Sodium Filling in Superadamantoide Na1.36(Si0.86Ga0.14)2As2.98 and the Mixed Valent Arsenidosilicate-Silicide Li1.5Ga0.9Si3.1As4

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-06-14 DOI:10.3390/inorganics12060166
Marlo Schöneich, Lucas G. Balzat, Bettina V. Lotsch, Dirk Johrendt
{"title":"Sodium Filling in Superadamantoide Na1.36(Si0.86Ga0.14)2As2.98 and the Mixed Valent Arsenidosilicate-Silicide Li1.5Ga0.9Si3.1As4","authors":"Marlo Schöneich, Lucas G. Balzat, Bettina V. Lotsch, Dirk Johrendt","doi":"10.3390/inorganics12060166","DOIUrl":null,"url":null,"abstract":"Na1.36(Si0.86Ga0.14)2As2.98 and Li1.5Ga0.9Si3.1As4 were synthesized by heating mixtures of the elements at 950 °C. The crystal structures were determined by single crystal X-ray diffraction (Na1.36(Si0.86Ga0.14)2As2.98: I41/a, Z = 100, a = 19.8772(4) Å, c = 37.652(1) Å; Li1.5Ga0.9Si3.1As4: C2/c, Z = 8, a = 10.8838(6) Å, b = 10.8821(6) Å, c = 13.1591(7) Å). Na1.36(Si0.86Ga0.14)2As2.98 crystallizes similar to NaSi2P3 with interpenetrating networks of vertex-sharing T4 and T5 supertetrahedra. Gallium substitution at the silicon sites increases the charge of the cluster network, which is compensated for by a 36% higher sodium content. Since in contrast to NaSi2P3, all sodium sites are now fully occupied, there is no significant ion mobility, as indicated by 23Na-NMR. Consequently, the total sodium-ion conductivity of Na1.36(Si0.86Ga0.14)2As2.98 amounts to only 1.6(1) × 10−7 S cm−1 and is therefore three orders of magnitude lower than in NaSi2P3. Li1.5Ga0.9Si3.1As4 crystallizes in a new structure type with layers of edge-sharing (Si1−xGax)As4 tetrahedra alternating with layers that contain infinite Sin zigzag chains. Lithium ions reside in channels between the chains, and thus, the structure does not provide three dimensional pathways for ion conduction and the measured total Li-ion conductivity amounts to only 1.3(1) × 10−7 S cm−1.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"38 36","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.3390/inorganics12060166","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Na1.36(Si0.86Ga0.14)2As2.98 and Li1.5Ga0.9Si3.1As4 were synthesized by heating mixtures of the elements at 950 °C. The crystal structures were determined by single crystal X-ray diffraction (Na1.36(Si0.86Ga0.14)2As2.98: I41/a, Z = 100, a = 19.8772(4) Å, c = 37.652(1) Å; Li1.5Ga0.9Si3.1As4: C2/c, Z = 8, a = 10.8838(6) Å, b = 10.8821(6) Å, c = 13.1591(7) Å). Na1.36(Si0.86Ga0.14)2As2.98 crystallizes similar to NaSi2P3 with interpenetrating networks of vertex-sharing T4 and T5 supertetrahedra. Gallium substitution at the silicon sites increases the charge of the cluster network, which is compensated for by a 36% higher sodium content. Since in contrast to NaSi2P3, all sodium sites are now fully occupied, there is no significant ion mobility, as indicated by 23Na-NMR. Consequently, the total sodium-ion conductivity of Na1.36(Si0.86Ga0.14)2As2.98 amounts to only 1.6(1) × 10−7 S cm−1 and is therefore three orders of magnitude lower than in NaSi2P3. Li1.5Ga0.9Si3.1As4 crystallizes in a new structure type with layers of edge-sharing (Si1−xGax)As4 tetrahedra alternating with layers that contain infinite Sin zigzag chains. Lithium ions reside in channels between the chains, and thus, the structure does not provide three dimensional pathways for ion conduction and the measured total Li-ion conductivity amounts to only 1.3(1) × 10−7 S cm−1.
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超金刚石 Na1.36(Si0.86Ga0.14)2As2.98和混合价砷硅酸盐-硅化物 Li1.5Ga0.9Si3.1As4 中的钠填充
Na1.36(Si0.86Ga0.14)2As2.98 和 Li1.5Ga0.9Si3.1As4 是通过在 950 °C 下加热元素混合物合成的。通过单晶 X 射线衍射确定了晶体结构(Na1.36(Si0.86Ga0.14)2As2.98:I41/a,Z = 100,a = 19.8772(4)埃,c = 37.652(1)埃;Li1.5Ga0.9Si3.1As4:C2/c,Z = 8,a = 19.8772(4)埃,c = 37.652(1)埃:C2/c,Z = 8,a = 10.8838(6)埃,b = 10.8821(6)埃,c = 13.1591(7)埃)。Na1.36(Si0.86Ga0.14)2As2.98 的结晶与 NaSi2P3 相似,具有顶点共享的 T4 和 T5 超四面体互穿网络。硅位点上的镓替代物增加了簇网络的电荷,而钠含量增加 36% 则弥补了这一不足。与 NaSi2P3 不同的是,现在所有的钠位点都被完全占据,因此 23Na-NMR 显示没有明显的离子移动性。因此,Na1.36(Si0.86Ga0.14)2As2.98 的钠离子总电导率仅为 1.6(1) × 10-7 S cm-1,比 NaSi2P3 低三个数量级。Li1.5Ga0.9Si3.1As4 以一种新的结构类型结晶,其边缘共享 (Si1-xGax)As4 四面体层与包含无限 Sin 之字链的层交替出现。锂离子驻留在链之间的通道中,因此,这种结构无法提供离子传导的三维路径,测得的锂离子总电导率仅为 1.3(1) × 10-7 S cm-1。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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