Investigating Viability of Split-Stepped Gate Field Plate Design on Ga2O3 MOSFET for High Power Applications

IF 2.5 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Electronic Materials Pub Date : 2024-06-08 DOI:10.1007/s11664-024-11225-3

Priyanshi Goyal, Harsupreet Kaur

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Abstract

A split-stepped gate field plate design has been incorporated on a gallium oxide (Ga₂O₃) metal-oxide semiconductor field-effect transistor (MOSFET). The aim of the present work is to unfold the potential of Ga₂O₃ MOSFET by enhancing its breakdown limits and also to overcome the challenge of simultaneous improvement in power as well as radio frequency (RF) metrics. An extensive simulation study focusing on analog and RF metrics has been carried out using technology computer-aided design simulations of the proposed device in a calibrated environment, and a comparative analysis of split stepped gate field plate design, shorted stepped gate field plate design, and conventional Ga₂O₃ MOSFET design has also been performed. The results highlight the superiority of the proposed device, and a substantial enhancement in breakdown voltage (i.e., 106.36% relative increase) and power figure-of-merit (i.e., 282.70% relative increase) has been demonstrated.

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研究用于大功率应用的 Ga2O3 MOSFET 分层栅极场板设计的可行性

在氧化镓（Ga2O3）金属氧化物半导体场效应晶体管（MOSFET）上采用了分阶栅场极板设计。本工作的目的是通过提高其击穿极限来展现Ga2O3 MOSFET的潜力，并克服同时提高功率和射频（RF）指标的挑战。利用计算机辅助设计技术在校准环境中对所提出的器件进行了广泛的模拟研究，重点是模拟和射频指标，并对分阶栅场极板设计、短阶栅场极板设计和传统Ga2O3 MOSFET设计进行了比较分析。结果显示了该器件的优越性，击穿电压（即相对提高106.36%）和功率优值（即相对提高282.70%）均有显著提高。

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来源期刊

Journal of Electronic Materials 工程技术-材料科学：综合

CiteScore

4.10

自引率

4.80%

发文量

693

审稿时长

3.8 months

期刊介绍： The Journal of Electronic Materials (JEM) reports monthly on the science and technology of electronic materials, while examining new applications for semiconductors, magnetic alloys, dielectrics, nanoscale materials, and photonic materials. The journal welcomes articles on methods for preparing and evaluating the chemical, physical, electronic, and optical properties of these materials. Specific areas of interest are materials for state-of-the-art transistors, nanotechnology, electronic packaging, detectors, emitters, metallization, superconductivity, and energy applications. Review papers on current topics enable individuals in the field of electronics to keep abreast of activities in areas peripheral to their own. JEM also selects papers from conferences such as the Electronic Materials Conference, the U.S. Workshop on the Physics and Chemistry of II-VI Materials, and the International Conference on Thermoelectrics. It benefits both specialists and non-specialists in the electronic materials field. A journal of The Minerals, Metals & Materials Society.