Unveiling potential neutron halos in intermediate-mass nuclei: An ab initio study

IF 4.7 3区 材料科学 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC ACS Applied Electronic Materials Pub Date : 2024-06-12 DOI:10.1103/physrevc.109.l061304
H. H. Li, J. G. Li, M. Xie, W. Zuo
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Abstract

Halos epitomize the fascinating interplay between weak binding, shell evolution, and deformation effects, especially in nuclei near the drip line. In this Letter, we apply the state-of-the-art \textit{ab initio} valence-space in-medium similarity renormalization group approach to predict potential candidates for one- and two-neutron halo in the intermediate-mass region. Notably, we use spectroscopic factors (SF) and two-nucleon amplitudes (TNA) as criteria for suggesting one- and two-neutron halo candidates, respectively. This approach is not only theoretically sound but also amenable to experimental validation. Our research focuses on Mg, Al, Si, P, and S neutron-drip-line nuclei, offering systematic predictions of neutron halo candidates in terms of separation energies, SF (TNA), and average occupation. The calculation suggests the ground states of $^{40,42,44,46}$Al, $^{41,43,45,47}$Si, $^{46,48}$P, and $^{47,49}$S are promising candidates for one-neutron halos, while $^{40,42,44,46}$Mg, $^{45,47}$Al, $^{46,48}$Si, $^{49}$P, and $^{50}$S may harbor two-neutron halos. In addition, the relative mean-square neutron radius between halo nuclei and \textit{inner core} is calculated for suggested potential neutron halos. Finally, the relations of halo formations and shell evolution are discussed.
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揭示中等质量原子核中的潜在中子晕:一项 ab initio 研究
晕是弱结合、壳演化和形变效应之间迷人的相互作用的缩影,尤其是在滴水线附近的原子核中。在这封信中,我们应用最先进的价空间中子相似性重正化群方法来预测中等质量区域一中子和二中子晕的潜在候选者。值得注意的是,我们将光谱因子(SF)和双核振幅(TNA)分别作为推荐一中子晕和双中子晕候选体的标准。这种方法不仅在理论上站得住脚,而且可以进行实验验证。我们的研究侧重于镁、铝、硅、钾和硒中子滴线核,从分离能、SF(TNA)和平均占据等方面系统地预测了中子晕候选体。计算表明,$^{40,42,44,46}$Al、$^{41,43,45,47}$Si、$^{46,48}$P 和 $^{47、49}$S有希望成为一中子晕的候选者,而$^{40,42,44,46}$Mg、$^{45,47}$Al、$^{46,48}$Si、$^{49}$P和$^{50}$S则可能蕴藏着二中子晕。此外,还计算了建议的潜在中子晕核与内核之间的相对均方中子半径。最后,讨论了晕的形成与壳演化的关系。
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来源期刊
CiteScore
7.20
自引率
4.30%
发文量
567
期刊介绍: ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric. Indexed/​Abstracted: Web of Science SCIE Scopus CAS INSPEC Portico
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