{"title":"Unveiling potential neutron halos in intermediate-mass nuclei: An \nab initio\n study","authors":"H. H. Li, J. G. Li, M. Xie, W. Zuo","doi":"10.1103/physrevc.109.l061304","DOIUrl":null,"url":null,"abstract":"Halos epitomize the fascinating interplay between weak binding, shell evolution, and deformation effects, especially in nuclei near the drip line. In this Letter, we apply the state-of-the-art \\textit{ab initio} valence-space in-medium similarity renormalization group approach to predict potential candidates for one- and two-neutron halo in the intermediate-mass region. Notably, we use spectroscopic factors (SF) and two-nucleon amplitudes (TNA) as criteria for suggesting one- and two-neutron halo candidates, respectively. This approach is not only theoretically sound but also amenable to experimental validation. Our research focuses on Mg, Al, Si, P, and S neutron-drip-line nuclei, offering systematic predictions of neutron halo candidates in terms of separation energies, SF (TNA), and average occupation. The calculation suggests the ground states of $^{40,42,44,46}$Al, $^{41,43,45,47}$Si, $^{46,48}$P, and $^{47,49}$S are promising candidates for one-neutron halos, while $^{40,42,44,46}$Mg, $^{45,47}$Al, $^{46,48}$Si, $^{49}$P, and $^{50}$S may harbor two-neutron halos. In addition, the relative mean-square neutron radius between halo nuclei and \\textit{inner core} is calculated for suggested potential neutron halos. Finally, the relations of halo formations and shell evolution are discussed.","PeriodicalId":3,"journal":{"name":"ACS Applied Electronic Materials","volume":"32 15","pages":""},"PeriodicalIF":4.7000,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Electronic Materials","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1103/physrevc.109.l061304","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
Halos epitomize the fascinating interplay between weak binding, shell evolution, and deformation effects, especially in nuclei near the drip line. In this Letter, we apply the state-of-the-art \textit{ab initio} valence-space in-medium similarity renormalization group approach to predict potential candidates for one- and two-neutron halo in the intermediate-mass region. Notably, we use spectroscopic factors (SF) and two-nucleon amplitudes (TNA) as criteria for suggesting one- and two-neutron halo candidates, respectively. This approach is not only theoretically sound but also amenable to experimental validation. Our research focuses on Mg, Al, Si, P, and S neutron-drip-line nuclei, offering systematic predictions of neutron halo candidates in terms of separation energies, SF (TNA), and average occupation. The calculation suggests the ground states of $^{40,42,44,46}$Al, $^{41,43,45,47}$Si, $^{46,48}$P, and $^{47,49}$S are promising candidates for one-neutron halos, while $^{40,42,44,46}$Mg, $^{45,47}$Al, $^{46,48}$Si, $^{49}$P, and $^{50}$S may harbor two-neutron halos. In addition, the relative mean-square neutron radius between halo nuclei and \textit{inner core} is calculated for suggested potential neutron halos. Finally, the relations of halo formations and shell evolution are discussed.
期刊介绍:
ACS Applied Electronic Materials is an interdisciplinary journal publishing original research covering all aspects of electronic materials. The journal is devoted to reports of new and original experimental and theoretical research of an applied nature that integrate knowledge in the areas of materials science, engineering, optics, physics, and chemistry into important applications of electronic materials. Sample research topics that span the journal's scope are inorganic, organic, ionic and polymeric materials with properties that include conducting, semiconducting, superconducting, insulating, dielectric, magnetic, optoelectronic, piezoelectric, ferroelectric and thermoelectric.
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