Effects of Lithium Ion Irradiation on Yttria-Stabilized Zirconia Thin Films: Structural and Optical Investigations

IF 2.5 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-06-15 DOI:10.1007/s11664-024-11230-6
Praveen Gothwal, Fouran Singh, Vishnu Chauhan, Bhawana Joshi
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Abstract

Thin films of yttria-stabilized zirconia (YSZ) were synthesized using spin coating technique on glass substrates with various concentration of yttria. The films were irradiated with Li3+ ions of energy 50 MeV and fluence values of 1 × 1011, 5 × 1012 and 5 × 1013 ions/cm2. The results obtained for the irradiated films are compared with the pristine sample. X-ray diffraction (XRD) was employed to confirm the structural phase and investigate the variation in crystallinity of irradiated thin films. X-ray diffraction analysis confirmed that the higher yttria concentrations corresponded to decrease in crystallinity in the zirconia, corroborated by calculated crystallite sizes. Interestingly, no phase formation was observed in sample YSZ (8%), highlighting the necessity of elevated annealing temperatures for phase formation, particularly at higher yttria concentrations. Significantly, the structural information was validated through Raman spectroscopy which revealed the decrease in the monoclinic phase with increasing yttria doping. The optical band gap of Zirconia increased with higher yttria doping concentration, resulting in a range of band gap from 4.11 eV to 4.15 eV. The exposure of YSZ thin films to Li3+ ions with an energy of 50 MeV unveiled impacts of ion fluence. Lower fluence levels resulted in observable damage to crystallinity when contrasted with pristine YSZ samples, as manifested by the broadening of diffraction peaks. At moderate fluence levels, a decrease in crystallinity damage was noted, nonetheless, at higher fluence levels, the damage intensified once more. The ion irradiation of YSZ (8%) resulted in the emergence and growth of crystalline phases.

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锂离子辐照对钇稳定氧化锆薄膜的影响:结构和光学研究
采用自旋镀膜技术在不同浓度氧化钇的玻璃衬底上合成了氧化钇稳定氧化锆薄膜。用能量为50 MeV、影响值分别为1 × 1011、5 × 1012和5 × 1013离子/cm2的Li3+离子辐照膜。对辐照膜的结果与原始样品进行了比较。采用x射线衍射(XRD)对辐照薄膜的结构物相进行了确定,并对其结晶度的变化进行了研究。x射线衍射分析证实,较高的氧化钇浓度对应于氧化锆结晶度的降低,计算出的晶体尺寸也证实了这一点。有趣的是,在样品YSZ(8%)中没有观察到相形成,这突出了提高退火温度以形成相的必要性,特别是在较高的钇浓度下。重要的是,通过拉曼光谱验证了结构信息,表明单斜相随着钇掺杂的增加而减少。氧化锆的光学带隙随着氧化钇掺杂浓度的增加而增大,带隙范围在4.11 ~ 4.15 eV之间。YSZ薄膜暴露于能量为50 MeV的Li3+离子下,揭示了离子影响的影响。与原始的YSZ样品相比,较低的通量水平对结晶度造成了明显的破坏,这表现在衍射峰的展宽上。在中等影响水平下,结晶度损害有所减少,然而,在较高影响水平下,损害再次加剧。YSZ(8%)的离子辐照导致了结晶相的出现和生长。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Electronic Materials
Journal of Electronic Materials 工程技术-材料科学:综合
CiteScore
4.10
自引率
4.80%
发文量
693
审稿时长
3.8 months
期刊介绍: The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.
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