SiO2/Ag2O Substitution of Borosilicate Glasses: Preparation, Structure, Physical Features and γ-ray Protection Capability

IF 3.3 3区 材料科学 Q3 CHEMISTRY, PHYSICAL Silicon Pub Date : 2024-06-15 DOI:10.1007/s12633-024-03059-9
Nada Alfryyan, Hanan Al-Ghamdi, Norah A. M. Alsaif, Islam M. Nabil, A. M. Abdelghany, A. S. Abouhaswa, Y. S. Rammah
{"title":"SiO2/Ag2O Substitution of Borosilicate Glasses: Preparation, Structure, Physical Features and γ-ray Protection Capability","authors":"Nada Alfryyan,&nbsp;Hanan Al-Ghamdi,&nbsp;Norah A. M. Alsaif,&nbsp;Islam M. Nabil,&nbsp;A. M. Abdelghany,&nbsp;A. S. Abouhaswa,&nbsp;Y. S. Rammah","doi":"10.1007/s12633-024-03059-9","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, nature, physical characteristics and γ-ray protection features of the 50B<sub>2</sub>O<sub>3</sub> + 1Tb<sub>4</sub>O<sub>7</sub> + (20-X)SiO<sub>2</sub> + 19BaF<sub>2</sub> + 10Li<sub>2</sub>O + XAg<sub>2</sub>O, where X = 0–5 mol% glasses were investigated. Samples were prepared using the melt quenching procedure and named AgOX. The MCNP simulation code and EpiXs software (EPX) were applied to achieve the mentioned aims. XRD measurements confirmed the amorphous nature of AgOX samples. The density (D<sub>s</sub>) of AgOX enhanced from 2.61 g/cm<sup>3</sup> to 2.92 g/ cm<sup>3</sup> as AgO content increased from 0.0 to 5.0 mol%. Molar volume (V<sub>m</sub>) declined from 35.06 cm<sup>3</sup>/mol to 34.02 cm<sup>3</sup>/mol. The packing density (P<sub>d</sub>) enhanced from 0.517 to 0.533, while the free volume (V<sub>f</sub>) changed from 16.37 cm<sup>3</sup>/mol for the AgO0 sample to 15.86 cm3/mol for the AgO5 sample. Linear-attenuation (µ) order was AgO0 &lt; AgO1 &lt; AgO2 &lt; AgO3 &lt; AgO5. The AgO5 sample possessed the lowest half (HVL) and tenth (TVL)-value layers as well as mean free path (MFP). Within the investigated energy range of effective atomic number (<span>\\({\\text{Z}}_{\\text{ef}})\\)</span> within the range: 44.540 – 15.220, 44.599 – 15.580, 44.653 – 15.929, 44.704 – 16.269, and 44.797 – 16.922 for AgO0, AgO1, AgO2, AgO3, and AgO5 glasses, respectively. The AgO5 sample offers the best γ-ray shielding capability among AgOX glasses.</p></div>","PeriodicalId":776,"journal":{"name":"Silicon","volume":"16 12","pages":"5019 - 5028"},"PeriodicalIF":3.3000,"publicationDate":"2024-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Silicon","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s12633-024-03059-9","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
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Abstract

In this study, nature, physical characteristics and γ-ray protection features of the 50B2O3 + 1Tb4O7 + (20-X)SiO2 + 19BaF2 + 10Li2O + XAg2O, where X = 0–5 mol% glasses were investigated. Samples were prepared using the melt quenching procedure and named AgOX. The MCNP simulation code and EpiXs software (EPX) were applied to achieve the mentioned aims. XRD measurements confirmed the amorphous nature of AgOX samples. The density (Ds) of AgOX enhanced from 2.61 g/cm3 to 2.92 g/ cm3 as AgO content increased from 0.0 to 5.0 mol%. Molar volume (Vm) declined from 35.06 cm3/mol to 34.02 cm3/mol. The packing density (Pd) enhanced from 0.517 to 0.533, while the free volume (Vf) changed from 16.37 cm3/mol for the AgO0 sample to 15.86 cm3/mol for the AgO5 sample. Linear-attenuation (µ) order was AgO0 < AgO1 < AgO2 < AgO3 < AgO5. The AgO5 sample possessed the lowest half (HVL) and tenth (TVL)-value layers as well as mean free path (MFP). Within the investigated energy range of effective atomic number (\({\text{Z}}_{\text{ef}})\) within the range: 44.540 – 15.220, 44.599 – 15.580, 44.653 – 15.929, 44.704 – 16.269, and 44.797 – 16.922 for AgO0, AgO1, AgO2, AgO3, and AgO5 glasses, respectively. The AgO5 sample offers the best γ-ray shielding capability among AgOX glasses.

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硼硅玻璃的 SiO2/Ag2O 替代物:制备、结构、物理特性和γ射线防护能力
本研究调查了 50B2O3 + 1Tb4O7 + (20-X)SiO2 + 19BaF2 + 10Li2O + XAg2O(其中 X = 0-5 mol%)玻璃的性质、物理特性和γ射线防护特征。样品采用熔体淬火程序制备,并命名为 AgOX。为达到上述目的,使用了 MCNP 模拟代码和 EpiXs 软件 (EPX)。XRD 测量证实了 AgOX 样品的无定形性质。随着 AgO 含量从 0.0 摩尔/立方厘米增加到 5.0 摩尔/立方厘米,AgOX 的密度(Ds)从 2.61 克/立方厘米增加到 2.92 克/立方厘米。摩尔体积(Vm)从 35.06 立方厘米/摩尔下降到 34.02 立方厘米/摩尔。堆积密度 (Pd) 从 0.517 增至 0.533,而自由体积 (Vf) 则从 AgO0 样品的 16.37 cm3/mol 变为 AgO5 样品的 15.86 cm3/mol。线性衰减 (µ) 顺序为 AgO0 < AgO1 < AgO2 < AgO3 < AgO5。AgO5 样品具有最低的半值(HVL)和十值(TVL)层以及平均自由路径(MFP)。在所研究的能量范围内,有效原子序数(\({\{Z}}_\{text{ef}})的范围为AgO0、AgO1、AgO2、AgO3 和 AgO5 玻璃的有效原子数分别为 44.540 - 15.220、44.599 - 15.580、44.653 - 15.929、44.704 - 16.269 和 44.797 - 16.922。在 AgOX 玻璃中,AgO5 样品的γ射线屏蔽能力最强。
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来源期刊
Silicon
Silicon CHEMISTRY, PHYSICAL-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
5.90
自引率
20.60%
发文量
685
审稿时长
>12 weeks
期刊介绍: The journal Silicon is intended to serve all those involved in studying the role of silicon as an enabling element in materials science. There are no restrictions on disciplinary boundaries provided the focus is on silicon-based materials or adds significantly to the understanding of such materials. Accordingly, such contributions are welcome in the areas of inorganic and organic chemistry, physics, biology, engineering, nanoscience, environmental science, electronics and optoelectronics, and modeling and theory. Relevant silicon-based materials include, but are not limited to, semiconductors, polymers, composites, ceramics, glasses, coatings, resins, composites, small molecules, and thin films.
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