Silicon最新文献

The current study goals to create of PS-SiC-Al₂O₃ multifunctional nanocomposites films as a promising nanomaterials to exploit in futuristic nanoelectronics and optical fields. By comparing with other nanocomposites films, the PS-SiC-Al₂O₃ films have high absorption for UV-radiation, flexible, low band gap, and inexpensive. The microstructure and optical characteristics of PS-SiC-Al₂O₃ films were investigated. The microstructure and morphological properties included FTIR and OM. The realized results indicated that the values absorbance for PS-SiC-Al₂O₃ films are high at NIR and UV spectrums. These results build the films of PS-SiC-Al₂O₃ are promising for NIR sensing, UV shielding and optoelectronics approaches. The increment ratio of PS absorbance is 30.9% for λ = 320 nm and SiC-Al₂O₃ content is 2.4 wt.%. The PS band gap is 3.8 eV and its reduced to 3.13 eV with increasing SiC-Al₂O₃ NPs content to 2.4 wt.%.. This performance leads to make the PS-SiC-Al₂O₃ films are welcomed in various optoelectronics and photonics fields. The optical factors: extinction coefficient; absorption coefficient; real and imaginary dielectric constants, refractive index; and optical conductivity of PS were enhanced with increasing SiC-Al₂O₃ NPs content; these results of lead to made the PS-SiC-Al₂O₃ films are suitable for optical fields. Finally, the achieved results confirmed that the PS-SiC-Al₂O₃ films could be as a key for promising nanoelectronics and optical fields.

In this study, we studied the compression behavior of tungsten disilicide (WSi₂) to 35.5 GPa using synchrotron radiation X-ray diffraction with silicon oil as the pressure transmission medium in a diamond anvil at room temperature. WSi₂ did not undergo a structural phase transition within the pressure range studied. By fitting the volume data under different pressures, we obtained a bulk modulus of 289(3) GPa for WSi₂. In addition, we studied the bulk modulus, electronic band structure, and density of states of WSi₂ to the highest pressure of 40 GPa using density functional theory based on first-principles. The theoretical calculation shows that the bulk modulus of WSi₂ is 242 GPa. The theoretical calculation results indicate that WSi₂ exhibits both semimetallic and non-magnetic properties throughout the entire pressure range of 0–40 GPa.

This study explores the use of nano SiO₂ as a catalyst in the synthesis of imidazole derivatives, demonstrating its superior catalytic efficiency compared to conventional catalysts. The high surface area of nano SiO₂ significantly enhances reactant interactions, resulting in higher yields of imidazole products. Detailed NMR spectral analysis provided precise characterizations of the imidazole derivatives, revealing well-defined chemical shifts. The influence of solvent polarity on absorption and fluorescence spectra was investigated, showing that polar solvents induce pronounced bathochromic shifts by stabilizing the excited states through hydrogen bonding and dipole interactions. Quantum yield and emission kinetics analyses highlighted the role of non-radiative decay pathways in reducing fluorescence efficiency. Furthermore, DFT calculations of HOMO–LUMO energies elucidated how substituents affect electronic transitions and solvatochromic shifts. These findings underscore the effectiveness of nano SiO₂ as a catalyst, illustrate the impact of solvent interactions on molecular behavior, and provide comprehensive insights into the electronic properties of imidazole derivatives, offering valuable implications for both research and practical applications.

In this work, we present experimental and theoretical analysis of the absorbance of the SiNPs that exhibit an interesting behavior on light manipulation through the downshifting mechanism. Silicon nanoparticles (1 nm <radius < 3 nm) were synthesized using a green chemistry method, and characterized to determine its experimental absorbance region, size, crystallographic structure, and luminescence response. To evaluate the theoretical absorbance performance of SiNPs (radius < 3 nm), Mie’s theory was used to explore different scenarios considering: an isolated single silicon NP, an array of SiNPs with a specific size distribution and Si-SiO2 core-shell NPs. Also, a simple model to analyze the luminescence and their effect using a size distribution on the emission spectra are examined. Finally, the efficiency enhancement of Si solar cells using SiNPs as a downshifting material was explored. The presence of the nanoparticles on the device’s surface was revealed by scanning electron microscopy. The solar cell’s parameters, current-voltage characteristics, power-voltage curves were obtained. A current density of 24.2 mA/cm(^2), open-circuit voltage of 610 mV and a fill factor of 72% and an overall power conversion efficiency of 45% are reported. These results show that the controlled dosing of SiNPs in aqueous solution has a high potential to be applied as an antireflective coating complement to improve the efficiency of large-scale solar cells due to the simplicity of the method, low toxicity and easy distribution over large areas.

This work wants to examine the potential of Fe-Si₇₈, Fe-C₇₈, Fe-B₃₉P₃₉, Fe-doped NT (9, 0) for delivering the Chloroquine as COVID-19 drug by theoretical models. The ΔE_adsorption, ΔH_adsorption and ΔG_adsorption values for adsorption of Chloroquine on surfaces of Fe-Si₇₈, Fe-C₇₈, Fe-B₃₉P₃₉, Fe-doped NT (9, 0) are calculated. The Fe adoption of structures can improve the thermodynamic stability of Si₇₈, C₇₈, B₃₉P₃₉, SiNT (9, 0), CNT (9, 0) and BPNT (9, 0). The ΔG_adsorption of adsorption of Chloroquine on surfaces of Fe-Si₇₈, Fe-C₇₈, Fe-B₃₉P₃₉, Fe-doped NT (9, 0) are -2.94, -3.05, -3.19, -3.65, -3.78 and -3.87 eV, respectively. The Fe-BPNT (9, 0) and Fe-B₃₉P₃₉ have higher τ and q than Fe-Si₇₈, Fe-C₇₈, Fe-doped NT (9, 0). Finally, the Fe-BPNT (9, 0) and Fe-CNT (9, 0) have acceptable potential for delivering the Chloroquine as anti-Coronavirus drug and Fe-BPNT (9, 0) and Fe-CNT (9, 0) can propose as suitable materials for drug delivery.

Recently, there has been a lot of interest in silicon quantum dots (Sil-QDts) because of their special opto-electronic properties. These qualities include broad absorption spectra, strong photo-bleaching stability, and size-tunable photoluminescence, which can range from visible to near-infrared depending on its size. Because of their high biocompatibility, low cytotoxicity, and vast surface modification capacity, these nanoparticles have the potential to be used in a wide range of biological and biomedical applications, including sensing, bio-imaging, and photodynamic therapy. This paper presents a thorough analysis of current developments using Sil-QDts in sensor technology. Various types of sensors that use Sil-QDts are examined in detail, such as metal ion sensors, biosensors, food quality sensors, and pesticide and pollution detectors. This paper also addresses prospective applications and future possibilities of Sil-QDt-based sensors.

Water deficit stress significantly reduces grain yield in bread wheat, requiring improved tolerance in cultivars. Despite recent breeding advancements, enhancing tolerance remains crucial. Plant growth-promoting bacteria (PGPB) and silicon (Si) independently boost drought resistance through different mechanisms, but their combined effects are understudied. This research explored the combined impacts of silicon dioxide nanoparticles (SiO₂ NPs) and native PGPB on wheat's morphophysiological and nutritional responses under water deficit stress. The study tested various SiO₂ NPs concentrations (control, soil application of 100 and 200 mgkg⁻¹, and foliar application of 200 mgkg⁻¹) and PGPB strains (no bacterium, Pseudomonas fluorescens p-187, and Pseudomonas putida p-168). Results showed that SiO₂ NPs significantly improved wheat tolerance to water stress, increasing shoot dry weight by 4.40 g/pot with 100 mgkg⁻¹ SiO₂NPs and Pseudomonas fluorescens p-187 compared to the control, and root dry weight by 1.05 g pot⁻¹ with foliar application of 200 mgkg⁻¹ SiO₂ NPs and Pseudomonas putida p-168. SiO₂ NPs and PGPB also boosted N, P, K, and Si concentrations in wheat shoots, reduced malondialdehyde content, and increased superoxide dismutase and glutathione peroxidase activities. The best performance was achieved with 200 mgkg⁻¹ SiO₂ NPs and Pseudomonas fluorescens p-187. The study confirms that combining SiO₂ NPs sources with PGPB effectively enhances wheat's drought tolerance. This synergistic approach offers an environmentally sustainable strategy to bolster crop resilience against water deficit stress, ensuring better wheat yield in drought-prone conditions.

Utilization of fluoride-containing waste from aluminium fluoride production is an important strategic issue. Here, we use technogenic silica gel containing about 30 wt. % of fluoride and aluminum for zeolite NaA (LTA) synthesis. The process consists of two steps: silica gel acid purification up to a silica content of 95 wt. % and hydrothermal synthesis. X-ray diffraction (XRD), scanning electron microscopy (SEM), and Fourier transform infrared (FTIR) spectroscopy were used for phase identification and synthesis conditions optimization. As a result, we determined that hydrothermal synthesis from aluminosilicate gel with molar ratios SiO₂:Al₂O₃ = 1.8, Na₂O:Al₂O₃ = 4.0, and H₂O:SiO₂ = 50 at 95 °C for 60 min with vigorous stirring yields zeolite NaA with Ca²⁺ and Mg²⁺ ion exchange capacities of 562.6 and 187.5 mEq/100 g respectively and water vapor capacity of 25.8 g/100 g. Thus, the developed process offers waste silica gel utilization and production of zeolite NaA, which is as good as commercial analogs.

Graphical Abstract

Silicon wafers are essential components in the production of various devices, including integrated circuits, microchips, and solar cells. The quality and characteristics of silicon wafers greatly influence the performance and reliability of these devices. Silicon wafers have been produced through processes like the Czochralski method, which involves growing a single crystal ingot of silicon and then slicing it into thin wafers. While effective, these methods have limitations in terms of scalability, cost, and uniformity. Recent advancements in silicon wafer production focus on improving efficiency, reducing costs, and enhancing quality. The innovations in silicon wafer production and finishing have significant implications for various industries, including electronics, telecommunications, automotive, and renewable energy. This article provides an overview of the production of high-purity silicon, a vital component in semiconductor device manufacturing. A comprehensive description related to the extraction of silicon from silica, the refinement of metallurgical grade silicon (MGS) to achieve high purity. Additionally, the article covers various processes involved in silicon wafer manufacturing, including cutting, shaping, polishing, and cleaning, and explores advancements in technology that could enhance wafer manufacturing capabilities.

The multi-crystalline silicon (mc-Si) ingot quality is mainly influenced by the generation of impurities and their diffusion. A transient global simulation helps to study the impurities distribution in the grown mc-Si ingot. In this work, crucible materials such as quartz and carbon are used to grow mc-Si ingots, and the impurities distribution of both silicon ingots are analyzed. Non-metallic impurities such as oxygen, and carbon are the major impurities formed in the silicon crystal during the directional solidification (DS) process. These impurities arise from the parts of the furnace and are segregated partly into the mc-Si ingot. The impurities such as oxygen and carbon were analyzed at the melt-crystal interface as well as in grown mc-Si ingots. Further, the gaseous impurities such as silicon monoxide and carbon monoxide are analyzed in the melt-free surface. The solar cell performance mainly depends on the quality of the silicon ingot. The mc-Si ingot grown by silicon nitride-coated carbon crucible gives better quality for photovoltaic industries.