Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves
{"title":"Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching (Adv. Electron. Mater. 6/2024)","authors":"Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves","doi":"10.1002/aelm.202470021","DOIUrl":null,"url":null,"abstract":"<p><b>Oxide-Based Electrolyte-Gated Transistors</b></p><p>ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.\n\n <figure>\n <div><picture>\n <source></source></picture><p></p>\n </div>\n </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":5.3000,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470021","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/aelm.202470021","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Oxide-Based Electrolyte-Gated Transistors
ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.
期刊介绍:
Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.