143001499","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-27DOI: 10.1038/s43246-024-00725-8
Amélie Dussaigne, Colin Paillet, Névine Rochat, David Cooper, Adeline Grenier, Stéphane Vézian, Benjamin Damilano, Adrien Michon, Bérangère Hyot
Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels could be achieved using monolithically integrated InGaN based micro-LEDs. Here, we report the growth of high optical quality RGB InGaN/InGaN quantum wells grown on InGaN nanopyramids of diameter less than 1 µm by metal organic vapor phase epitaxy. We synthesized the nanopyramids by nanoselective area growth using an in situ patterned epitaxial graphene on SiC as an embedded mask. The RGB emission properties at different locations on the sample are dependent on the size of the InGaN nanopyramids. Advanced correlative analysis conducted on the same transmission electron microscopy lamella reveal a fully or at least nearly relaxed In0.13Ga0.87N core and very regular quantum wells emitting in the red range (620 nm) along the pyramid sidewalls with an In content up to 40%. Full color micro-displays for augmented and virtual reality applications require a pixel pitch below 10 µm. Here, a metal organic vapor phase epitaxy method was demonstrated to grow high quality red-green-blue InGaN quantum wells on InGaN nanopyramids of less than 1 µm diameter with an In content up to 40%
{"title":"Regular red-green-blue InGaN quantum wells with In content up to 40% grown on InGaN nanopyramids","authors":"Amélie Dussaigne, Colin Paillet, Névine Rochat, David Cooper, Adeline Grenier, Stéphane Vézian, Benjamin Damilano, Adrien Michon, Bérangère Hyot","doi":"10.1038/s43246-024-00725-8","DOIUrl":"10.1038/s43246-024-00725-8","url":null,"abstract":"Full color micro-displays with a pixel pitch of below 10 µm are needed for augmented and virtual reality applications. In the native emission approach, high efficiency Red-Green-Blue (RGB) pixels could be achieved using monolithically integrated InGaN based micro-LEDs. Here, we report the growth of high optical quality RGB InGaN/InGaN quantum wells grown on InGaN nanopyramids of diameter less than 1 µm by metal organic vapor phase epitaxy. We synthesized the nanopyramids by nanoselective area growth using an in situ patterned epitaxial graphene on SiC as an embedded mask. The RGB emission properties at different locations on the sample are dependent on the size of the InGaN nanopyramids. Advanced correlative analysis conducted on the same transmission electron microscopy lamella reveal a fully or at least nearly relaxed In0.13Ga0.87N core and very regular quantum wells emitting in the red range (620 nm) along the pyramid sidewalls with an In content up to 40%. Full color micro-displays for augmented and virtual reality applications require a pixel pitch below 10 µm. Here, a metal organic vapor phase epitaxy method was demonstrated to grow high quality red-green-blue InGaN quantum wells on InGaN nanopyramids of less than 1 µm diameter with an In content up to 40%","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-11"},"PeriodicalIF":7.5,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00725-8.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890027","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-26DOI: 10.1038/s43246-024-00673-3
Yang Ding, Yefan Wu, Xiangxiang Feng, Hengyue Li, Erming Feng, Jianhui Chang, Caoyu Long, Yuanji Gao, Junliang Yang
Triple-cation perovskite solar cells exhibit better long-term stability as compared to FAPbI3 devices but also have more ions and vacancies defects in film. Herein, ammonium formate (NH4HCO2) is introduced and forms a stable NH4HCO2-PbI2 adduct onto the surface of perovskite to patch grain boundary cracks and passivate interfacial defects. The density functional theory calculation results indicate that there is a strong interface interaction between perovskite and NH4HCO2, and the defects are well anchored by forming Pb··COOH bond and I··NH4 bond. The density of states proves that surface trap states by the I vacancy is also effectively eliminated, which is consistent with the experimental results. As a result, the optimized devices achieve a power conversion efficiency of 24.62% and exhibit remarkable long-term stability in air. This work provides a simple defect multiple passivation strategy to prepare perovskite solar cells with high efficiency and stability. Triple-cation perovskite solar cells are more stable than formamidinium lead iodide but possess more defects. Here, grain boundary cracks and passivate interfacial defects are patched using ammonium formate which forms a stable adduct on the perovskite surface.
{"title":"Grain boundary cracks patching and defect dual passivation with ammonium formate for high-efficiency triple-cation perovskite solar cells","authors":"Yang Ding, Yefan Wu, Xiangxiang Feng, Hengyue Li, Erming Feng, Jianhui Chang, Caoyu Long, Yuanji Gao, Junliang Yang","doi":"10.1038/s43246-024-00673-3","DOIUrl":"10.1038/s43246-024-00673-3","url":null,"abstract":"Triple-cation perovskite solar cells exhibit better long-term stability as compared to FAPbI3 devices but also have more ions and vacancies defects in film. Herein, ammonium formate (NH4HCO2) is introduced and forms a stable NH4HCO2-PbI2 adduct onto the surface of perovskite to patch grain boundary cracks and passivate interfacial defects. The density functional theory calculation results indicate that there is a strong interface interaction between perovskite and NH4HCO2, and the defects are well anchored by forming Pb··COOH bond and I··NH4 bond. The density of states proves that surface trap states by the I vacancy is also effectively eliminated, which is consistent with the experimental results. As a result, the optimized devices achieve a power conversion efficiency of 24.62% and exhibit remarkable long-term stability in air. This work provides a simple defect multiple passivation strategy to prepare perovskite solar cells with high efficiency and stability. Triple-cation perovskite solar cells are more stable than formamidinium lead iodide but possess more defects. Here, grain boundary cracks and passivate interfacial defects are patched using ammonium formate which forms a stable adduct on the perovskite surface.","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-7"},"PeriodicalIF":7.5,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00673-3.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142890097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-24DOI: 10.1038/s43246-024-00726-7
Haoting Cai, Wei Tong, Lichuan Wei, Mengjie Song, Yugang Zhao, Kang Li, Hua Zhang, Chun Yang, Ping Cheng
Surface design by tailoring topographical features and interface function groups to modulate dynamic or kinetic behaviors of liquid droplets, has been an increasing hotspot due to its broad spectrum of applications in biochemical diagnosis, microfabrication, and energy conversion systems. Here we report an engineered surface decorated by packed nanosized caltrops resulting from two perfectly articulated oxidation processes, where self-assembled nanoislands generated in the 1st plasma oxidation serve as protective masks in the 2nd chemical oxidation. As caltrops per design can effectively block lateral motion, the present surface can anchor contact lines of advancing water films when being hydrophilic and selectively capture impinging droplets when being hydrophobic. Furthermore, biphilic patterns can be readily obtained by integrating nanocaltrops with other surface asperities, engendering directional droplet maneuvering and designated droplet arraying. This work provides guidelines in designing nanostructures that achieve on-demand manipulation of droplets and flow patterns for multifunctional applications. Surface features can be designed to modulate the dynamic and kinetic behaviours of liquid droplets but require robust wettability and low-cost fabrication. Here, a surface packed with nanosized caltrops can effectively block lateral motion and engineered to allow directional droplet maneuvering
{"title":"Nanosized caltrops enable selective capture and directional maneuvering of water droplets","authors":"Haoting Cai, Wei Tong, Lichuan Wei, Mengjie Song, Yugang Zhao, Kang Li, Hua Zhang, Chun Yang, Ping Cheng","doi":"10.1038/s43246-024-00726-7","DOIUrl":"10.1038/s43246-024-00726-7","url":null,"abstract":"Surface design by tailoring topographical features and interface function groups to modulate dynamic or kinetic behaviors of liquid droplets, has been an increasing hotspot due to its broad spectrum of applications in biochemical diagnosis, microfabrication, and energy conversion systems. Here we report an engineered surface decorated by packed nanosized caltrops resulting from two perfectly articulated oxidation processes, where self-assembled nanoislands generated in the 1st plasma oxidation serve as protective masks in the 2nd chemical oxidation. As caltrops per design can effectively block lateral motion, the present surface can anchor contact lines of advancing water films when being hydrophilic and selectively capture impinging droplets when being hydrophobic. Furthermore, biphilic patterns can be readily obtained by integrating nanocaltrops with other surface asperities, engendering directional droplet maneuvering and designated droplet arraying. This work provides guidelines in designing nanostructures that achieve on-demand manipulation of droplets and flow patterns for multifunctional applications. Surface features can be designed to modulate the dynamic and kinetic behaviours of liquid droplets but require robust wettability and low-cost fabrication. Here, a surface packed with nanosized caltrops can effectively block lateral motion and engineered to allow directional droplet maneuvering","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-11"},"PeriodicalIF":7.5,"publicationDate":"2024-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00726-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-21DOI: 10.1038/s43246-024-00722-x
Rafael O. Moreno-Tortolero, Juliusz Michalski, Eleanor Wells, Flora Gibb, Nick Skaer, Robert Walker, Louise Serpell, Chris Holland, Sean A. Davis
Silk’s remarkable properties arise from its hierarchical structure, formed through natural transformation from an aqueous solution to a solid fibre driven by pH and flow stress under low-energy conditions. In contrast, artificial silk fabrication typically relies on extrusion-based methods using coagulating baths and unnatural solvents, limiting true biomimetic replication. Here, we find that native-like silk fibroin forms viscoelastic films at the air-water interface. Utilizing this, we demonstrate a mild, all-aqueous method to seamlessly pull silk-like fibres with co-aligned nanofibrillar bundles. The fiber structure transitioned from hexagonally packed β-solenoid units at low pulling speeds to β-sheet-rich structures at higher speeds. Fibers pulled near physiological speeds (26.3 mm s-¹) exhibited optimal mechanical properties, with an elastic modulus of 8 ± 1 GPa and toughness of 8 ± 5 MJ m-³, comparable to natural silk. This platform also enables embedding nanoparticles and biologics, offering broad applications in sensors, biocatalysis, and tissue engineering, expanding the potential of silk-based composite materials. Artificial silk fabrication relies on extrusion-based methods that lack true biomimetic replication. Here, silk-like fibres composed of co-aligned nanofibrillar bundles are pulled from films produced at the air-water interface
丝绸的卓越性能源于它的分层结构，这种结构是在低能条件下由pH值和流动应力驱动的水溶液到固体纤维的自然转化过程中形成的。相比之下，人造丝的制造通常依赖于基于挤压的方法，使用凝固浴和非天然溶剂，限制了真正的仿生复制。在这里，我们发现天然丝素蛋白在空气-水界面形成粘弹性膜。利用这一点，我们展示了一种温和的全水方法，可以无缝地拉出具有共排列纳米纤维束的丝状纤维。纤维结构从低拉速下的六边形填充β-螺线管单元过渡到高拉速下的富β片结构。接近生理速度（26.3 mm s-¹）的纤维表现出最佳的力学性能，弹性模量为8±1 GPa，韧性为8±5 MJ m-³，与天然丝相当。该平台还可以嵌入纳米颗粒和生物制剂，在传感器、生物催化和组织工程中提供广泛的应用，扩大了丝绸基复合材料的潜力。人造丝的制造依赖于基于挤压的方法，缺乏真正的仿生复制。在这里，由共排列的纳米纤维束组成的丝状纤维是从空气-水界面产生的薄膜中拉出来的
{"title":"Manipulating the water–air interface to drive protein assembly for functional silk-like fibroin fibre production","authors":"Rafael O. Moreno-Tortolero, Juliusz Michalski, Eleanor Wells, Flora Gibb, Nick Skaer, Robert Walker, Louise Serpell, Chris Holland, Sean A. Davis","doi":"10.1038/s43246-024-00722-x","DOIUrl":"10.1038/s43246-024-00722-x","url":null,"abstract":"Silk’s remarkable properties arise from its hierarchical structure, formed through natural transformation from an aqueous solution to a solid fibre driven by pH and flow stress under low-energy conditions. In contrast, artificial silk fabrication typically relies on extrusion-based methods using coagulating baths and unnatural solvents, limiting true biomimetic replication. Here, we find that native-like silk fibroin forms viscoelastic films at the air-water interface. Utilizing this, we demonstrate a mild, all-aqueous method to seamlessly pull silk-like fibres with co-aligned nanofibrillar bundles. The fiber structure transitioned from hexagonally packed β-solenoid units at low pulling speeds to β-sheet-rich structures at higher speeds. Fibers pulled near physiological speeds (26.3 mm s-¹) exhibited optimal mechanical properties, with an elastic modulus of 8 ± 1 GPa and toughness of 8 ± 5 MJ m-³, comparable to natural silk. This platform also enables embedding nanoparticles and biologics, offering broad applications in sensors, biocatalysis, and tissue engineering, expanding the potential of silk-based composite materials. Artificial silk fabrication relies on extrusion-based methods that lack true biomimetic replication. Here, silk-like fibres composed of co-aligned nanofibrillar bundles are pulled from films produced at the air-water interface","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-10"},"PeriodicalIF":7.5,"publicationDate":"2024-12-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00722-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142880578","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-20DOI: 10.1038/s43246-024-00718-7
T. Henksmeier, P. Mahler, A. Wolff, D. Deutsch, M. Voigt, L. Ruhm, A. M. Sanchez, D. J. As, G. Grundmeier, D. Reuter
Recently, remote epitaxy has been explored for the fabrication of freestanding semiconductor membranes and substrate re-use. For remote epitaxy a thin 2D material layer is either manually transferred to a substrate or grown directly on a substrate at high temperature, thus limiting the process scalability or the choice of substrates. Here, we report on the low-temperature deposition (300 °C) of ultrathin sp2-hybridized 2D amorphous carbon layers with roughness ≤0.3 nm on III-V semiconductor substrates by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and detailed characterization of 2D amorphous carbon layers on various host substrates and their subsequent remote epitaxial overgrowth by solid-source molecular beam epitaxy. We observe that a low-temperature nucleation step is favorable for nucleation of III-V material growth on amorphous carbon coated substrates. Under optimized preparation conditions, we obtain high-quality, single-crystalline GaAs, cubic-AlN, cubic-GaN and $${{rm{I}}}{{{rm{n}}}}_{{{rm{x}}}}{{{rm{Ga}}}}_{1-{{rm{x}}}}{{rm{As}}}$$ layers on GaAs, 3C-SiC and InP carbon-coated (001)-oriented substrates. Our results demonstrate a universal template fabrication process for remote epitaxy. Remote epitaxy is used to grow semiconductor structures on 2D material covered substrates. Here, a method for fabricating ultrathin 2D amorphous carbon layers on III-V semiconductors is demonstrated using plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy.
{"title":"Low-temperature fabrication of amorphous carbon films as a universal template for remote epitaxy","authors":"T. Henksmeier, P. Mahler, A. Wolff, D. Deutsch, M. Voigt, L. Ruhm, A. M. Sanchez, D. J. As, G. Grundmeier, D. Reuter","doi":"10.1038/s43246-024-00718-7","DOIUrl":"10.1038/s43246-024-00718-7","url":null,"abstract":"Recently, remote epitaxy has been explored for the fabrication of freestanding semiconductor membranes and substrate re-use. For remote epitaxy a thin 2D material layer is either manually transferred to a substrate or grown directly on a substrate at high temperature, thus limiting the process scalability or the choice of substrates. Here, we report on the low-temperature deposition (300 °C) of ultrathin sp2-hybridized 2D amorphous carbon layers with roughness ≤0.3 nm on III-V semiconductor substrates by plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy. We present growth and detailed characterization of 2D amorphous carbon layers on various host substrates and their subsequent remote epitaxial overgrowth by solid-source molecular beam epitaxy. We observe that a low-temperature nucleation step is favorable for nucleation of III-V material growth on amorphous carbon coated substrates. Under optimized preparation conditions, we obtain high-quality, single-crystalline GaAs, cubic-AlN, cubic-GaN and $${{rm{I}}}{{{rm{n}}}}_{{{rm{x}}}}{{{rm{Ga}}}}_{1-{{rm{x}}}}{{rm{As}}}$$ layers on GaAs, 3C-SiC and InP carbon-coated (001)-oriented substrates. Our results demonstrate a universal template fabrication process for remote epitaxy. Remote epitaxy is used to grow semiconductor structures on 2D material covered substrates. Here, a method for fabricating ultrathin 2D amorphous carbon layers on III-V semiconductors is demonstrated using plasma-enhanced chemical vapor deposition as a universal template for remote epitaxy.","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-12"},"PeriodicalIF":7.5,"publicationDate":"2024-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00718-7.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-19DOI: 10.1038/s43246-024-00695-x
Camille M. Bernal-Choban, Vladimir Ladygin, Garrett E. Granroth, Claire N. Saunders, Stefan H. Lohaus, Douglas L. Abernathy, Jiao YY. Lin, Brent Fultz
The latent heat, L, is central to melting, but its atomic origin remains elusive. It is proportional to the entropy of fusion, ΔSfus = L/Tm (Tm is the melting temperature), which depends on changes of atom configurations, atom vibrations, and thermal electron excitations. Here, we combine inelastic neutron scattering and machine-learned molecular dynamics to separate ΔSfus into these components for Ge, Si, Bi, Sn, Pb, and Li. When the vibrational entropy of melting, ΔSvib, is zero, ΔSfus ≃ 1.2 kB per atom. This result provides a baseline for ΔSconfig and nearly coincides with “Richard’s Rule” of melting. The ΔSfus deviates from this value for most elements, however, and we show that this deviation originates with extra ΔSvib and extra ΔSconfig. These two components are correlated for positive and negative deviations from Richard’s rule – the extra ΔSconfig is consistently ~ 80% of ΔSvib. Our results, interpreted with potential energy landscape theory, imply a correlation between the change in the number of basins and the change in the inverse of their curvature for the melting of pure elements. The atomistic components that drive entropy of fusion and ultimately characterize latent heat of melting are not well defined. Here, inelastic neutron scattering and machine-learned molecular dynamics are used to quantify these thermodynamic contributions to the entropy of fusion in pure elements.
{"title":"Atomistic origin of the entropy of melting from inelastic neutron scattering and machine learned molecular dynamics","authors":"Camille M. Bernal-Choban, Vladimir Ladygin, Garrett E. Granroth, Claire N. Saunders, Stefan H. Lohaus, Douglas L. Abernathy, Jiao YY. Lin, Brent Fultz","doi":"10.1038/s43246-024-00695-x","DOIUrl":"10.1038/s43246-024-00695-x","url":null,"abstract":"The latent heat, L, is central to melting, but its atomic origin remains elusive. It is proportional to the entropy of fusion, ΔSfus = L/Tm (Tm is the melting temperature), which depends on changes of atom configurations, atom vibrations, and thermal electron excitations. Here, we combine inelastic neutron scattering and machine-learned molecular dynamics to separate ΔSfus into these components for Ge, Si, Bi, Sn, Pb, and Li. When the vibrational entropy of melting, ΔSvib, is zero, ΔSfus ≃ 1.2 kB per atom. This result provides a baseline for ΔSconfig and nearly coincides with “Richard’s Rule” of melting. The ΔSfus deviates from this value for most elements, however, and we show that this deviation originates with extra ΔSvib and extra ΔSconfig. These two components are correlated for positive and negative deviations from Richard’s rule – the extra ΔSconfig is consistently ~ 80% of ΔSvib. Our results, interpreted with potential energy landscape theory, imply a correlation between the change in the number of basins and the change in the inverse of their curvature for the melting of pure elements. The atomistic components that drive entropy of fusion and ultimately characterize latent heat of melting are not well defined. Here, inelastic neutron scattering and machine-learned molecular dynamics are used to quantify these thermodynamic contributions to the entropy of fusion in pure elements.","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-12"},"PeriodicalIF":7.5,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00695-x.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-12-19DOI: 10.1038/s43246-024-00720-z
Bin He, Mengyu Yao, Yu Pan, Kathryn E. Arpino, Dong Chen, Federico M. Serrano-Sanchez, Sailong Ju, Ming Shi, Yan Sun, Claudia Felser
Weyl fermions are chiral massless fermions with exotic properties. In the first established magnetic Weyl semimetal, Co3Sn2S2, a giant anomalous Hall effect has been observed, while its Fermi energy remaining 60 meV from the Weyl points. Shifting the Fermi energy closer to the Weyl points may assist in the identification of Weyl Fermion related transport signatures. Here we show that effective chlorine doping has resulted in a shift of the Fermi energy by 15 meV towards the Weyl points, which is confirmed by a combination of the systematic angular-resolved photoemission spectroscopy measurements and density function theory calculations. A five-fold reduction in resistivity is observed in the ferromagnetic phase, accompanied by a pronounced magnetoresistance of over 150%. The anomalous Hall conductivity shows a peak of 1680 Scm−1 at 40 K, which is 30% higher than the undoped sample due to a stronger Weyl point contribution. This work demonstrates the essential role of doping in Co3Sn2S2 for an enhanced Weyl semimetal signature. Weyl fermions are chiral massless fermions with interesting exotic properties. Here, chlorine doping of Co3Sn2S2 single crystals is found to shift the Fermi energy towards the Weyl points, enhancing its Weyl semimetal signatures such as a ninefold increase in magnetoresistance and a significantly larger anomalous Hall conductivity.
{"title":"Enhanced Weyl semimetal signature in Co3Sn2S2 Kagome ferromagnet by chlorine doping","authors":"Bin He, Mengyu Yao, Yu Pan, Kathryn E. Arpino, Dong Chen, Federico M. Serrano-Sanchez, Sailong Ju, Ming Shi, Yan Sun, Claudia Felser","doi":"10.1038/s43246-024-00720-z","DOIUrl":"10.1038/s43246-024-00720-z","url":null,"abstract":"Weyl fermions are chiral massless fermions with exotic properties. In the first established magnetic Weyl semimetal, Co3Sn2S2, a giant anomalous Hall effect has been observed, while its Fermi energy remaining 60 meV from the Weyl points. Shifting the Fermi energy closer to the Weyl points may assist in the identification of Weyl Fermion related transport signatures. Here we show that effective chlorine doping has resulted in a shift of the Fermi energy by 15 meV towards the Weyl points, which is confirmed by a combination of the systematic angular-resolved photoemission spectroscopy measurements and density function theory calculations. A five-fold reduction in resistivity is observed in the ferromagnetic phase, accompanied by a pronounced magnetoresistance of over 150%. The anomalous Hall conductivity shows a peak of 1680 Scm−1 at 40 K, which is 30% higher than the undoped sample due to a stronger Weyl point contribution. This work demonstrates the essential role of doping in Co3Sn2S2 for an enhanced Weyl semimetal signature. Weyl fermions are chiral massless fermions with interesting exotic properties. Here, chlorine doping of Co3Sn2S2 single crystals is found to shift the Fermi energy towards the Weyl points, enhancing its Weyl semimetal signatures such as a ninefold increase in magnetoresistance and a significantly larger anomalous Hall conductivity.","PeriodicalId":10589,"journal":{"name":"Communications Materials","volume":" ","pages":"1-7"},"PeriodicalIF":7.5,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.nature.com/articles/s43246-024-00720-z.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142862468","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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